Abstract: At least one image pickup apparatus includes a plurality of pixels each including a photoelectric conversion unit, a charge storage unit, and an amplification unit. The charge storage unit includes a first charge storage unit, a second charge storage unit, and a third charge storage unit. In a first period from a first time to a second time, charges generated by the photoelectric conversion unit in the first period are transferred to the first charge storage unit and charges stored in the second charge storage unit and the third charge storage unit in a period preceding the first period are transferred to an input node of the amplification unit. In a second period from the second time to a third time, charges generated by the photoelectric conversion unit in the second period are transferred to the first charge storage unit and the third charge storage unit for storage.

Abstract: A photoelectric conversion apparatus includes a first unit pixel including a first transfer transistor configured to transfer electric charges from a photoelectric conversion unit to an impurity diffusion region and a second unit pixel including a second transfer transistor configured to transfer electric charges from a photoelectric conversion unit to an impurity diffusion region, and a potential at a channel of the first transfer transistor when the first transfer transistor is on-state is higher than a potential at a channel of the second transfer transistor when the second transfer transistor is on-state.

Abstract: Provided is a photoelectric conversion apparatus, including: a plurality of pixels, each of the plurality of pixels including: a photoelectric conversion unit; a charge transfer unit; and an amplification unit; a reference voltage generation unit; a comparison unit configured to output a comparison result by comparing an output voltage from the amplification unit and a reference voltage output from the reference voltage generation unit; and a control unit configured to control a timing to end the accumulation of the charges in the photoelectric conversion unit based on the comparison result, in which the reference voltage to be compared with the output voltage based on the charges transferred from the photoelectric conversion unit to the charge accumulation unit when the charge transfer unit is in a non-conductive state, is a voltage corresponding to charges accumulated in the charge accumulation unit due to a dark current.

Abstract: A photoelectric conversion apparatus is a photoelectric conversion apparatus formed in a semiconductor substrate, and includes: a first photoelectric conversion unit (31) formed as a first conductivity type; a second photoelectric conversion unit (32) formed as a second conductivity type at a position deeper, in a depth direction of the semiconductor substrate, rather than the first photoelectric conversion unit; and a monitor unit configured to monitor a signal of the second photoelectric conversion unit, during a charge accumulation period of the first photoelectric conversion unit.

Abstract: At least one image pickup apparatus includes a plurality of pixels each including a photoelectric conversion unit, a charge storage unit, and an amplification unit. The charge storage unit includes a first charge storage unit, a second charge storage unit, and a third charge storage unit. In a first period from a first time to a second time, charges generated by the photoelectric conversion unit in the first period are transferred to the first charge storage unit and charges stored in the second charge storage unit and the third charge storage unit in a period preceding the first period are transferred to an input node of the amplification unit. In a second period from the second time to a third time, charges generated by the photoelectric conversion unit in the second period are transferred to the first charge storage unit and the third charge storage unit for storage.

Abstract: A photoelectric conversion apparatus includes a first unit pixel including a first transfer transistor configured to transfer electric charges from a photoelectric conversion unit to an impurity diffusion region and a second unit pixel including a second transfer transistor configured to transfer electric charges from a photoelectric conversion unit to an impurity diffusion region, and a potential at a channel of the first transfer transistor when the first transfer transistor is on-state is higher than a potential at a channel of the second transfer transistor when the second transfer transistor is on-state.

Abstract: A photoelectric conversion apparatus is a photoelectric conversion apparatus formed in a semiconductor substrate, and includes: a first photoelectric conversion unit (31) formed as a first conductivity type; a second photoelectric conversion unit (32) formed as a second conductivity type at a position deeper, in a depth direction of the semiconductor substrate, rather than the first photoelectric conversion unit; and a monitor unit configured to monitor a signal of the second photoelectric conversion unit, during a charge accumulation period of the first photoelectric conversion unit.