Abstract: A semiconductor device includes: an n type semiconductor layer including an active region and an inactive region; an element structure formed in the active region and including at least an active side p type layer to form pn junction with n type portion of the n type semiconductor layer; an inactive side p type layer formed in the inactive region and forming pn junction with the n type portion of the n type semiconductor layer; a first electrode electrically connected to the active side p type layer in a front surface of the n type semiconductor layer; a second electrode electrically connected to the n type portion of the n type semiconductor layer in a rear surface of the n type semiconductor layer; and a crystal defect region formed in both the active region and the inactive region and having different depths in the active region and the inactive region.

Abstract: A semiconductor device includes: an n type semiconductor layer including an active region and an inactive region; an element structure formed in the active region and including at least an active side p type layer to form pn junction with n type portion of the n type semiconductor layer; an inactive side p type layer formed in the inactive region and forming pn junction with the n type portion of the n type semiconductor layer; a first electrode electrically connected to the active side p type layer in a front surface of the n type semiconductor layer; a second electrode electrically connected to the n type portion of the n type semiconductor layer in a rear surface of the n type semiconductor layer; and a crystal defect region formed in both the active region and the inactive region and having different depths in the active region and the inactive region.

Abstract: A semiconductor device includes: an n type semiconductor layer including an active region and an inactive region; an element structure formed in the active region and including at least an active side p type layer to form pn junction with n type portion of the n type semiconductor layer; an inactive side p type layer formed in the inactive region and forming pn junction with the n type portion of the n type semiconductor layer; a first electrode electrically connected to the active side p type layer in a front surface of the n type semiconductor layer; a second electrode electrically connected to the n type portion of the n type semiconductor layer in a rear surface of the n type semiconductor layer; and a crystal defect region formed in both the active region and the inactive region and having different depths in the active region and the inactive region.

Abstract: A semiconductor device includes: an n type semiconductor layer including an active region and an inactive region; an element structure formed in the active region and including at least an active side p type layer to form pn junction with n type portion of the n type semiconductor layer; an inactive side p type layer formed in the inactive region and forming pn junction with the n type portion of the n type semiconductor layer; a first electrode electrically connected to the active side p type layer in a front surface of the n type semiconductor layer; a second electrode electrically connected to the n type portion of the n type semiconductor layer in a rear surface of the n type semiconductor layer; and a crystal defect region formed in both the active region and the inactive region and having different depths in the active region and the inactive region.