Abstract: The present invention is a method and apparatus for controlling driving of the electric oil pump. The method includes the steps of deciding whether a predetermined time has elapsed after oil supply to the hydraulic chain tensioner has stopped, deciding whether an engine start prediction signal is inputted to a controller, and driving the electric oil pump to supply oil to the hydraulic tensioner when the engine start prediction signal is inputted. The present invention insures that oil pressure is maintained in the chamber of the hydraulic tensioner before cranking of the engine, thereby preventing oscillation of the chain and tensioner piston at the time of engine start up.

Abstract: The present invention is drawn to nucleic acid fragments specific to Xanthomonas campestris pathogenic to plants belonging to the family Gramineae, as well as methods for detecting the pathogenic Xanthomonas campestris using the same. The nucleic acid fragment of the invention has a nucleotide sequence which is at least 15 consecutive nucleotides of the nucleotide sequence shown in SEQ ID NO:1 or in the complementary chain thereof, or has no less than 15 nucleotides and hybridizes with the nucleic acid having the sequence shown in SEQ ID NO:1 or with the complementary chain thereof under stringent conditions.

Abstract: A process for manufacturing a semiconductor device wherein the number of input/output terminals can be selectively increased while using input/output amplifier circuit functional portions having the same circuit configuration, by using both ball bonding and TAB bonding techniques. Every two (4A, 4B) of the electrodes on the semiconductor device correspond to each one set of input/output amplifier circuits formed by three ones (6A, 6B, 6C) of the input/output amplifier circuits. The spacing S.sub.1 between the two electrodes (4A, 4B) corresponding to one set of input/output amplifier circuits is substantially equal to the spacing S.sub.2 between the electrode 4B and the adjacent electrode 4C of one adjacent set of input/output amplifier circuits and also to the spacing S.sub.3 between the electrode 4A and the adjacent electrode 4D of the other adjacent set of input/output amplifier circuits.

Abstract: A semiconductor wafer is arranged so that a burn-in test, which is performed to remove latent defects, can be conducted while the semiconductor chips are still on the semiconductor wafer. Sets of pad electrodes necessary for the burn-in test of the semiconductor chips are provided on each of the semiconductor wafers and are connected to external pad electrodes formed at a peripheral portion of the semiconductor wafer, by way of metal film wiring lines. High resistance polycrystalline silicone thin film wiring line portions which acts as fuses, and low resistance polycrystalline silicon wiring line portions which are cleanly cut upon dicing, are provided at a suitable intermediate location in the metal thin filming lines.

Abstract: The present invention relates to a herbicidal composition for the control of annual bluegrass, comprising a microorganism having an ability to control annual bluegrass and belonging to the genus Xanthomonas, and a sulfonylurea compound. The composition of the present invention shows excellent herbicidal activity against annual bluegrass and broad-leaved weeds, and is extremely useful as a herbicide for turf.

Abstract: A semiconductor device having any arbitrary size. The number of input/output terminals can be easily and selectively increased while using input/output amplifier circuit functional portions having the same circuit configuration, by using both ball bonding and TAB bonding techniques. Every two (4A, 4B) of the electrodes on the semiconductor device correspond to each one set of input/output amplifier circuits formed by three ones (6A, 6B, 6C) of the input/output amplifier circuits. The spacing S.sub.1 between the two electrodes (4A, 4B) corresponding to one set of input/output amplifier circuits is substantially equal to the spacing S.sub.2 between the electrode 4B and the adjacent electrode 4C of one adjacent set of input/output amplifier circuits and also to the spacing S.sub.3 between the electrode 4A and the adjacent electrode 4D of the other adjacent set of input/output amplifier circuits.

Abstract: A composite semiconductor device comprises a multilayer wiring board, a plurality of resin-sealed semiconductor devices having external leads projecting from the opposite sides thereof and stacked one on another, on a multilayer wiring board, and contact plates provided with wiring lines on the inner surfaces thereof and disposed close to the opposite sides of the resin-sealed semiconductor devices, respectively, with the wiring lines in electrical contact with the external leads of the resin-sealed semiconductor devices, respectively. Since the resin-sealed semiconductor devices are stacked, the degree of integration of the resin-sealed semiconductor devices is multiplied by the number of the resin-sealed semiconductor devices so stacked. Since the resin-sealed semiconductor devices are electrically interconnected by the wiring lines of the contact plates, the multilayer wiring board need not be provided with any wiring for electrically interconnecting the resin-sealed semiconductor devices.

Abstract: A resin-sealed semiconductor device comprising a semiconductor chip having pad electrodes formed on a circuit forming surface in the interior of the main surface and inner leads cemented to the semiconductor chip through an insulator for electric insulation such that ends of the inner leads reach the edge of the circuit forming surface of the semiconductor chip, wherein common conductors, which are connected with at least one of power supplying inner leads and/or grounding inner leads, and at least one of the inner leads are coupled on the semiconductor chip, and wherein the configuration of the common conductors and the inner leads coupled together is virtually L-shaped, T-shaped, -shaped, or cross-shaped.

Abstract: Disclosed is an IC card comprising a plurality of semiconductor IC chips and a plurality of lead wires acting as the terminals for connectin,o the electrodes of the semiconductor IC chips to the outside. The semiconductor IC chips and the lead wires are integrally sealed in a plastic board. This construction provides a significantly thin IC card of high reliability at low cost.

Abstract: A semiconductor device such as a semiconductor memory has a semiconductor chip bonded to an upper surface of a lead frame die pad, a polyimide film bonded to the upper surface of the semiconductor chip, and a quartz plate having a recess defined in a lower surface thereof, the quartz plate being bonded to an upper surface of the polyimide film with the recess being positioned over the integrated circuit of the semiconductor chip. The recess provides a gap between the polyimide film and the quartz plate for absorbing compressive stresses applied to the semiconductor device. The polyimide film, rather than the quartz plate, may have the recess. A plurality of leads are connected to the electrodes of the semiconductor chip by connecting wires. The lead frame, the semiconductor chip, the polyimide film, the quartz plate, the leads, and the connecting wires are sealed in a resin case.