Patents by Inventor Tomomi Kondo

Tomomi Kondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6436230
    Abstract: A process device and a method for processing a substrate. A dipole ring magnet (DRM) is arranged in a manner so that a leakage magnetic field in the neighborhood of the process device and at a position a prescribed distance therefrom is minimized. The dipole ring magnet (DRM) rotates around an outer periphery of a process chamber which has a plasma generation device, a substantially cylindrical shield plate covering an outer periphery of the dipole ring magnet. The shield is rotated coaxially with the dipole ring magnet and in a direction opposite to the rotation of the dipole ring magnet. In this way a magnetic field is generated in a direction that cancels leakage magnetic flux generated outside the dipole ring magnet.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: August 20, 2002
    Assignee: Tokyo Electron Limited
    Inventors: Tomomi Kondo, Hidetoshi Kimura
  • Patent number: 6190495
    Abstract: The magnetron plasma processing apparatus includes a vacuum chamber in which a semiconductor wafer is accommodated. In the chamber, a pair of electrodes are provided to face each other, and the wafer is placed on one electrode. Between a pair of the electrodes, a vertical electric field is formed, and a horizontal magnetic field is formed by the dipole ring magnet to cross perpendicularly to the electric field. The magnetic field has a gradient of the magnetic field intensity such that the intensity is high on the upstream side and is low on the downstream side in the electron-drift direction. Further, the magnetic field is formed such that the intensity is made uniform over a large area including the end portion of the wafer on the upstream side in the electron-drift direction and a region right outside it.
    Type: Grant
    Filed: July 28, 1999
    Date of Patent: February 20, 2001
    Assignee: Tokyo Electron Limited
    Inventors: Kazuhiro Kubota, Shigeki Tozawa, Jun Hirose, Akira Koshiishi, Tomomi Kondo
  • Patent number: 6014943
    Abstract: A plasma process device includes a process vessel having a plasma generating area therein, a susceptor provided in the process vessel for supporting a substrate having a process surface, and a gas inlet means for introducing a process gas into the plasma generating area. A dipole ring magnet is arranged around the outer periphery of the process vessel, for generating a magnetic field having a magnetic line of force in the plasma generating area, so that a plasma of the process gas is generated in the plasma generating area. The dipole ring magnet has a plurality of anisotropic segment magnets arranged on an oval track, which are cylindrical permanent magnets having the same shape and size and magnetized in the diameter direction.
    Type: Grant
    Filed: September 11, 1997
    Date of Patent: January 18, 2000
    Assignees: Tokyo Electron Limited, Shin-Etsu Chemical Co., Ltd.
    Inventors: Junichi Arami, Hiroo Ono, Tomomi Kondo, Koji Miyata