Abstract: A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.

Abstract: A double-side-coated surface stress sensor includes a sensing membrane structure portion where at least two ends opposite each other are fixed on a mounting portion; a receptor layer that coats both surfaces of the sensing membrane structure portion; and an element detecting a stress, which is provided in the vicinity of at least one of the fixed two ends, opposite each other, of the sensing membrane structure portion or at least one of the fixed two ends, opposite each other, of the mounting portion, in which in a detection output is obtained from the element based on the stress which is applied onto the receptor layer coating both of the surfaces of the sensing membrane structure portion. Accordingly, it is possible to provide a double-side-coated surface stress sensor which coats both surfaces of the sensing membrane structure portion by the receptor layer, thereby obtaining a sufficiently large detection output.

Abstract: A double-side-coated surface stress sensor includes a sensing membrane structure portion where at least two ends opposite each other are fixed on a mounting portion; a receptor layer that coats both surfaces of the sensing membrane structure portion; and an element detecting a stress, which is provided in the vicinity of at least one of the fixed two ends, opposite each other, of the sensing membrane structure portion or at least one of the fixed two ends, opposite each other, of the mounting portion, in which in a detection output is obtained from the element based on the stress which is applied onto the receptor layer coating the both surfaces of the sensing membrane structure portion. Accordingly, it is possible to provide a double-side-coated surface stress sensor which coats both surfaces of the sensing membrane structure portion by the receptor layer, thereby obtaining a sufficiently large detection output.

Abstract: An optical electric field enhancement element includes a nanorod which includes a plurality of conductive layers formed therein in a direction parallel to a longitudinal axis of the nanorod. Adjacent conductive layers are isolated from each other via an insulating layer. The nanorod exhibits an effect of enhancing an optical electric field.

Abstract: The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.

Abstract: A main object of the present claimed invention is to provide a scanning probe microscope that can recognize a relative position between multiple probes accurately.

Abstract: The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.

Abstract: The optical electric field enhancement element of the invention comprises a nanorod where a conductive layer and an insulating layer are laminated. In particular, the optical electric field enhancement element comprising a tungsten oxide nanorod exhibits a high enhancement effect not by an aggregate of fine crystals but by the crystal structure itself, therefore securing good reproducibility and a stable Raman scattering enhancement effect. A sensor comprising the optical electric field enhancement element enables various high-precision analyses heretofore impossible in the art.

Abstract: The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.

Abstract: The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.

Abstract: A main object of the present claimed invention is to provide a scanning probe microscope that can recognize a relative position between multiple probes accurately.

Abstract: There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100) is preferably used as the semiconductor or insulator material.

Abstract: A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.

Abstract: A digital probing type atomic force microscope (AFM) for measuring high aspect structures with high precision. A probe 21 is vibrated while moved to the vicinity of an atomic force region on a specimen surface. The position of the probe is measured when a specified atomic force is detected in the atomic force region. The probe is then moved away from the specimen surface. A servo system for maintaining a gap between the probe and specimen surface is stopped. The probe is moved to a measurement point along the specimen surface while kept away from the specimen. The vibration frequency is a frequency slightly offset from the cantilever resonance point. The atomic force is detected based on the vibration amplitude of the cantilever.

Abstract: A point contact array, including plural point contacts electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, a memory device, a NOT circuit, and an electronic circuit including the same. The circuit includes plural point contacts each including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100) is preferably used as the semiconductor or insulator material.

Abstract: There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100) is preferably used as the semiconductor or insulator material.

Abstract: A digital probing type atomic force microscope (AFM) for measuring high aspect structures with high precision. A probe 21 is vibrated while moved to the vicinity of an atomic force region on a specimen surface. The position of the probe is measured when a specified atomic force is detected in the atomic force region. The probe is then moved away from the specimen surface. A servo system for maintaining a gap between the probe and specimen surface is stopped. The probe is moved to a measurement point along the specimen surface while kept away from the specimen. The vibration frequency is a frequency slightly offset from the cantilever resonance point. The atomic force is detected based on the vibration amplitude of the cantilever.

Abstract: The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.

Abstract: This invention provides a method for constructing bridge including fine wires or point contacts producing a quanitized inter-electrode conductance, and provides a method for easily controlling the conductance of this bridge. Further, it aims to provide an electronic element using conductance control due to the bridge, fine wire or point contact formed between the electrodes. These objects are accomplied with an electronic element comprising a first electrode comprising a mixed electroconducting material having ion conductance and electron conductance, and a second electrode comprising an electroconducting substance, wherein the inter-electric conductance can be controlled. In another aspect, this invention is an electronic element formed by a bridge between electrodes, by applying a voltage between the electrodes so that the second electrode is negative with respect to the first electrode and movable ions migrate from the first electrode to the second electrode.

Abstract: A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.