Abstract: A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.

Abstract: Provided is a semiconductor device including: a substrate; a layer containing one or more kinds of polymer compounds on the substrate; and an organic semiconductor layer in contact with the layer containing the one or more kinds of polymer compounds, in which at least one kind of the one or more kinds of polymer compounds is a polymer compound having one or more secondary or tertiary aliphatic amino groups, wherein the one or more aliphatic amino groups of the polymer compound having the aliphatic amino groups are bound to at least one of a side chain or a branched chain, and wherein said the layer containing the one or more kinds of polymer compounds contains polysiloxane compounds. With the constitution, a semiconductor device excellent in crystallinity and orientation can be provided.

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.).

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1). General Formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.

Abstract: An organic semiconductor device that can be driven stably at low gate voltage is provided. The organic semiconductor device of the present invention is characterized by having a silsesquioxane skeleton in an insulating portion.

Abstract: The present invention relates to a transfer medium carrying member that excels in flame retardancy and provides good electrophotographical images. The transfer medium carrying member includes i) a resin and ii) a conductive filler, wherein the resin comprises a polycarbonate resin (a) that has a structural unit including a siloxane structure and a structural unit including a fluorene structure.

Abstract: There is provided a field effect transistor including a substrate, an organic semiconductor layer 6, an insulating layer 3, and a conductive layers 2, 4, and 5, wherein the insulating layer 3 comprises a cured product of a phenol resin represented by the following general formula (1): (R1, R2 and R3 each represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, X1 and X2 each represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.

Abstract: Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.

Abstract: Provided is a semiconductor device including: a substrate; a layer containing one or more kinds of polymer compounds on the substrate; and an organic semiconductor layer in contact with the layer containing the one or more kinds of polymer compounds, in which at least one kind of the one or more kinds of polymer compounds is a polymer compound having one or more secondary or tertiary aliphatic amino groups, wherein the one or more aliphatic amino groups of the polymer compound having the aliphatic amino groups are bound to at least one of a side chain or a branched chain, and wherein said the layer containing the one or more kinds of polymer compounds contains polysiloxane compounds. With the constitution, a semiconductor device excellent in crystallinity and orientation can be provided.

Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Abstract: An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which crystal grains having a maximum diameter of 10 ?m or more account for 25% or more of the surface area of the organic semiconductor layer. The organic semiconductor layer preferably contains 7 to 200 crystal grains having a maximum diameter of 10 ?m or more per 0.01 mm2. The organic semiconductor layer preferably contains a porphyrin crystal.

Abstract: A field effect transistor having a high field effect mobility is provided which can be obtained by a simple method. The field effect transistor includes an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by formula (2), which is obtained by the conversion by heating of the coating film of a porphyrin compound represented by formula (1), the organic semiconductor layer having crystal grains with a maximum diameter of 1 ?m or more, wherein R1 and R2 each independently denote at least one selected from the group consisting of hydrogen, halogen, hydroxyl, and alkyl having 1 to 12 carbon atoms; R3 denotes at least one selected from the group consisting of a hydrogen atom and an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.

Abstract: Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2?) in CuK? X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.80°±0.20°, and 16.90°±0.20°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.

Abstract: An organic semiconductor device that can be driven stably at low gate voltage is provided. The organic semiconductor device of the present invention is characterized by having a silsesquioxane skeleton in an insulating portion.

Abstract: A field effect transistor having a high field effect mobility is provided which can be obtained by a simple method. The field effect transistor includes an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by formula (2), which is obtained by the conversion by heating of the coating film of a porphyrin compound represented by formula (1), the organic semiconductor layer having crystal grains with a maximum metediar of 1 ?m or more, wherein R1 and R2 each independently denote at least one selected from the group consisting of hydrogen, halogen, hydroxyl, and alkyl having 1 to 12 carbon atoms; R3 denotes at least one selected from the group consisting of a hydrogen atom and an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.

Abstract: There is provided a method for producing a field effect transistor with a high field-effect mobility using a simple method for forming an organic semiconductor layer. A method for producing an organic field effect transistor comprising an organic semiconductor layer, comprising a step of forming the organic semiconductor layer by the photodecomposition of a bicyclic compound containing in a molecule thereof at least one bicyclic ring represented by formula (1): wherein R1 and R3 each denotes a group for forming an aromatic ring or a heteroaromatic ring which may have a substituent, together with a group to be bonded to R1 or R3; R2 and R4 each denotes a hydrogen atom, an alkyl group, an alkoxy group, an ester group or a phenyl group; and X is a leaving group which denotes carbonyl group or —N?.

Abstract: The invention provides a positive photosensitive resin composition which is free from film reduction, swelling or peeling at the time of development with an aqueous alkaline solution and which provides a dimensionally stable patterns after curing, and of which the final cured film has a low water absorption and excellent alkaline resistance. A positive photosensitive polyimide resin composition characterized by comprising an organic solvent-soluble polyimide having repeating units represented by the formula (1): (wherein m is an integer of from 3 to 10,000, R1 is a tetravalent organic group, R2 is a bivalent organic group, provided that from 5 to 100 mol % of R2 is a bivalent organic group having fluorine), a polyamic acid and a compound capable of generating an acid by irradiation with light.

Abstract: The present invention relates to a transfer medium carrying member that excels in flame retardancy and provides good electrophotographical images. The transfer medium carrying member includes i) a resin and ii) a conductive filler, wherein the resin comprises a polycarbonate resin (a) that has a structural unit including a siloxane structure and a structural unit including a fluorene structure.