Abstract: A semiconductor memory device according to an embodiment includes a substrate, a source line, word lines, a pillar, and a first member. The first member is provided to penetrate the source line. The first member includes a first portion which is far from the substrate, and a second portion which is near the substrate. The first member includes a first contact and a first insulating film. The first contact is provided to extend from the first portion to the second portion. The first contact is electrically connected to the substrate. The first insulating film insulates the source line from the first contact. The first member includes a stepped portion at a boundary part between the first portion and the second portion.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, a source line, word lines, a pillar, and a first member. The first member is provided to penetrate the source line. The first member includes a first portion which is far from the substrate, and a second portion which is near the substrate. The first member includes a first contact and a first insulating film. The first contact is provided to extend from the first portion to the second portion. The first contact is electrically connected to the substrate. The first insulating film insulates the source line from the first contact. The first member includes a stepped portion at a boundary part between the first portion and the second portion.

Abstract: According to one embodiment, in a semiconductor device, a stacked body is disposed above a substrate. In the stacked body, a conductive film and an insulating layer are alternately disposed in a stacking direction. A semiconductor columnar member penetrates the stacked body in a stacking direction. An insulating film surrounds the semiconductor columnar member. The insulating film penetrates the stacked body in the stacking direction. A pattern is disposed at a position adjacent to or close to a region. The region includes a penetration plug. The penetration plug extends from a position same as or above an upper end of the stacked body to a position below a lower end of the stacked body in the stacking direction. The pattern has a quadrangular or disjoined quadrangular shape.

Abstract: According to one embodiment, there is provided a memory device which includes a plurality of elements that include three-dimensionally arranged memory cells, a transistor that is electrically connected to at least one of the plurality of elements, an inspection pad that is connected in series to at least one of the plurality of elements through the transistor, and a wiring that is electrically connected to the inspection pad and a gate of the transistor and capable of supplying a common potential to both the inspection pad and the transistor for turning the transistor to an OFF state.

Abstract: According to one embodiment, in a semiconductor device, a stacked body is disposed above a substrate. In the stacked body, a conductive film and an insulating layer are alternately disposed in a stacking direction. A semiconductor columnar member penetrates the stacked body in a stacking direction. An insulating film surrounds the semiconductor columnar member. The insulating film penetrates the stacked body in the stacking direction. A pattern is disposed at a position adjacent to or close to a region. The region includes a penetration plug. The penetration plug extends from a position same as or above an upper end of the stacked body to a position below a lower end of the stacked body in the stacking direction. The pattern has a quadrangular or disjoined quadrangular shape.

Abstract: According to one embodiment, a semiconductor memory device includes a stacked body in which a plurality of insulating layers and a plurality of conductive layers are alternately stacked above a substrate, a pillar that penetrates the stacked body while extending in a stacking direction of the stacked body, and a semiconductor layer, a first insulating layer, a charge accumulation layer, and a second insulating layer, which are stacked on a side surface of the pillar in order from the pillar, wherein the semiconductor layer has an average grain size that is larger on a side nearer to the pillar and is smaller on a side nearer to the first insulating layer.

Abstract: According to one embodiment, there is provided a memory device which includes a plurality of elements that include three-dimensionally arranged memory cells, a transistor that is electrically connected to at least one of the plurality of elements, an inspection pad that is connected in series to at least one of the plurality of elements through the transistor, and a wiring that is electrically connected to the inspection pad and a gate of the transistor and capable of supplying a common potential to both the inspection pad and the transistor for turning the transistor to an OFF state.

Abstract: PAH is subjected to C—H/C—B coupling using a specific boron compound, a palladium compound, and o-chloranil to produce a compound in which a C—H bond of the PAH is directly arylated regioselectively in a simple manner. When the substrate and the boron compound are appropriately selected, a larger PAH can also be obtained by further performing an annulation reaction after the coupling reaction. Similarly, when PAH is subjected to C—H/C—H cross-coupling using a specific aromatic compound, a palladium compound, and o-chloranil, a compound in which a C—H bond of the PAH is directly arylated regioselectively can be produced in a simple manner. When the substrate and the aromatic compound are appropriately selected in this case, a larger PAH can also be obtained by further performing an annulation reaction after the cross-coupling reaction.

Abstract: PAH is subjected to C—H/C—B coupling using a specific boron compound, a palladium compound, and o-chloranil to produce a compound in which a C—H bond of the PAH is directly arylated regioselectively in a simple manner. When the substrate and the boron compound are appropriately selected, a larger PAH can also be obtained by further performing an annulation reaction after the coupling reaction. Similarly, when PAH is subjected to C—H/C—H cross-coupling using a specific aromatic compound, a palladium compound, and o-chloranil, a compound in which a C—H bond of the PAH is directly arylated regioselectively can be produced in a simple manner. When the substrate and the aromatic compound are appropriately selected in this case, a larger PAH can also be obtained by further performing an annulation reaction after the cross-coupling reaction.