Patents by Inventor Tomonori Hino
Tomonori Hino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9911894Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.Type: GrantFiled: April 17, 2015Date of Patent: March 6, 2018Assignee: SONY CORPORATIONInventors: Akira Ohmae, Michinori Shiomi, Noriyuki Futagawa, Takaaki Ami, Takao Miyajima, Yuuji Hiramatsu, Izuho Hatada, Nobukata Okano, Shigetaka Tomiya, Katsunori Yanashima, Tomonori Hino, Hironobu Narui
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Publication number: 20150228846Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.Type: ApplicationFiled: April 17, 2015Publication date: August 13, 2015Inventors: Akira Ohmae, Michinori Shiomi, Noriyuki Futagawa, Takaaki Ami, Takao Miyajima, Yuuji Hiramatsu, Izuho Hatada, Nobukata Okano, Shigetaka Tomiya, Katsunori Yanashima, Tomonori Hino, Hironobu Narui
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Patent number: 9034738Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.Type: GrantFiled: September 21, 2006Date of Patent: May 19, 2015Assignee: SONY CORPORATIONInventors: Akira Ohmae, Michinori Shiomi, Noriyuki Futagawa, Takaaki Ami, Takao Miyajima, Yuuji Hiramatsu, Izuho Hatada, Nobukata Okano, Shigetaka Tomiya, Katsunori Yanashima, Tomonori Hino, Hironobu Narui
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Patent number: 8859401Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.Type: GrantFiled: May 6, 2011Date of Patent: October 14, 2014Assignee: Sony CorporationInventors: Akira Ohmae, Michinori Shiomi, Noriyuki Futagawa, Takaaki Ami, Takao Miyajima, Yuuji Hiramatsu, Izuho Hatada, Nobutaka Okano, Shigetaka Tomiya, Katsunori Yanashima, Tomonori Hino, Hironobu Narui
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Publication number: 20140151836Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.Type: ApplicationFiled: February 5, 2014Publication date: June 5, 2014Applicant: Sony CorporationInventors: Hironobu Narui, Tomonori Hino, Nobukata Okano, Jugo Mitomo
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Patent number: 8680540Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.Type: GrantFiled: January 3, 2007Date of Patent: March 25, 2014Assignee: Sony CorporationInventors: Hironobu Narui, Tomonori Hino, Nobukata Okano, Jugo Mitomo
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Patent number: 8575643Abstract: A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.Type: GrantFiled: October 23, 2007Date of Patent: November 5, 2013Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Tatsuo Ohashi
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Publication number: 20130250992Abstract: A semiconductor device comprising a substrate made of a material with a hexagonal crystal structure and having a substrate axis which is perpendicular to a principal surface of the substrate; and a nitride-based group III-V compound semiconductor layer grown directly on and in contact with the principal surface of the substrate without growing a buffer layer between the substrate and the nitride-based group III-V compound semiconductor layer, wherein, a direction of a growth axis of the semiconductor layer is substantially the same as a direction of the substrate axis of the substrate.Type: ApplicationFiled: March 20, 2013Publication date: September 26, 2013Applicant: Sony CorpprationInventors: AKIRA OHMAE, KOTA TOKUDA, MASAYUKI ARIMOCHI, NOBUHIRO SUZUKI, MICHINORI SHIOMI, TOMONORI HINO, KATSUNORI YANASHIMA
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Patent number: 8435880Abstract: In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than ?0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.Type: GrantFiled: October 18, 2010Date of Patent: May 7, 2013Assignee: Sony CorporationInventors: Akira Ohmae, Kota Tokuda, Masayuki Arimochi, Nobuhiro Suzuki, Michinori Shiomi, Tomonori Hino, Katsunori Yanashima
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Patent number: 8242513Abstract: Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.Type: GrantFiled: May 16, 2008Date of Patent: August 14, 2012Assignee: Sony CorporationInventors: Akira Ohmae, Masayuki Arimochi, Jugo Mitomo, Noriyuki Futagawa, Tomonori Hino
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Patent number: 8223814Abstract: The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed.Type: GrantFiled: September 23, 2010Date of Patent: July 17, 2012Assignee: Sony CorporationInventors: Hisayoshi Kuramochi, Tomonori Hino, Tatsuhiro Hirata, Yuta Yoshida
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Patent number: 8217407Abstract: A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.Type: GrantFiled: December 1, 2010Date of Patent: July 10, 2012Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Yuichiro Kikuchi, Tatsuo Ohashi
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Publication number: 20110249975Abstract: An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.Type: ApplicationFiled: June 14, 2011Publication date: October 13, 2011Applicant: Sony CorporationInventors: Nobukata Okano, Yoshiaki Watanabe, Jugo Mitomo, Tomonori Hino, Hironobu Narui
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Patent number: 8030109Abstract: A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm?3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm?3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.Type: GrantFiled: August 13, 2009Date of Patent: October 4, 2011Assignee: Sony CorporationInventors: Yasuo Sato, Jugo Mitomo, Mikihiro Yokozeki, Tomonori Hino, Hironobu Narui
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Publication number: 20110212559Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Applicant: SONY CORPORATIONInventors: Akira Ohmae, Michinori Shiomi, Noriyuki Futagawa, Takaaki Ami, Takao Miyajima, Yuuji Hiramatsu, Izuho Hatada, Nobutaka Okano, Shigetaka Tomiya, Katsunori Yanashima, Tomonori Hino, Hironobu Narui
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Publication number: 20110095401Abstract: In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than ?0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.Type: ApplicationFiled: October 18, 2010Publication date: April 28, 2011Applicant: SONY CORPORATIONInventors: Akira Ohmae, Kota Tokuda, Masayuki Arimochi, Nobuhiro Suzuki, Michinori Shiomi, Tomonori Hino, Katsunori Yanashima
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Publication number: 20110075693Abstract: The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed.Type: ApplicationFiled: September 23, 2010Publication date: March 31, 2011Applicant: SONY CORPORATIONInventors: Hisayoshi Kuramochi, Tomonori Hino, Tatsuhiro Hirata, Yuta Yoshida
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Publication number: 20110068363Abstract: A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.Type: ApplicationFiled: December 1, 2010Publication date: March 24, 2011Applicant: SONY CORPORATIONInventors: Yoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Yuichiro Kikuchi, Tatsuo Ohashi
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Patent number: 7858418Abstract: Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.Type: GrantFiled: October 17, 2007Date of Patent: December 28, 2010Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Yuichiro Kikuchi, Tatsuo Ohashi
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Patent number: 7786493Abstract: Disclosed herein is a light emitting diode includes: a first semiconductor layer of a first conductivity type; an active layer on the first semiconductor layer; a second semiconductor layer of a second conductivity type on the active layer; a first electrode configured to be electrically coupled to the first semiconductor layer; and a second electrode configured to be provided on the second semiconductor layer and be electrically coupled to the second semiconductor layer, the second electrode including a first metal film that has a predetermined shape and is composed mainly of silver and a second metal film that covers the first metal film and is composed mainly of palladium and/or platinum.Type: GrantFiled: January 3, 2007Date of Patent: August 31, 2010Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Tomonori Hino