Abstract: The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated.

Abstract: The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.

Abstract: There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

Abstract: In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.

Abstract: Disclosed is a method of manufacturing a semiconductor device in which a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method comprises the steps of connecting a supply power source for supplying high frequency power of a frequency of 1 MHz or more to a first electrode 2, and holding a substrate 21 on a second electrode 3 facing the first electrode 2, the substrate 21 on which a copper wiring is formed; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes 2, 3, and regulating a gas pressure of the film forming gas to 1 Torr or less; and supplying the high frequency power to any one of the first and second electrodes 2, 3 to convert the film forming gas into a plasma state, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react with each other and thus form a barrier insulating film covering the surface of the substrate 21.

Abstract: There are provided the steps of exposing a surface of a copper (Cu) wiring layer formed over a semiconductor substrate to a plasma of a gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF4 gas, a C2F6 gas and a NF3 gas, exposing the surface of the copper (Cu) wiring layer to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a &bgr;-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (CxHy), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (CxHy), and forming a Cu diffusion preventing insulating film on the copper (Cu) wiring layer.

Abstract: The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. In structure, the barrier insulating film 34a comprises a double-layered structure or more that is provided with at least a first barrier insulating film 34aa containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film 34ab containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.

Abstract: The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method includes the steps of forming a nitrogen containing insulating film on a substrate, forming a porous insulating film on the nitrogen-containing insulating film, forming an opening in the underlying insulating film and the porous insulating film, and forming a nitrogen containing insulating film on the surface of the porous insulating film and on the surface of the opening by bringing these surfaces into contact with a plasma of any one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas.

Abstract: The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated.

Abstract: A carrier for electrophotographic developer, including a core material and a resin layer formed on the surface of the core material, wherein the resin layer has a plastic deformation degree not less than 0.5 &mgr;m and an elastic deformation degree not less than 0.5 &mgr;m. The resin layer is preferably prepared by crosslinking a mixture including an acrylic resin having a reactive hydroxyl group and at least one of a perfectly-alkylated melamine compound and a perfectly-alkylated guanamine compound.

Abstract: Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.

Abstract: There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2.

Abstract: A dry toner for developing electrostatic images, including a colorant and a binder resin which comprises a copolymer resin having (A) a polyol resin moiety having a main chain of polyoxyalkylene and obtained by reaction of (a) an epoxy resin, (b) a dihydric phenol, and (c) an alkylene oxide adduct of a dihydric phenol or a glycidyl ether thereof; and (B) a polyester resin moiety obtained by reacting an alkylene oxide adduct of a dihydric phenol or a glycidyl ether thereof with a polycarboxylic acid, wherein the weight ratio of the epoxy resin of the polyol resin moiety (A) to the polyester resin moiety (B) is 95:5 to 60:40, wherein the epoxy resin includes at least two kinds of bisphenol epoxy resins having different number-average molecular weights, and wherein the binder resin has an acid value of not greater than 5.

Abstract: The present invention relates to a manufacturing method of a semiconductor device on which a barrier insulating film that coats a wiring, particularly a copper wiring, is formed. The configuration of the method includes the steps of: transforming film forming gas containing tetraethoxysilane (TEOS) and nitrogen monoxide (N2O) into plasma to cause reaction; and forming a barrier insulating film 35a, 39 that coats a copper wiring 34, 38 on a substrate 31 where the copper wiring 34, 38 is exposed on a surface thereof.

Abstract: A process gas containing any one of N2 or N2O is plasmanized and then a surface of a copper wiring layer is exposed to the plasmanized process gas, whereby a surface layer portion of a copper wiring layer is reformed and made into a copper diffusion preventing layer. According to this method, a noble semiconductor device can be provided, in which, along with increasing the operation speed, the copper diffusion is suppressed.

Abstract: The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. As for the constitution of the method of manufacturing a semiconductor device in which an insulating film 34 having a low dielectric constant is formed on a substrate 21 by allowing a film-forming gas to be converted into a plasma state and to react, the method comprises a step of forming a low-pressure insulating film 34a that constitutes the insulating film 34 on the substrate 21 by allowing said film-forming gas at first gas pressure to be converted into a plasma state and to react, and a step of forming a high-pressure insulating film 34b that constitutes the insulating film 34 on the low-pressure insulating film 34a by allowing the film-forming gas at second gas pressure being higher than the first gas pressure to be converted into a plasma state and to react.

Abstract: A toner is proposed which includes toner particles and a fluidity-imparting agent and have such characteristics that the toner particles has an average circularity of 0.93 to 0.97, and that a residue of the toner is in an amount of 10 mg or less when 100 g of the toner is sieved with a 500-mesh sieve, which toner is for use in an electrophotographic image formation method using an intermediate image transfer method. A full-color image formation method, using this toner, and an image formation apparatus in which this toner is used are also proposed.

Abstract: A carrier for an image developer for electrophotography, including a core material, and a coating layer covering the core material and containing a binder and a powder having an average particle diameter of D &mgr;m and a specific resistance of at least 1012 &OHgr;·cm. The coating layer has a thickness of h &mgr;m. The ratio D/h is greater than 1:1 but less than 5:1.

Abstract: In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.

Abstract: The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27,or28 on a substrate targeted for film formation.