Abstract: A sensor element includes an element body and a porous protective layer arranged to cover a part of a surface of the element body. The protective layer includes an inlet protective layer arranged to cover a gas inlet formed in the surface of the element body, and at least a part of a face included in the surface of the element body, the face on which the gas inlet is opens, and an arithmetic average roughness Rap of an inner peripheral surface of an internal space of the inlet protective layer satisfies at least one of conditions below: the arithmetic average roughness Rap is 8 ?m or more, and the arithmetic average roughness Rap is higher than an arithmetic average roughness Rac of a bonding surface of the protective layer, the bonding surface at which the protective layer is bonded to the element body.

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on its upper surface; and a porous plug that is disposed in a plug insertion hole penetrating the ceramic plate in a up-down direction, and allows a gas to flow, wherein the porous plug has a first porous member exposed to the wafer placement surface, and a second porous member having an upper surface covered by the first porous member, the first porous member is higher in purity and smaller in thickness than the second porous member, and the second porous member is higher in porosity than the first porous member.

Abstract: A member for semiconductor manufacturing apparatus has a ceramic plate, a porous plug, an insulating lid, and pores. The ceramic plate has a wafer placement surface as an upper surface. The porous plug is disposed in a plug insertion hole penetrating the ceramic plate in an up-down direction, and allows a gas to flow. The insulating lid is provided in contact with an upper surface of the porous plug, and exposed to the wafer placement surface. A plurality of pores are provided in the insulating lid, and penetrate the insulating lid in an up-down direction.

Abstract: An atomic beam generator includes a cathode constituted as a housing having an emission surface provided with an irradiation port through which an atomic beam is emissive; an anode disposed inside the cathode to generate plasma between the cathode and the anode; and a magnetic field generating unit including a first magnetic field generating unit that generates a first magnetic field and a second magnetic field generating unit that generates a second magnetic field, and guiding positive ions produced in the cathode to the emission surface by generating, in the cathode, the first magnetic field and the second magnetic field both parallel to the emission surface such that a magnetic field direction is leftward in the first magnetic field and is rightward in the second magnetic field when viewed from an emission surface side on condition of the first magnetic field being positioned above the second magnetic field.

Abstract: A sensor element includes an element body and a porous protective layer arranged to cover a part of a surface of the element body. The protective layer includes an inlet protective layer arranged to cover a gas inlet formed in the surface of the element body, and at least a part of a face included in the surface of the element body, the face on which the gas inlet is opens, and an arithmetic average roughness Rap of an inner peripheral surface of an internal space of the inlet protective layer satisfies at least one of conditions below: the arithmetic average roughness Rap is 8 ?m or more, and the arithmetic average roughness Rap is higher than an arithmetic average roughness Rac of a bonding surface of the protective layer, the bonding surface at which the protective layer is bonded to the element body.

Abstract: A sensor element includes an element body having a measurement-object gas flow section formed therein, and a porous protective layer arranged to cover first to fifth surfaces of the element body. When an external wall that is the thinnest of parts of an external wall which constitute the element body and extend from the measurement-object gas flow section to the first to fifth surfaces is defined as a thinnest external wall and a surface corresponding to the thinnest external wall is defined as a closest surface, a part of the protective layer which covers the closest surface overlaps the entirety of the thinnest external wall when viewed in a direction perpendicular to the closest surface, and has one or more internal spaces formed therein which overlaps 80% or more of the thinnest external wall when viewed in the direction perpendicular to the closest surface.

Abstract: An atomic beam generator includes a cathode constituted as a housing having an emission surface provided with an irradiation port through which an atomic beam is emissive; an anode disposed inside the cathode to generate plasma between the cathode and the anode; and a magnetic field generating unit including a first magnetic field generating unit that generates a first magnetic field and a second magnetic field generating unit that generates a second magnetic field, and guiding positive ions produced in the cathode to the emission surface by generating, in the cathode, the first magnetic field and the second magnetic field both parallel to the emission surface such that a magnetic field direction is leftward in the first magnetic field and is rightward in the second magnetic field when viewed from an emission surface side on condition of the first magnetic field being positioned above the second magnetic field.

Abstract: A composite substrate according to the present invention includes a support substrate having a diameter of 2 inches or more, and a piezoelectric substrate having a thickness of 20 ?m or less and bonded to the support substrate to transmit light. The piezoelectric substrate has a thickness distribution shaped like a fringe. A waveform having an amplitude within a range of 5 to 100 nm in a thickness direction and a pitch within a range of 0.5 to 20 mm in a width direction appears in the thickness distribution of the piezoelectric substrate in a cross section of the composite substrate taken along a line orthogonal to the fringe, and the pitch of the waveform correlates with a width of the fringe. In the piezoelectric substrate, the fringe may include either parallel fringes or spiral or concentric fringes.

Abstract: An atomic beam source includes a tubular cathode that includes an emission portion that includes an emission port through which an atomic beam can be emitted, a rod-shaped first anode disposed inside the cathode, and a rod-shaped second anode disposed inside the cathode and spaced from the first anode. At least one selected from the group consisting of a shape of the cathode, a shape of the first anode, a shape of the second anode, and a positional relationship between the cathode, the first anode, and the second anode is predetermined so that emission of sputter particles resulting from collision of cations, which have been generated by plasma between the first anode and the second anode, with at least one selected from the cathode, the first anode, and the second anode is reduced.

Abstract: A production method for a composite substrate according to the present invention comprises (a) a step of mirror-polishing a piezoelectric-substrate side of a laminated substrate formed by bonding a piezoelectric substrate and a support substrate; (b) a step of performing machining using an ion beam or a neutral atom beam so that a thickness of an outer peripheral portion of the piezoelectric substrate is larger than a thickness of an inner peripheral portion and a difference between a largest thickness and a smallest thickness of the inner peripheral portion of the piezoelectric substrate is 100 nm or less over an entire surface; and (c) a step of flattening the entire surface of the piezoelectric substrate to remove at least a part of an altered layer formed by the machining using the ion beam or the neutral atom beam in the step (b).

Abstract: A production method for a composite substrate according to the present invention comprises (a) a step of mirror-polishing a piezoelectric-substrate side of a laminated substrate formed by bonding a piezoelectric substrate and a support substrate; (b) a step of performing machining using an ion beam or a neutral atom beam so that a thickness of an outer peripheral portion of the piezoelectric substrate is larger than a thickness of an inner peripheral portion and a difference between a largest thickness and a smallest thickness of the inner peripheral portion of the piezoelectric substrate is 100 nm or less over an entire surface; and (c) a step of flattening the entire surface of the piezoelectric substrate to remove at least a part of an altered layer formed by the machining using the ion beam or the neutral atom beam in the step (b).

Abstract: A composite substrate according to the present invention includes a support substrate having a diameter of 2 inches or more, and a piezoelectric substrate having a thickness of 20 ?m or less and bonded to the support substrate to transmit light. The piezoelectric substrate has a thickness distribution shaped like a fringe. A waveform having an amplitude within a range of 5 to 100 nm in a thickness direction and a pitch within a range of 0.5 to 20 mm in a width direction appears in the thickness distribution of the piezoelectric substrate in a cross section of the composite substrate taken along a line orthogonal to the fringe, and the pitch of the waveform correlates with a width of the fringe. In the piezoelectric substrate, the fringe may include either parallel fringes or spiral or concentric fringes.

Abstract: An atomic beam source 10 includes a tubular cathode 20 that includes an emission portion 30 that includes an emission port 32 through which an atomic beam can be emitted, a rod-shaped first anode 40 disposed inside the cathode 20, and a rod-shaped second anode 50 disposed inside the cathode 20 and spaced from the first anode 40. At least one selected from the group consisting of a shape of the cathode, a shape of the first anode, a shape of the second anode, and a positional relationship between the cathode, the first anode, and the second anode is predetermined so that emission of sputter particles resulting from collision of cations, which have been generated by plasma between the first anode and the second anode, with at least one selected from the cathode, the first anode, and the second anode is reduced.

Abstract: A die for forming a honeycomb structure, including: a second plate-shaped portion that is formed of iron and the like and has back holes; and a first plate-shaped portion that is formed of tungsten carbide based cemented carbide and has cavities communicating with the back holes and slits communicating with the cavities, with the first plate-shaped portion having a first layer arranged in the second plate-shaped portion side and a second layer arranged on the first layer, the cavities are opened on both sides of the first layer, and the slits are opened on both sides of the second layer.

Abstract: By providing a manufacturing method of an electrode for a honeycomb structure forming die including: arranging a plurality of processing electrodes 161 having a shape which is complementary to that of the flow-through cells, at positions corresponding to the plurality of flow-through cells in the one surface 107B of the electrode base body 102B; discharging electricity from the plurality of processing electrodes 161 toward the one surface 107B of the electrode base body 102B to carve the electrode base body 102B, so that a plurality of electrode cells having a shape which is analogous to that of the flow-through cells are formed in the electrode base body 102B; whereby obtaining a honeycomb electrode where a plurality of electrode cells partitioned by electrode partition walls appear on the one surface.

Abstract: A grinding apparatus 10 includes a controller 11 for controlling the entire apparatus, a grinding motor 14, a base metal 15 to be rotated by the grinding motor 14, and a grinding wheel 16 fixed to the base metal 15. In a grinding step, the grinding apparatus 10 is used and a surface 19 of an object to be polished 18 is ground with the grinding wheel 16 rotating at a peripheral speed of 10 m/s or less. In the grinding step, the surface 19 of the object to be polished 18 is preferably ground with the grinding wheel 16 rotating at a peripheral speed of 0.5 m/s or more. In the grinding step, a surface of alumina, sapphire, silicon carbide, or gallium nitride is ground as the object to be polished.

Abstract: By providing a honeycomb electrode, i.e., an electrode for a honeycomb structure forming die including a thick plate-like electrode base body made of an electricity discharging material and having two main surfaces, only one surface of two main surfaces of the electrode base body is provided with a plurality of electrode cells partitioned by electrode partition walls, and a shape of the electrode cells in the one surface is analogous to that of flow-through cells of the honeycomb structure.

Abstract: By providing a manufacturing method of an electrode for a honeycomb structure forming die including: preparing a thick plate-like electrode base body made of an electricity discharging material and having two surfaces; making a plurality of holes in the electrode base body at positions corresponding to flow-through cells; inserting processing electrodes into the holes, and discharging electricity from the insides of the holes toward side surfaces of the holes of the electrode base body to process the side surfaces of the holes of the electrode base body into shapes corresponding to the porous partition walls; whereby obtaining an electrode where a plurality of electrode cells partitioned by electrode partition walls appear on at least one of the surfaces thereof.

Abstract: The present invention provides: a method of polishing an object to be polished for processing a surface of the object to be polished into a concave or convex state with a high degree of accuracy; and a polishing pad. An object to be polished is placed on a polishing pad over the boundary between the first polishing region and the second polishing region, the first polishing region has grooves and the second polishing region has grooves different from those of the first polishing region, and either one of the two regions being formed on a region on the center side, and the other on the outer side in a radial direction on the surface of the polishing pad; and the object to be polished is polished by rotating the polishing pad and the object to be polished.

Abstract: Disclosed is a die for forming a honeycomb structure, including: a second plate-shaped portion that has a second bonded surface, where a back hole for introducing a forming raw material is formed; and a first plate-shaped portion that has a first bonded surface, where a slit communicating with the back hole to form a forming raw material is formed, and a cavity communicating with the back hole and the slit is formed in the first bonded surface side, wherein the first plate-shaped portion is arranged on the second plate-shaped portion, an open end of the cavity on the first bonded surface has a diameter different from that of an open end of the back hole on the second bonded surface, and the open end of the cavity on the first bonded surface is arranged inside the open end of the back hole on the second bonded surface.