Patents by Inventor Tomoko Koyama
Tomoko Koyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120314274Abstract: An electrophoretic display includes: a first substrate and a second substrate facing each other; a base portion provided on the first substrate; a first concave portion provided such that a surface of the second substrate side of the base portion is recessed, and a second concave portion having a shallower depth than that of the first concave portion; a reflection plate provided on the surface except for the first concave portion and the second concave portion; a first electrode provided in a bottom surface of the first concave portion; a second electrode provided in a bottom surface of the second concave portion; a third electrode provided in the second substrate; and a dispersion liquid filled between the first substrate and the second substrate, in which an electrophoretic particle having a different color from that of the reflection plate is dispersed in a dispersing medium.Type: ApplicationFiled: May 23, 2012Publication date: December 13, 2012Applicant: SEIKO EPSON CORPORATIONInventors: Harunobu KOMATSU, Tomoko KOYAMA
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Patent number: 7940133Abstract: An atomic frequency acquisition apparatus includes: a cell enclosing atomic gas therein; a laser light source that oscillates a laser light that enters the cell and excites the atomic gas; and a photodetecting section that detects the laser light that has passed through the cell, wherein the cell has at least a laser light reflection section inside thereof.Type: GrantFiled: March 1, 2010Date of Patent: May 10, 2011Assignee: Seiko Epson CorporationInventor: Tomoko Koyama
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Publication number: 20100148879Abstract: An atomic frequency acquisition apparatus includes: a cell enclosing atomic gas therein; a laser light source that oscillates a laser light that enters the cell and excites the atomic gas; and a photodetecting section that detects the laser light that has passed through the cell, wherein the cell has at least a laser light reflection section inside thereof.Type: ApplicationFiled: March 1, 2010Publication date: June 17, 2010Applicant: SEIKO EPSON CORPORATIONInventor: Tomoko KOYAMA
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Patent number: 7701302Abstract: An atomic frequency acquisition apparatus includes: a cell enclosing atomic gas therein; a laser light source that oscillates a laser light that enters the cell and excites the atomic gas; and a photodetecting section that detects the laser light that has passed through the cell, wherein the cell has at least a laser light reflection section inside thereof.Type: GrantFiled: December 22, 2006Date of Patent: April 20, 2010Assignee: Seiko Epson CorporationInventor: Tomoko Koyama
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Patent number: 7582233Abstract: A method of manufacturing directional coupler includes forming a first waveguide over a substrate, forming a separate section on respective ends of the first waveguide, and forming a second waveguide stacked over the first waveguide, wherein the first waveguide and the second waveguide are patterned by ink-jet process. The first waveguide and the second waveguide may be formed so as to overlap each other. The method may further include forming a projecting portion on the substrate, wherein the first waveguide being formed on the projection portion.Type: GrantFiled: April 10, 2006Date of Patent: September 1, 2009Assignee: Seiko Epson CorporationInventors: Tomoko Koyama, Takeo Kaneko, Taketomi Kamikawa, Norio Oguchi, Atsushi Harada
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Patent number: 7566909Abstract: A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, an emission section including a second semiconductor layer of a first conductivity type formed above the rectification section, an active layer formed above the second semiconductor layer and a third semiconductor layer of a second conductivity type formed above the active layer, and a photodetection section including the substrate, a photoabsorption layer formed above the substrate and a contact layer formed above the photoabsorption layer, wherein the first semiconductor layer and the contact layer are formed by a common process, the rectification section and the emission section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.Type: GrantFiled: January 31, 2006Date of Patent: July 28, 2009Assignee: Seiko Epson CorporationInventor: Tomoko Koyama
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Patent number: 7453914Abstract: An optical element includes a surface-emitting type semiconductor laser, and a light-receiving element that detects a part of laser light emitted from the surface-emitting type semiconductor laser, wherein the light-receiving element is formed above the surface-emitting type semiconductor laser and includes a semiconductor layer having one or more layers, and at least one of the layers in the semiconductor layer has a plane configuration that has anisotropy.Type: GrantFiled: November 23, 2005Date of Patent: November 18, 2008Assignee: Seiko Epson CorporationInventor: Tomoko Koyama
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Patent number: 7446618Abstract: An atomic frequency acquisition apparatus includes: a cell enclosing atomic gas therein; a laser light source that oscillates laser light that enters the cell and excites the atomic gas; and a photodetecting section that detects the laser light that has passed the cell, wherein the laser light source and the photodetecting section are attached to a common surface facing an interior of the cell, and the cell has a first reflection section on which the laser light oscillated from the laser light source is incident at an incident angle of 45 degrees, and a second reflection section on which the laser light reflected by the first reflection section is incident at an incident angle of 45 degrees.Type: GrantFiled: December 20, 2006Date of Patent: November 4, 2008Assignee: Seiko Epson CorporationInventor: Tomoko Koyama
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Patent number: 7385225Abstract: A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, and an emission section including a second semiconductor layer of a first conductivity type formed above the rectification section, an active layer formed above the second semiconductor layer and a third semiconductor layer of a second conductivity type formed above the active layer, wherein the rectification section and the emission section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.Type: GrantFiled: December 9, 2005Date of Patent: June 10, 2008Assignee: Seiko Epson CorporationInventor: Tomoko Koyama
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Publication number: 20070146085Abstract: An atomic frequency acquisition apparatus includes: a cell enclosing atomic gas therein; a laser light source that oscillates a laser light that enters the cell and excites the atomic gas; and a photodetecting section that detects the laser light that has passed through the cell, wherein the cell has at least a laser light reflection section inside thereof.Type: ApplicationFiled: December 22, 2006Publication date: June 28, 2007Applicant: SEIKO EPSON CORPORATIONInventor: Tomoko KOYAMA
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Publication number: 20070139128Abstract: An atomic frequency acquisition apparatus includes: a cell enclosing atomic gas therein; a laser light source that oscillates laser light that enters the cell and excites the atomic gas; and a photodetecting section that detects the laser light that has passed the cell, wherein the laser light source and the photodetecting section are attached to a common surface facing an interior of the cell, and the cell has a first reflection section on which the laser light oscillated from the laser light source is incident at an incident angle of 45 degrees, and a second reflection section on which the laser light reflected by the first reflection section is incident at an incident angle of 45 degrees.Type: ApplicationFiled: December 20, 2006Publication date: June 21, 2007Applicant: SEIKO EPSON CORPORATIONInventor: Tomoko Koyama
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Patent number: 7198411Abstract: A method is provided to precisely mount an optical device and an optical fiber without manual alignment. A tapered through-hole is provided in a substrate to house the optical device whose optical transmission point substantially coincides with a geometrical center. The optical transmitter having a larger diameter than a diameter of the optical device is further inserted in the tapered through-hole housing the optical device.Type: GrantFiled: March 9, 2004Date of Patent: April 3, 2007Assignee: Seiko Epson CorporationInventors: Eiichi Fujii, Tomoko Koyama
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Patent number: 7197203Abstract: An optical element includes a substrate, a surface-emitting type semiconductor laser above the substrate and including a first mirror, an active layer and a second mirror formed in this order from the substrate side, a first optical detection section formed above the substrate, a second optical detection section above the substrate and having a second photoabsorption layer, and an isolation layer between the surface-emitting type semiconductor laser and at least one of the first optical detection section and the second optical detection section. The first optical detection section includes a first photoabsorption layer above the substrate and a photonic crystal section above or below the first photoabsorption layer. The photonic crystal section has a one or a two dimensional photonic crystal structure having a periodic refractive index distribution in a plane that intersects a direction of light incident upon the first optical detection section.Type: GrantFiled: November 29, 2005Date of Patent: March 27, 2007Assignee: Seiko Epson CorporationInventor: Tomoko Koyama
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Patent number: 7138764Abstract: A light-emitting device includes a light-emitting layer capable of generating light by electroluminescence, a pair of electrodes applies an electric field to the light-emitting layer, and a substrate having a depression in a surface, and the light-emitting layer is disposed within the depression of the substrate.Type: GrantFiled: October 11, 2002Date of Patent: November 21, 2006Assignee: Seiko Epson CorporationInventors: Tomoko Koyama, Takeo Kaneko, Taketomi Kamikawa, Norio Oguchi, Atsushi Harada
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Patent number: 7129469Abstract: A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film.Type: GrantFiled: November 1, 2004Date of Patent: October 31, 2006Assignee: Seiko Epson CorporationInventors: Masamitsu Mochizuki, Tomoko Koyama, Hajime Onishi
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Publication number: 20060192088Abstract: A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, an emission section including a second semiconductor layer of a first conductivity type formed above the rectification section, an active layer formed above the second semiconductor layer and a third semiconductor layer of a second conductivity type formed above the active layer, and a photodetection section including the substrate, a photoabsorption layer formed above the substrate and a contact layer formed above the photoabsorption layer, wherein the first semiconductor layer and the contact layer are formed by a common process, the rectification section and the emission section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.Type: ApplicationFiled: January 31, 2006Publication date: August 31, 2006Applicant: SEIKO EPSON CORPORATIONInventor: Tomoko Koyama
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Publication number: 20060175617Abstract: A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, and an emission section including a second semiconductor layer of a first conductivity type formed above the rectification section, an active layer formed above the second semiconductor layer and a third semiconductor layer of a second conductivity type formed above the active layer, wherein the rectification section and the emission section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.Type: ApplicationFiled: December 9, 2005Publication date: August 10, 2006Applicant: Seiko Epson CorporationInventor: Tomoko Koyama
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Patent number: RE43759Abstract: A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission means 4 for emitting light containing wavelength components to be output, and a semi-reflecting layer group 2 wherein semi-reflecting layers 2R, 2G, and 2B that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions AR, AG, and AB are determined in association with the wavelengths of light to be output.Type: GrantFiled: June 2, 2000Date of Patent: October 23, 2012Assignees: Seiko Epson Corporation, Cambridge Display Technology LtdInventors: Tatsuya Shimoda, Tomoko Koyama, Takeo Kaneko, Jeremy Henley Burroughes
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Patent number: RE44164Abstract: A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission means 4 for emitting light containing wavelength components to be output, and a semi-reflecting layer group 2 wherein semi-reflecting layers 2R, 2G, and 2B that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions AR, AG, and AB are determined in association with the wavelengths of light to be output.Type: GrantFiled: June 2, 2000Date of Patent: April 23, 2013Assignees: Seiko Epson Corporation, Cambridge Display Technology LtdInventors: Tatsuya Shimoda, Tomoko Koyama, Takeo Kaneko, Jeremy Henley Burroughes
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Patent number: RE45442Abstract: A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission means 4 for emitting light containing wavelength components to be output, and a semi-reflecting layer group 2 wherein semi-reflecting layers 2R, 2G, and 2B that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions AR, AG, and AB are determined in association with the wavelengths of light to be output.Type: GrantFiled: April 12, 2011Date of Patent: March 31, 2015Assignees: Seiko Epson Corporation, Cambridge Display Technology LimitedInventors: Tatsuya Shimoda, Tomoko Koyama, Takeo Kaneko, Jeremy Henley Burroughes