Abstract: A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).

Abstract: A composition for pattern formation includes a block copolymer. The block polymer includes a first labile group at an end of a main chain of the block copolymer. The first acid liable group is capable of being dissociated by an acid or heat. The composition preferably further contains an acid generator that generates an acid upon application of an energy. The block copolymer is preferably capable of forming a phase separation structure through directed self-assembly. The first labile group is preferably represented by formula (a). R represents a monovalent organic group having 1 to 20 carbon atoms; R? represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and * denotes a binding site to an atom at the end of the main chain of the block copolymer.

Abstract: A resist pattern-forming method comprises applying a chemically amplified radiation-sensitive resin composition on a substrate to form a resist film. The chemically amplified radiation-sensitive resin composition comprises a first component solubility in a developer solution of which is capable of being altered by an action of an acid, a second component that is capable of generating an acid by an action of a first exposure light comprising a radioactive ray having a first wavelength, and a sensitizer precursor to be converted into a sensitizer by an action of the first exposure light. A first exposure of the resist film to the first exposure light is conducted. A second exposure of the resist film exposed to the first exposure light, to a second exposure light is conducted. The second exposure light comprises a radioactive ray having a second wavelength longer than the first wavelength.

Abstract: A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

Abstract: A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

Abstract: A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10?28 m3.

Abstract: A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200.

Abstract: A composition for pattern formation includes a block copolymer and a solvent. The block copolymer is capable of forming a phase separation structure through directed self-assembly. The block copolymer includes a first block and a second block. The first block includes a first repeating unit which includes at least two silicon atoms. The second block includes a second repeating unit which does not include a silicon atom. A sum of the atomic weight of atoms constituting the first repeating unit is no greater than 700.

Abstract: A pattern-forming method includes providing a metal-containing film directly or indirectly on a substrate. A directed self-assembling film is provided directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed. At least a part of the plurality of phases of the directed self-assembling film is removed such that a pattern of the directed self-assembling film is formed. The metal-containing film and the substrate are sequentially etched using the pattern of the directed self-assembling film as a mask.

Abstract: A composition for pattern formation capable of forming a directed self-assembling film having a regular array structure with fine pitches accompanied by fewer defects, and in turn capable of forming a pattern having a fine and favorable shape. A composition for pattern formation contains a block copolymer that forms a phase separation structure by directed self-assembly, and a solvent, in which the block copolymer has a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of the main chain and links to the first block, in which the first group is a monovalent group that forms a compound having C log P of no less than 2.4 provided that a methyl group is bonded thereto.

Abstract: A composition for pattern formation includes a block copolymer. The block polymer includes a first labile group at an end of a main chain of the block copolymer. The first acid liable group is capable of being dissociated by an acid or heat. The composition preferably further contains an acid generator that generates an acid upon application of an energy. The block copolymer is preferably capable of forming a phase separation structure through directed self-assembly. The first labile group is preferably represented by formula (a). R represents a monovalent organic group having 1 to 20 carbon atoms; R? represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and * denotes a binding site to an atom at the end of the main chain of the block copolymer.

Abstract: A composition for a base of a directed self-assembling film includes a compound including an oxo acid group, and a solvent. The compound is preferably represented by formula (1). A represents an organic group having 10 or more carbon atoms and having a valency of n. B represents an oxo acid group. n is an integer of 1 to 200. In a case where n is 2 or greater, a plurality of Bs are identical or different.

Abstract: A composition for pattern formation includes a block copolymer and a solvent. The block copolymer includes a group including a reactive group on at least one end of a main chain of the block copolymer. A pattern-forming method includes providing a directed self-assembling film directly or indirectly on a substrate using the composition. The directed self-assembling film includes a phase separation structure which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.

Abstract: A composition for pattern formation includes a polymer or a polymer set including a plurality of polymers, and an acid generator. The polymer or the polymer set is capable of forming a phase separation structure through directed self-assembly. The polymer or at least one polymer in the polymer set includes an acid-labile group in a side chain thereof. The acid generator generates an acid upon application of energy. A pattern-forming method includes providing a directed self-assembling film on a substrate using the composition. The directed self-assembling film includes a phase separation structure.

Abstract: A composition for pattern formation includes a polymer or a polymer set including a plurality of polymers. The polymer or the polymer set is capable of forming a phase separation structure through directed self-assembly. The polymer or at least one polymer in the polymer set includes a crosslinkable group in a side chain thereof. A pattern-forming method includes providing a directed self-assembling film on a substrate using the composition. The directed self-assembling film includes a phase separation structure.

Abstract: A pattern-forming method includes providing a coating film using a composition that includes: a first polymer which is a block copolymer; and a second polymer having a surface free energy lower than a surface free energy of the first polymer, such that the second polymer is unevenly distributed to be localized into a superficial layer region of the coating film. Phase separation is caused in the coating film along a direction substantially perpendicular to a thickness direction of the coating film such that at least a part of the coating film is converted into a directed self-assembling film which includes a plurality of phases. A part of the plurality of phases of the directed self-assembling film is removed.

Abstract: A composition for pattern formation includes a block copolymer and a solvent. The block copolymer is capable of forming a phase separation structure through directed self-assembly. The block copolymer includes a first block and a second block. The first block includes a first repeating unit which includes at least two silicon atoms. The second block includes a second repeating unit which does not include a silicon atom. A sum of the atomic weight of atoms constituting the first repeating unit is no greater than 700.

Abstract: A pattern-forming method includes providing a metal-containing film directly or indirectly on a substrate. A directed self-assembling film is provided directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed. At least a part of the plurality of phases of the directed self-assembling film is removed such that a pattern of the directed self-assembling film is formed. The metal-containing film and the substrate are sequentially etched using the pattern of the directed self-assembling film as a mask.

Abstract: A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200.

Abstract: A radiation-sensitive resin composition that provides a resist coating film in a liquid immersion lithography process is provided, the radiation-sensitive resin composition being capable of exhibiting a great dynamic contact angle during exposure, whereby the surface of the resist coating film can exhibit a superior water draining property, and the radiation-sensitive resin composition being capable of leading to a significant decrease in the dynamic contact angle during development, whereby generation of development defects can be inhibited, and further shortening of a time period required for change in a dynamic contact angle is enabled. A radiation-sensitive resin composition including (A) a fluorine-containing polymer having a structural unit (I) that includes a group represented by the following formula (1), and (B) a radiation-sensitive acid generator.