Abstract: An inclined surface having an inclination angle ? is formed in an edge portion which forms an opening portion of an inter-layer insulating film, thereby reducing a stress by the inclined surface.

Abstract: A semiconductor composite apparatus includes a substrate and a planarizing layer, and a semiconductor thin film. The planarizing layer is formed on the substrate either directly or indirectly. The planarizing layer includes a first surface that faces the substrate, and a second surface that is on the side of the planarizing layer remote from the substrate. The semiconductor thin film formed on the planarizing layer. The second surface has a roughness of not more than 5 nm.

Abstract: A semiconductor composite apparatus includes a substrate and a planarizing layer, and a semiconductor thin film. The planarizing layer is formed on the substrate either directly or indirectly. The planarizing layer includes a first surface that faces the substrate, and a second surface that is on the side of the planarizing layer remote from the substrate. The semiconductor thin film formed on the planarizing layer. The second surface has a roughness of not more than 5 nm.

Abstract: A high-definition, high-intensity display apparatus having a plurality of semiconductor thin film light emitting elements and a plurality of linear electrodes connecting a power source to the light emitting elements, the linear electrodes being disposed so as to minimize the voltage drop across the linear electrodes.

Abstract: An image display apparatus displaying an image by selectively emitting light from a plurality of semiconductor light emitting elements being regularly arranged, includes a substrate; a first conductive wiring layer being formed on the substrate and supplying a first electric potential; a second conductive wiring layer supplying a second electric potential; the plurality of semiconductor light emitting elements each including a first electrode layer being electrically connected to the first conductive wiring layer and a second electrode layer being electrically connected to the second conductive wiring layer; and a plurality of raised parts being disposed on the substrate, each of the raised parts having an upper surface which is higher than an upper surface of the first conductive wiring layer; wherein the plurality of semiconductor light emitting elements is fixed on the plurality of raised parts respectively.

Abstract: A layered semiconductor light emitting device includes a plurality of semiconductor light emitting elements each of which includes a light emitting region that converts electricity into light and emits the light. The semiconductor light emitting elements are layered in a layering direction perpendicular to the light emitting regions, and are bonded to each other via a planarizing layer having electrical insulation property. The planarizing layer includes a first planarizing region disposed above or below the light emitting regions of the semiconductor light emitting elements in the layering direction and formed of a first planarizing film having higher refractive index than air, and a second planarizing region other than the first planarizing region and formed of a second planarizing film having lower refractive index than the first planarizing film. In the layering direction, the upper semiconductor light emitting element transmits light emitted by the lower semiconductor light emitting element.

Abstract: An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.

Abstract: Provided is a technique of effectively extracting the beams of light excited in an LED light emitter other than the light beams emitted from a light-emitting region in the direction of a light-extraction surface. A pit with a tapered sidewall is formed in a substrate. A thin-film semiconductor element is attached to the pit. Light beams emitted from a side surface of the thin-film semiconductor element are reflected by the sidewall of the thin-film semiconductor element. Achieved thereby is effective extraction of light beams other than the light beams emitted from the light-emitting region in the direction of the light-extraction surface.

Abstract: A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably.

Abstract: A light emitting panel includes a plurality of light emitting element arrays each of which has a plurality of light emitting elements arranged in a plane. The light emitting element arrays are configured so that an arrangement plane of the light emitting elements of one light emitting element array is overlapped with another arrangement plane of the light emitting elements of another light emitting element array in substantially parallel to each other, and so that the light emitting elements of one light emitting element array and the light emitting elements of another light emitting element array emit lights to the same side.

Abstract: A semiconductor device is supplied which is able to efficiently liberate heat produced by semiconductor element toward external, prevent temperature rise, improve operation characteristic and maintain stable operation. The semiconductor device comprises a substrate and a semiconductor thin film layer which is accumulated on the substrate and contains semiconductor element, the substrate is a metal substrate, between the metal substrate and the semiconductor thin film layer, a diamond-like carbon layer with high heat conductivity and good insulativity is furnished as a surface coating layer.

Abstract: A nitride semiconductor wafer includes a substrate; a nitride compound semiconductor layer formed on the substrate; and an AlxGa1-xAs layer (x?0.6) formed between the substrate and the nitride semiconductor layer. The nitride compound semiconductor layer is formed of a nitride compound in a group III to a group V.

Abstract: The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus, inner surface electrode integrated with vertical wiring between plastic substrate and thin film LED 102 is accumulated, the inner surface electrode acts as a heat release layer for releasing heat produced inside the thin film LED 102.

Abstract: A semiconductor device includes a substrate, conductive layer, semiconductor thin films, and individual electrodes. The conductive layer is formed on the substrate and serves as a common electrode. The thin films are bonded on the conductive layer. Each of the plurality of semiconductor thin films includes at least one active region and a contact layer that is in electrical contact with the conductive layer. Each of the individual electrodes is formed on a surface of a corresponding one of the semiconductor thin films in electrical contact with the active region. The thin film may be a single thin film that includes a plurality of active regions formed therein, in which case a different common electrode may be used instead of the common electrode which is in contact with the surface and is electrically isolated from the individual electrodes.

Abstract: A semiconductor device includes a substrate; a first conductive type semiconductor layer disposed on a main surface of the substrate; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; a plurality of light emitting elements; and a second conductive side wiring pattern for commonly connecting the second conductive type semiconductor layer in the light emitting elements arranged adjacently. The second conductive type semiconductor layer includes a first conductive type semiconductor connection surface and a second conductive type semiconductor connection surface between the first conductive type semiconductor layer.

Abstract: A semiconductor device is manufactured using dicing of a semiconductor wafer. The semiconductor device includes a substrate, a base insulating layer formed on the substrate, a semiconductor element formed on the base insulating layer, and a separate pattern portion formed on an end portion of the substrate separately from the base insulating layer. The separate pattern portion prevents the base insulating layer from being peeled off from the substrate when the dicing is performed.

Abstract: An inclined surface having an inclination angle ? is formed in an edge portion which forms an opening portion of an inter-layer insulating film, thereby reducing a stress by the inclined surface.

Abstract: A composite semiconductor device includes a semiconductor thin film, a substrate, connection pads, and a light blocking layer. The semiconductor thin film includes light emitting elements. The driver circuits are formed on the substrate and the semiconductor thin film is fixed on the substrate, the driver circuit driving the light emitting element. The connection pads are formed on the substrate, electrical connection being made through which the connection pads. The light blocking layer is formed in an area between the light emitting element and the connection pad, the light blocking layer. The light blocking layer prevents light emitted from the light emitting element from reaching wires connected to the connection pad.

Abstract: A composite semiconductor device includes a substrate, a plurality of circuits, a semiconductor thin film layer, and a dummy pattern. The circuits are formed on the substrate, and include one or more wiring layers. The semiconductor thin film layer includes semiconductor elements and is disposed on an uppermost surface of the one or more layers. A dummy pattern is formed in an area where the one or more wiring layers are absent. A spin-coated layer is formed between the semiconductor thin film layer and the wiring layers. The spin-coated layer may be formed of an organic material or an oxide material.

Abstract: A semiconductor device includes a light-emitting layer of a first conductivity type, a second conductivity type or non-doped type, a first contact layer of the second conductivity type disposed on the light-emitting layer and supplied with a voltage via a predetermined contact, a second contact layer of the second conductivity type disposed below the light-emitting layer and supplied with a voltage via a predetermined contact, a first etching stopper layer of the first or second conductivity type disposed below the light-emitting layer and above the second contact layer, and a third contact layer of the first conductivity type disposed below the second contact layer and supplied with a voltage via a predetermined contact.