Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.

Abstract: According to one embodiment, a substrate includes a semiconductor layer. The semiconductor layer comprises tungsten oxide particles having a first peak in a range of 268 to 274 cm?1, a second peak in a range of 630 to 720 cm?1, and a third peak in a range of 800 to 810 cm?1 in Raman spectroscopic analysis. The semiconductor layer has a thickness of 1 ?m or more. The semiconductor layer has a porosity of 20 to 80 vol %.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.

Abstract: According to one embodiment, there is provided a secondary battery. This secondary battery includes an electrode and an organic-fiber layer. The electrode includes a current collector including an edge part, an active material-containing layer including an end part supported on the edge part, and a current-collecting tab including a surface a part of which is adjacent to the edge part. The organic-fiber layer is bonded with the end part of the active material-containing layer with maximum thickness and with the part of the surface of the current-collecting tab.

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract: According to an aspect of the invention, there is provided a photovoltaic system including: a power generation module including at least one power generation section configured to convert energy of light to electrical power, and a power storage module including a plurality of power storage devices configured to store the electrical power converted by the power generation section. The power generation module and the power storage module are connected in parallel. In the power storage module, the plurality of power storage devices is connected in series. And, number of the power storage devices is larger than number of the power generation sections.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.

Abstract: The present invention provides an electrode material for batteries made from tungsten oxide powder, wherein the tungsten oxide powder has a first peak present within a wavenumber range of 268 to 274 cm?1, a second peak present within a wavenumber range of 630 to 720 cm?1, and a third peak present within a wavenumber range of 800 to 810 cm?1, when a Raman spectroscopic analysis method is performed on the electrode material.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include applying a resin liquid onto a first major surface of a workpiece. The workpiece has the first major surface and includes a plurality of element units and a resin layer holding the plurality of element units. The method causes the particles in the resin liquid to sink and forms a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece. The method raises a temperature of the workpiece to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion. In addition, the method divides the optical layer and the resin layer for the plurality of element units.

Abstract: According to one embodiment, there is provided a method for producing highly crystallized particles having a specific surface area of 5 m2/g or more. The raw material composition contains a resin and at least partially amorphous precursor particles. The composition is heat-treated to carbonize the resin and improve the crystallinity of the precursor particles. A mixture of highly crystallized particles and carbon is prepared. Then, a solution containing an acid is contacted with the mixture to react the acid with the carbon. The carbon is removed and a slurry containing reaction product is prepared. The highly crystallized particles include a first portion having a smaller diameter and a second portion having a larger diameter.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include applying a resin liquid onto a first major surface of a workpiece. The workpiece has the first major surface and includes a plurality of element units and a resin layer holding the plurality of element units. The method causes the particles in the resin liquid to sink and forms a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece. The method raises a temperature of the workpiece to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion. In addition, the method divides the optical layer and the resin layer for the plurality of element units.

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

Abstract: According to one embodiment, a substrate includes a semiconductor layer. The semiconductor layer comprises tungsten oxide particles having a first peak in a range of 268 to 274 cm?1, a second peak in a range of 630 to 720 cm?1, and a third peak in a range of 800 to 810 cm?1 in Raman spectroscopic analysis. The semiconductor layer has a thickness of 1 ?m or more. The semiconductor layer has a porosity of 20 to 80 vol %.

Abstract: According to one embodiment, an electrode material for a battery includes a tungsten oxide powder or a tungsten oxide composite powder provided with a coating unit containing at least one selected from a metal oxide, silicon oxide, a metal nitride, and silicon nitride.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

Abstract: According to one embodiment, a substrate processing system includes a measuring unit, a data processing unit, and a processing unit. The measuring unit is configured to measure information relating to a thickness dimension of a substrate. The substrate includes a light emitting unit and a wavelength conversion unit. The wavelength conversion unit includes a phosphor. The data processing unit is configured to determine processing information relating to a thickness direction of the wavelength conversion unit based on the measured information relating to the thickness dimension of the substrate and based on information relating to a characteristic of light emitted from the light emitting unit. The processing unit is configured to perform processing of the wavelength conversion unit based on the determined processing information.

Abstract: According to one embodiment, a semiconductor light emitting device wafer includes a plurality of semiconductor light emitting devices, the plurality of semiconductor light emitting devices being collectively formed, and includes a light emitting unit and a wavelength conversion unit. The light emitting unit has a first major surface and a second major surface on a side opposite to the first major surface. The wavelength conversion unit is provided on the first major surface side. The wavelength conversion unit contains a fluorescer. A thickness of the wavelength conversion unit changes based on a distribution in a surface of the wafer of at least one selected from a wavelength and an intensity of light emitted from the light emitting unit of the plurality of semiconductor light emitting devices.

Abstract: According to one embodiment, a solar cell includes a first substrate, a second substrate, a first electrode, a second electrode, a support unit, a sealing unit, a permeation suppression unit, and an electrolyte fluid. The first electrode is provided on a major surface of the first substrate. The second electrode is provided on a major surface of the second substrate. The support unit is provided on the second electrode. The support unit is configured to support a sensitizing dye. The sealing unit is configured to seal a circumferential edge portion of the first substrate and a circumferential edge portion of the second substrate. The permeation suppression unit is provided around the support unit on an inner side of the sealing unit. The electrolyte fluid is provided on an inner side of the permeation suppression unit.