Abstract: An energy storage device includes a current collector (negative electrode current collector), electrode body that includes a body portion and a tab projecting from the body portion, and a leading plate (negative electrode leading plate) that connects the current collector and the tab. In the leading plate, first and second plates and facing each other are continuously connected at end portions thereof in the first plate, the current collector is fixed to a first principal surface on the opposite side to the second plate. In the second plate, the tab is fixed to a second principal surface on the opposite side to the first plate.

Abstract: An energy storage device includes an electrode body in which an electrode is wound, a case that stores the electrode body, and spacers (side spacers) interposed between the case and the electrode body. The spacers each have an opening that exposes a portion of faces of curved portions of the electrode body from one end to the other end of the electrode body in a winding axis direction of the electrode body.

Abstract: An energy storage device includes an electrode body in which an electrode is wound, a case that stores the electrode body, and spacers (side spacers) interposed between the case and the electrode body. The spacers each have an opening that exposes a portion of faces of curved portions of the electrode body from one end to the other end of the electrode body in a winding axis direction of the electrode body.

Abstract: An energy storage device includes a current collector (negative electrode current collector), electrode body that includes a body portion and a tab projecting from the body portion, and a leading plate (negative electrode leading plate) that connects the current collector and the tab. In the leading plate, first and second plates and facing each other are continuously connected at end portions thereof. In the first plate, the current collector is fixed to a first principal surface on the opposite side to the second plate. In the second plate, the tab is fixed to a second principal surface on the opposite side to the first plate.

Abstract: A battery includes positive and negative external terminals having exposed portions exposed from a casing to the outside, positive and negative current collectors connected to the external terminals, and electrode assemblies having positive and negative electrodes and a separator. The positive and negative electrodes are wound with the separator being interposed so as to have positions shifted to opposite sides in a width direction to the separator. Formed in the casing is a narrowly elongated gap extending between the positive current collector side and the negative current collector side. The positive electrode side of the gap is closed by a closure member. A foreign material is prevented from moving without decreasing an electric capacity of the battery and deteriorating injection property of an electrolytic solution.

Abstract: A battery includes positive and negative external terminals having exposed portions exposed from a casing to the outside, positive and negative current collectors connected to the external terminals, and electrode assemblies having positive and negative electrodes and a separator. The positive and negative electrodes are wound with the separator being interposed so as to have positions shifted to opposite sides in a width direction to the separator. Formed in the casing is a narrowly elongated gap extending between the positive current collector side and the negative current collector side. The positive electrode side of the gap is closed by a closure member. A foreign material is prevented from moving without decreasing an electric capacity of the battery and deteriorating injection property of an electrolytic solution.

Abstract: The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.

Abstract: The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.