Abstract: There is provided a technique that includes: (a) forming an intermediate layer containing carbon on a first film formed on a substrate; and (b) forming a second film containing nitrogen on the intermediate layer by using an activated nitrogen-containing gas, wherein in (a), the intermediate layer is formed such that a carbon content per unit area in the intermediate layer differs between a central region and an outer region in a substrate plane of the substrate.

Abstract: A technique including: a process container accommodating a substrate; a first nozzle including a side surface with a first discharge opening directed toward a substrate arrangement region where the substrate is arranged in the process container; a second nozzle including a side surface with a second discharge opening opened to be directed toward at least one of a portion of the side surface of the first nozzle in a range different from a range where the first discharge opening is formed and a space between the portion and an inner wall surface of the process container; a source gas supply system that supplies a source gas into the process container via the first nozzle; and an inert gas supply system that supplies an inert gas into the process container via the second nozzle.

Abstract: Provided is a method of processing a substrate including: forming a film on the substrate by performing a cycle, multiple times, including non-simultaneously performing: (a) supplying a precursor gas and inert gas to the substrate; and (b) supplying a reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration or amount of the precursor gas differs between the first and second tank. Further, in (a), the process chamber is filled with the inert gas before the precursor gas and the inert gas are supplied to the substrate.

Abstract: There is provided a technique that includes: forming a film containing an element and nitrogen on a substrate by performing a cycle including: (a) forming a first layer by supplying a source gas containing the element and a halogen element to the substrate; (b) generating a first active species by plasma-exciting and supplying an elemental gas containing the first active species to the substrate; and (c) forming a second layer by generating a second active species by plasma-exciting a reactive gas containing nitrogen and supplying the reactive gas containing the second active species to the substrate, wherein (b) includes generating a third active species by plasma-exciting and supplying a compound gas containing the third active species to the substrate, and a ratio of a supply amount of the compound gas to that of the elemental gas is set to be lower than ½ in (b).

Abstract: There is included (a) loading a substrate into a process container; (b) performing a process of forming a film on the substrate in the process container by alternately or simultaneously performing, a predetermined number of times, supplying a precursor gas from a first supplier to the substrate, and supplying a reaction gas from a second supplier to the substrate; (c) unloading the processed substrate from an interior of the process container; and (d) oxidizing at least one part of a film formed inside the process container in (b) so as to change the at least one part into an oxide film in a state in which the processed substrate is unloaded from the interior of the process container, wherein in (d), an oxygen-containing gas and a hydrogen-containing gas are supplied into the process container and at that time, the hydrogen-containing gas is supplied toward the first supplier.

Abstract: Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.

Abstract: There is provided a technique that includes: performing a set a plurality of times, the set including: (a) loading at least one substrate into a process container; (b) performing a process of forming a nitride film on the at least one substrate by supplying a film-forming gas to the at least one substrate supported by a support in the process container; (c) unloading the processed at least one substrate from an interior of the process container; and (d) supplying an oxidizing gas into the process container from which the processed at least one substrate has been unloaded so as to oxidize one part of the nitride film formed inside the process container in (b) into an oxide film and maintain another part of the nitride film, which is different from the one part of the nitride film, as it is without oxidizing the another part.

Abstract: Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.

Abstract: Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.

Abstract: There is provided a technique that includes: (a) supplying a first gas containing a predetermined element to the substrate; (b) supplying a second gas containing carbon and nitrogen to the substrate; (c) supplying a nitrogen-containing gas activated by plasma to the substrate; (d) supplying an oxygen-containing gas to the substrate; and (e) forming a film containing at least the predetermined element, oxygen, carbon, and nitrogen on the substrate by: performing a cycle a first number of times of two or more, the cycle performing (a) to (d); or performing a cycle once or more, the cycle performing (a) to (d) in this order.

Abstract: Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.

Abstract: There is provided technique including: forming film on substrate by performing cycle, predetermined number of times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate, wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in first tank is supplied to the substrate, and at least one selected from the group of the precursor gas and the inert gas stored in second tank is supplied to the substrate, and concentration of the precursor gas in the first tank while at least one selected from the group of the precursor gas and the inert gas is stored in the first tank differs from that in the second tank while at least one selected from the group of the precursor gas and the inert gas is stored in the second tank.

Abstract: There is provided a technique that includes a process chamber configured to process a substrate; a gas supplier configured to supply a gas into the process chamber; a first plasma electrode unit including a first reference electrode applied with a reference potential and at least one selected from the group of a first application electrode and a second application electrode applied with high-frequency power, the first plasma electrode unit configured to plasma-excite the gas; and a second plasma electrode unit including a second reference electrode applied with a reference potential and a third application electrode applied with high-frequency power, the third application electrode having a length different from a length of the first application electrode or the second application electrode, and the second plasma electrode unit configured to plasma-excite the gas.

Abstract: There is included (a) loading a substrate into a process container; (b) performing a process of forming a film on the substrate in the process container by alternately or simultaneously performing, a predetermined number of times, supplying a precursor gas from a first supplier to the substrate, and supplying a reaction gas from a second supplier to the substrate; (c) unloading the processed substrate from an interior of the process container; and (d) oxidizing at least one part of a film formed inside the process container in (b) so as to change the at least one part into an oxide film in a state in which the processed substrate is unloaded from the interior of the process container, wherein in (d), an oxygen-containing gas and a hydrogen-containing gas are supplied into the process container and at that time, the hydrogen-containing gas is supplied toward the first supplier.

Abstract: There is provided a technique that includes: performing a set a plurality of times, the set including: (a) loading at least one substrate into a process container; (b) performing a process of forming a nitride film on the at least one substrate by supplying a film-forming gas to the at least one substrate supported by a support in the process container; (c) unloading the processed at least one substrate from an interior of the process container; and (d) supplying an oxidizing gas into the process container from which the processed at least one substrate has been unloaded so as to oxidize one part of the nitride film formed inside the process container in (b) into an oxide film and maintain another part of the nitride film, which is different from the one part of the nitride film, as it is without oxidizing the another part.

Abstract: There is provided technique including: forming film on substrate by performing cycle, predetermined number of times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate, wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in first tank is supplied to the substrate, and at least one selected from the group of the precursor gas and the inert gas stored in second tank is supplied to the substrate, and concentration of the precursor gas in the first tank while at least one selected from the group of the precursor gas and the inert gas is stored in the first tank differs from that in the second tank while at least one selected from the group of the precursor gas and the inert gas is stored in the second tank