Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Abstract: To provide a technique for improving image quality. A light detection apparatus includes: a semiconductor layer including a first surface and a second surface mutually positioned on opposite sides in a thickness direction; a plurality of photoelectric conversion regions provided on the semiconductor layer so as to be adjacent to each other via a separation region that stretches in the thickness direction of the semiconductor layer; a transistor provided for each of the photoelectric conversion regions on the side of the first surface of the semiconductor layer; and a transparent electrode which is provided on the side of the second surface of the semiconductor layer and to which a potential is applied. In addition, the separation region includes a conductor which stretches in the thickness direction of the semiconductor layer and the conductor is electrically connected on the side of the second surface of the semiconductor layer to the transparent electrode.

Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Abstract: Provided is a solid-state image sensor and an electronic device capable of suppressing the occurrence of a strong electrical field near a transistor while being compact. The solid-state image sensor includes a photoelectric conversion element that performs photoelectric conversion, an element isolation that penetrates from a first main surface to a second main surface of a substrate and that is formed between pixels including the photoelectric conversion element, and a conductive part provided in close contact with a first main surface side of the element isolation.

Abstract: A dispersion liquid according to the present invention contains metal oxide particles which have been surface-modified by at least one kind of silane compound and a solvent, the silane compound contains a methyl group or a methyl group and a hydrocarbon group having 2 or more carbon atoms, in a case where a transmission spectrum of the metal oxide particles that are obtained by drying the dispersion liquid by vacuum drying is measured within a wavenumber range of 800 cm?1 to 3,800 cm?1 with a Fourier transform infrared spectrophotometer, and values of the transmission spectrum are standardized such that a maximum value of the transmission spectrum in the range is 100 and a minimum value is 0, the following expression (1) is satisfied. IA/IB?3.

Abstract: In a dispersion liquid according to the present invention, regarding metal oxide particles that are obtained by vacuum-drying a dispersion liquid containing metal oxide particles which have been surface-modified by a methyl group and a phenyl group in a predetermined ratio, in a case where a transmission spectrum in a wavenumber range of 800 cm?1 or higher and 3,800 cm?1 or lower is measured by FT-IR, and values of the transmission spectrum are standardized, IA/IB?3.5 is satisfied (IA represents a spectrum value standardized at 3,500 cm?1, and IB represents a spectrum value standardized at 1,100 cm?1).

Abstract: In a dispersion liquid according to the present invention, regarding metal oxide particles that are obtained by vacuum-drying a dispersion liquid containing the metal oxide particles which have been surface-modified by at least one kind of a silane compound containing a methyl group and a hydrocarbon group having 2 or more carbon atoms and at least one kind of silicone compound, in a case where a transmission spectrum in a wavenumber range of 800 cm-1 or higher and 3,800 cm-1 or lower is measured by FT-IR, and values of the transmission spectrum are standardized, the following expression (1) is satisfied. IA/IB ? 3.5 (1) (“IA” represents a spectrum value standardized at 3,500 cm-1, and “IB” represents a spectrum value standardized at 1,100 cm-1).

Abstract: An imaging device includes a first chip (72). The first chip includes first and second pixels including respective first and second photoelectric conversion regions (PD) that convert incident light into electric charge. The first chip includes a first connection region for bonding the first chip to a second chip (73) and including a first connection portion (702, 702d) overlapped with the first photoelectric conversion region in a plan view, and a second connection portion overlapped with the second photoelectric conversion region in the plan view. The first photoelectric region receives incident light of a first wavelength, and the second photoelectric conversion region receives incident light of a second wavelength that is greater than the first wavelength. The first connection portion overlaps an area of the first photoelectric conversion region that is larger than an area of the second photoelectric conversion region overlapped by the second connection portion.

Abstract: The present disclosure relates to a solid-state image element and an electronic device provided as a solid-state image element and an electronic device capable of suppressing the occurrence of a strong electrical field near a transistor while being compact. The solid-state image element includes a photoelectric conversion element that performs photoelectric conversion, an element isolation that penetrates from a first main surface to a second main surface of a substrate and that is formed between pixels including the photoelectric conversion element, and a conductor part provided in close contact with a first main surface side of the element isolation. The present technology can be applied to, for example, a solid-state image element and an electronic device including the solid-state image element.

Abstract: A dispersion liquid contains a metal oxide particle surface-modified with a silane compound and a silicone compound, when a transmission spectrum of the metal oxide particles that are obtained by vacuum-drying the dispersion liquid is measured in a wavenumber range of 800 cm?1 or more and 3800 cm?1 or less with FT-IR, IA/IB?3.5 is satisfied (IA is a spectrum value at 3,500 cm?1 and IB is a spectrum value at 1,100 cm?1), and, when the dispersion liquid and methyl phenyl silicone are mixed such that a mass ratio of a total mass of the metal oxide particles and the surface-modifying material to a mass of methyl phenyl silicone becomes 30:70 and the hydrophobic solvent is removed, a viscosity is 9 Pa·s or less.

Abstract: Provided is a solid-state image sensor and an electronic device capable of suppressing the occurrence of a strong electrical field near a transistor while being compact. The solid-state image sensor includes a photoelectric conversion element that performs photoelectric conversion, an element isolation that penetrates from a first main surface to a second main surface of a substrate and that is formed between pixels including the photoelectric conversion element, and a conductive part provided in close contact with a first main surface side of the element isolation.

Abstract: Provided is a method for surface-modifying inorganic particles having a mixing step of mixing at least a surface-modifying material and the inorganic particles to obtain a liquid mixture and a dispersion step of dispersing the inorganic particles in the liquid mixture, in which a content of the inorganic particles in the liquid mixture is 10% by mass or more and 49% by mass or less, and a total content of the surface-modifying material and the inorganic particles in the liquid mixture is 65% by mass or more and 98% by mass or less.

Abstract: A dispersion liquid according to the present invention is a dispersion liquid containing metal oxide particles which have been surface-modified with a silane compound and a silicone compound, in which, when the dispersion liquid is dried by vacuum drying to separate the metal oxide particles, and a transmission spectrum of the separated metal oxide particles is measured in a wavenumber range from 800 cm?1 to 3800 cm?1 with a Fourier transform infrared spectrophotometer, Formula (1) below: IA/IB?3.5 is satisfied (in the formula, “IA” represents a spectrum value at 3500 cm?1 and “IB” represents a spectrum value at 1100 cm?1).

Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Abstract: An electrostatic chuck device includes: in order, an electrostatic chuck part having one principal surface serving as a placing surface on which a plate-shaped sample is placed, and having a built-in internal electrode for electrostatic attraction; a heating member bonded to a surface on the side opposite to the placing surface of the electrostatic chuck part in a pattern having gaps; a sheet material; and a base part having a function of cooling the electrostatic chuck part, in which a silicone resin sheet having a layer thickness of 10 ?m or more and less than 200 ?m and a Shore hardness (A) in a range of 10 to 70 is provided between the electrostatic chuck part and the heating member.

Abstract: An electrostatic chuck device includes: an electrostatic chuck part which incorporates an internal electrode for electrostatic attraction and has a placing surface on which a plate-like sample is placed; a base part which cools the electrostatic chuck part; and an adhesion layer which bonds the electrostatic chuck part and the base part to integrate the parts together, in which a first through-hole is provided in the electrostatic chuck part, a second through-hole that communicates with the first through-hole is provided in the base part, a tubular insulator is fixed in the second through-hole, an annular sealing member is sandwiched between the electrostatic chuck part and a distal end surface of the insulator, wherein the distal end surface is located on the electrostatic chuck part side of the insulator, and a tubular insulating wall member is located at the inner side of the sealing member in the radial direction.

Abstract: Provided is an electrostatic chuck device which includes: an electrostatic chuck section having one main surface serving as a placing surface on which a plate-shaped sample is placed, and having a built-in internal electrode for electrostatic attraction; a first adhesion layer which contains spacers and a silicone adhesive and in which a layer thickness D is in a range of 3 to 25 ?m and a ratio (?S/D) between the layer thickness D and an average particle diameter ?S of the spacers is in a range of 0.1 to 1.0; a plurality of heating members bonded to the surface on the side opposite to the placing surface of the electrostatic chuck section in a pattern having a gap with respect to one another by the first adhesion layer; a second adhesion layer which contains a silicone adhesive; and a base section having a function of cooling the electrostatic chuck section.

Abstract: An electrostatic chuck device includes: an electrostatic chuck section having one principal surface serving as a placing surface on which a plate-shaped sample is placed, and having a built-in electrostatic attracting internal electrode; a heating member bonded to a surface on the side opposite to the placing surface of the electrostatic chuck section in a pattern having gaps; a sheet material; and a base section having a function of cooling the electrostatic chuck section, in this order, in which each of the gaps of the pattern is filled with an inorganic filler composition which includes an inorganic filler and an adhesive.

Abstract: An imaging device includes a first chip (72). The first chip includes first and second pixels including respective first and second photoelectric conversion regions (PD) that convert incident light into electric charge. The first chip includes a first connection region for bonding the first chip to a second chip (73) and including a first connection portion (702, 702d) overlapped with the first photoelectric conversion region in a plan view, and a second connection portion overlapped with the second photoelectric conversion region in the plan view. The first photoelectric region receives incident light of a first wavelength, and the second photoelectric conversion region receives incident light of a second wavelength that is greater than the first wavelength. The first connection portion overlaps an area of the first photoelectric conversion region that is larger than an area of the second photoelectric conversion region overlapped by the second connection portion.

Abstract: To provide a shield and a dispenser from which the shield can be easily dispensed, the dispenser (100) according to the present invention stores a plurality of shields (1A) in a mutually detachable joined state in the container (50). As such, sliding and the like of the plurality of the shields (1A) against each other in the container (50) is suppressed and, therefore, sticking of the shields (1A) to each other due to the generation of static electricity is suppressed. Thus, a user can easily dispense the shields (1A) from the dispensing opening (51) of the container (50).