Abstract: A method for manipulating a flake-like material, the method comprising: (2) a step of grounding a first probe of which a tip is covered with a first resin film on the flake-like material left still on a substrate, and pressing the first probe to pick up the flake-like material; (3) a step of grounding a second probe of which a tip is covered with a second resin film on a surface on an opposite side to the first probe of the flake-like material picked up by the first probe in the step (2), and pressing the second probe; and (4) a step of transferring the flake-like material picked up by the first probe to the second probe by separating the first probe and the second probe, wherein (i) a thickness ratio (thickness B/thickness A) of a thickness B of the second resin film to a thickness A of the first resin film when pressing is not performed is less than 1.

Abstract: A method for manipulating a flake-like material, the method comprising: (2) a step of grounding a first probe of which a tip is covered with a first resin film on the flake-like material left still on a substrate, and pressing the first probe to pick up the flake-like material; (3) a step of grounding a second probe of which a tip is covered with a second resin film on a surface on an opposite side to the first probe of the flake-like material picked up by the first probe in the step (2), and pressing the second probe; and (4) a step of transferring the flake-like material picked up by the first probe to the second probe by separating the first probe and the second probe, wherein (i) a thickness ratio (thickness B/thickness A) of a thickness B of the second resin film to a thickness A of the first resin film when pressing is not performed is less than 1.

Abstract: A voltage is applied across gate electrodes (103A) and (103B) in a two-dimensional electronic system (101) placed under a magnetic field, and the polarity of an electric current passed between ohmic electrodes (102D) and (102S) is selected to bring about inversion of electron spins based on a non-equilibrium distribution of electrons in a quantum Hall edge state and to initialize the polarization of nuclear spins. An oscillatory electric field of a nuclear magnetic resonance frequency is applied to coplanar waveguides (104A) and (104B) to control the nuclear spin polarization. The controlled spin polarization is read out by measuring the Hall resistance from ohmic electrodes (102VA) and (102VB).

Abstract: A voltage is applied across gate electrodes (103A) and (103B) in a two-dimensional electronic system (101) placed under a magnetic field, and the polarity of an electric current passed between ohmic electrodes (102D) and (102S) is selected to bring about inversion of electron spins based on a non-equilibrium distribution of electrons in a quantum Hall edge state and to initialize the polarization of nuclear spins. An oscillatory electric field of a nuclear magnetic resonance frequency is applied to coplanar waveguides (104A) and (104B) to control the nuclear spin polarization. The controlled spin polarization is read out by measuring the Hall resistance from ohmic electrodes (102VA) and (102VB).