Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array includes memory cells and a word line coupling the memory cells. A determination circuit determines whether write to a first memory cell group of the word line succeeded, and whether write to a second memory cell group of the word line succeeded. A test circuit counts application of write voltage during write to the word line, compares with a threshold a difference between a count of write voltage application upon success of one of respective writes to the first and second memory cell groups and a count of write voltage application upon success of the other of respective the writes, and outputs a result of the comparison.