Abstract: A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.

Abstract: A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.

Abstract: A method for manufacturing a connection construction having a first and a second connection members bonded therebetween with a solder layer includes the steps of: sandwiching the solder layer between the first and the second connection members; decompressing the solder layer down to a first pressure with maintaining a first temperature, which is lower than a solidus of the solder; heating the solder layer up to a second temperature with maintaining the first pressure, the second temperature being higher than a luquidus of the solder; compressing the solder layer up to a second pressure with maintaining the second temperature, the second pressure being higher than the first pressure; and hardening the solder with maintaining the second pressure.

Abstract: When oil is discharged from an actuator 11i for lowering a vehicle height, an actuator pressure Pa is higher than a pump pressure Pp so that a differential pressure valve 41 slides its valving element 42 to the left by a pressure difference. A valving element seal portion 42b, abutted against a seat face 43a closing an opening of a lower return conduit 40b, moves from seat face 43a and open to lower return conduit 40b. As a result, the closure of the connected portion in the lower return conduit 40b is opened. Thus, the passage of a return conduit 40 is opened. Then, the oil from the actuator 11i is discharged via the return conduit 40 to the reserve tank 16 while receiving less flow resistance by avoiding a passage through any solenoid valve.

Abstract: A first table is provided on a fixed base so that the first table can be moved in one of two directions which cross each other at right angles. A second table is provided on the first table so that the second table can be moved in the other direction. Linear motors for applying the driving force to the first and second tables to directly drive these tables are provided between the fixed base and first table and between the first and second tables.

Abstract: A semiconductor pressure transducer comprising a piezoresistive semiconductor diaphragm, a cylindrical stem made of a glass having a thermal expansion coefficient approximating that of the diaphragm and hermetically bonded by anodic bonding to the latter, and a cylindrical holder hermetically bonded by anodic bonding to the cylindrical stem is disclosed. The holder is made of a ferromagnetic alloy material containing Fe, Co and Ni and having a mean thermal expansion coefficient of 35.times.10.sup.-7 /.degree.C. or less within the temperature range between 30.degree. C. and 350.degree. C.

Abstract: A differential pressure transmitter has a pressure receiving portion and a sensor portion which are constituted from separate parts separably jointed with each other. The sensor portion includes a semiconductor sensor having one side formed with a resistance pattern and the other side which has a thick-walled peripheral portion and a thick-walled central portion. The semiconductor sensor is incorporated in the sensor portion as being supported at the thick-walled peripheral portion thereof. The pressure receiving portion includes seal diaphragms disposed on both sides of the pressure receiving portion and a central diaphragm disposed therein. The semiconductor sensor is arranged such that the side thereof carrying the resistance pattern faces the pressure receiving portion.