Abstract: A semiconductor device includes a semiconductor die having a top side surface comprising a semiconductor material including circuitry therein having bond pads connected to nodes in the circuitry, a bottom side surface, and sidewall surfaces between the top side surface and the bottom side surface. A metal coating layer including a bottom side metal layer is over the bottom side surface that extends continuously to a sidewall metal layer on the sidewall surfaces. The sidewall metal layer defines a sidewall plane that is at an angle from 10° to 60° relative to a normal projected from a bottom plane defined by the bottom side metal layer.

Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

Abstract: A semiconductor device includes a semiconductor die having a top side surface comprising a semiconductor material including circuitry therein having bond pads connected to nodes in the circuitry, a bottom side surface, and sidewall surfaces between the top side surface and the bottom side surface. A metal coating layer including a bottom side metal layer is over the bottom side surface that extends continuously to a sidewall metal layer on the sidewall surfaces. The sidewall metal layer defines a sidewall plane that is at an angle from 10° to 60° relative to a normal projected from a bottom plane defined by the bottom side metal layer.

Abstract: In examples, a transformer device comprises a first magnetic member; a second magnetic member; and a substrate layer between the first and second magnetic members. The substrate layer comprises a transformer coil. The transformer device includes a third magnetic member inside the substrate layer. The transformer coil encircles the third magnetic member. The third magnetic member physically separates from the first and second magnetic members.

Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

Abstract: A microelectronic device has a pillar connected to an external terminal by an intermetallic joint. Either the pillar or the external terminal, or both, include copper in direct contact with the intermetallic joint. The intermetallic joint includes at least 90 weight percent of at least one copper-tin intermetallic compound. The intermetallic joint is free of voids having a combined volume greater than 10 percent of a volume of the intermetallic joint; and free of a void having a volume greater than 5 percent of the volume of the intermetallic joint. The microelectronic device may be formed using solder which includes at least 93 weight percent tin, 0.5 weight percent to 5.0 weight percent silver, and 0.4 weight percent to 1.0 weight percent copper, to form a solder joint between the pillar and the external terminal, followed by thermal aging to convert the solder joint to the intermetallic joint.

Abstract: Disclosed is a solar battery module including: a solar battery cell; and a surface material laminated to cover a surface of said cell; wherein a photocatalyst layer is formed on said surface material. With this module, it is possible to prevent contamination to the surface material of a solar battery module and prevent loss of sunlight irradiation energy to the solar battery, and hence to maintain an electric generation power for a long time.

Abstract: In an optical waveguide comprising a transparent cladding (1) filled with a transparent liquid core (2) having a higher refractive index than the cladding, a liquid consisting of an oligomer having a phosphazene skeleton, typically phosphazene oil is used as the core (2). The waveguide is well resistant to heat and weathering, ensures stable performance in a wide temperature range over a long period of time, and provides good light transmission in a wide wavelength range covering the UV, visible and IR spectra.

Abstract: An electropotographic photoreceptor has a charge-transfer layer including at least two of charge-transfer materials, difference in oxidation potential between the charge-transfer materials being 0.1V or less and the charge-transfer materials having chemical structure similar to each other.