Abstract: A power conversion device includes a sealing material that fills the housing space of a case and that has a sealing surface located above a peak point of a wire included in a semiconductor unit in a side view of the device. The power conversion device further includes a buffering member that extends in a predetermined direction in plan view of the device and that has a buffering bottom surface located above the peak point of the wire and under the sealing surface in the side view.

Abstract: A semiconductor device includes an insulating circuit-substrate on which a semiconductor chip is mounted, a casing accommodating the insulating circuit-substrate, and a plate-shaped terminal-connecting member having both ends suspended so that the terminal-connecting member extends between two opposite side-walls of the casing, the terminal-connecting member having a connection-terminal and load-absorbing portions, the connection-terminal being provided in a central region between the both ends so as to be connected to the semiconductor chip, the load-absorbing portions being provided between fixing points to the casing and the central region, the rigidity of the load-absorbing portions in a longitudinal direction being equal to or less than 50% of the rigidity of the central region so that the load-absorbing portions absorb load applied from the two side-walls and are deformed.

Abstract: A semiconductor device includes an insulating circuit-substrate on which a semiconductor chip is mounted, a casing accommodating the insulating circuit-substrate, and a plate-shaped terminal-connecting member having both ends suspended so that the terminal-connecting member extends between two opposite side-walls of the casing, the terminal-connecting member having a connection-terminal and load-absorbing portions, the connection-terminal being provided in a central region between the both ends so as to be connected to the semiconductor chip, the load-absorbing portions being provided between fixing points to the casing and the central region, the rigidity of the load-absorbing portions in a longitudinal direction being equal to or less than 50% of the rigidity of the central region so that the load-absorbing portions absorb load applied from the two side-walls and are deformed.

Abstract: An impurity of a second conductivity type is selectively doped in a surface of a semiconductor substrate of a first conductivity type to form doped regions. A portion of a surface of the doped regions is covered by a heat insulating film. At least a remaining portion of the surface of the doped regions is covered by an absorbing film and the doped regions are heated through the absorbing film, enabling an impurity region of the second conductivity type to be formed having two or more of the doped regions that have a same impurity concentration and differing carrier concentrations.

Abstract: An impurity of a second conductivity type is selectively doped in a surface of a semiconductor substrate of a first conductivity type to form doped regions. A portion of a surface of the doped regions is covered by a heat insulating film. At least a remaining portion of the surface of the doped regions is covered by an absorbing film and the doped regions are heated through the absorbing film, enabling an impurity region of the second conductivity type to be formed having two or more of the doped regions that have a same impurity concentration and differing carrier concentrations.

Abstract: An impurity of a second conductivity type is selectively doped in a surface of a semiconductor substrate of a first conductivity type to form doped regions. A portion of a surface of the doped regions is covered by a heat insulating film. At least a remaining portion of the surface of the doped regions is covered by an absorbing film and the doped regions are heated through the absorbing film, enabling an impurity region of the second conductivity type to be formed having two or more of the doped regions that have a same impurity concentration and differing carrier concentrations.

Abstract: An impurity of a second conductivity type is selectively doped in a surface of a semiconductor substrate of a first conductivity type to form doped regions. A portion of a surface of the doped regions is covered by a heat insulating film. At least a remaining portion of the surface of the doped regions is covered by an absorbing film and the doped regions are heated through the absorbing film, enabling an impurity region of the second conductivity type to be formed having two or more of the doped regions that have a same impurity concentration and differing carrier concentrations.

Abstract: A manufacturing method for a magnetic recording medium which includes a magnetic layer, a lower protective layer, an upper protective layer and a lubricating layer on a substrate, and in which the total film thickness of the lower protective layer and the upper protective layer is 2.5 nm or less, includes: 1) depositing the lower protective layer; 2) performing oxygen plasma treatment on the lower protective layer; 3) depositing the upper protective layer; and 4) performing nitrogen plasma treatment on the upper protective layer. It is preferable that the lower protective layer and the upper protective layer are formed of a carbon-based material, and it is further more preferable that the lower protective layer and the upper protective layer are formed of diamond-like carbon. Moreover, it is preferable that the contact angle of the lower protective layer with respect to water in the atmosphere is 25° or less.

Abstract: The magnetic recording medium for a heat-assisted recording system has a magnetic recording layer on a non-magnetic substrate and a protective layer on top of the magnetic recording layer. The protective layer includes a first lower protective layer on top of the magnetic recording layer, a first upper protective layer on the first lower protective layer, and a second protective layer on the first upper protective layer. The first lower protective layer is composed mainly of an element selected from the group consisting of Si, Al and Cu, and the first upper protective layer is a layer configured by an oxide of the material of the first lower protective layer.

Abstract: A recording medium includes a magnetic recording layer formed on a substrate; a protective layer formed on the magnetic recording layer and having a total thickness that is equal to or greater than 1 nm but equal to or less than 2 nm. The protective layer is composed of a silicon oxide layer formed on the magnetic recording layer and having a thickness of 0.3 nm or more; a silicon layer formed on the silicon oxide layer and having a thickness of 0.2 nm or more; and an amorphous carbon layer formed on the silicon layer and having a thickness of 0.2 nm or more, and having a hydrogen content equal to or greater than 25.6 at % but equal to or less than 43.3 at %. Thus, magnetic spacing between the magnetic recording layer and a magnetic head advantageously may be reduced while maintaining the thermal insulation characteristics.

Abstract: The magnetic recording medium for a heat-assisted recording system has a magnetic recording layer on a non-magnetic substrate and a protective layer on top of the magnetic recording layer. The protective layer includes a first lower protective layer on top of the magnetic recording layer, a first upper protective layer on the first lower protective layer, and a second protective layer on the first upper protective layer. The first lower protective layer is composed mainly of an element selected from the group consisting of Si, Al and Cu, and the first upper protective layer is a layer configured by an oxide of the material of the first lower protective layer.

Abstract: A magnetic recording medium includes a substrate having sequentially formed thereon (a) a magnetic layer; (b) a protective layer having a thickness ranging from 1.0 nm to 2.5 nm and being composed of an amorphous metal layer having a thickness of at least 0.3 nm, the amorphous metal layer being composed of a metal selected from the group consisting of Si, Al, Ge, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W that is in an amorphous state; (c) a carbon layer formed on the amorphous metal layer and having a thickness of at least 0.3 nm, the carbon layer including amorphous carbon; and (d) a lubricating layer, wherein the carbon layer includes nitrogen atoms in a surface thereof in which a ratio of number of nitrogen atoms to total number of carbon atoms, nitrogen atoms, and oxygen atoms is 14 atomic % or less.

Abstract: A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.

Abstract: A recording medium for recording and reproducing information by means of a head which performs information readout and writing based on magnetic principles is disclosed. The medium comprises a magnetic layer formed on a substrate and a protective layer formed on the magnetic layer. The protective layer comprises an underlayer formed on the magnetic layer and includes a material selected from the group consisting of silicon, silicon carbide and germanium. A carbon layer formed on the underlayer includes amorphous carbon containing hydrogen. The amount of hydrogen in the carbon layer is 24.7 at % or higher and 46.8 at % or lower, the thickness of the underlayer is 0.3 nm or greater and 1.8 nm or less, and the thickness of the carbon layer is 0.2 nm or greater and 1.7 nm or less. The medium exhibits corrosion resistance, sliding durability and head flying characteristics, and reduces magnetic spacing while securing reliability.

Abstract: A recording medium includes a magnetic recording layer formed on a substrate; a protective layer formed on the magnetic recording layer and having a total thickness that is equal to or greater than 1 nm but equal to or less than 2 nm. The protective layer is composed of a silicon oxide layer formed on the magnetic recording layer and having a thickness of 0.3 nm or more; a silicon layer formed on the silicon oxide layer and having a thickness of 0.2 nm or more; and an amorphous carbon layer formed on the silicon layer and having a thickness of 0.2 nm or more, and having a hydrogen content equal to or greater than 25.6 at % but equal to or less than 43.3 at %. Thus, magnetic spacing between the magnetic recording layer and a magnetic head advantageously may be reduced while maintaining the thermal insulation characteristics.

Abstract: A manufacturing method for a magnetic recording medium which includes a magnetic layer, a lower protective layer, an upper protective layer and a lubricating layer on a substrate, and in which the total film thickness of the lower protective layer and the upper protective layer is 2.5 nm or less, includes: 1) depositing the lower protective layer; 2) performing oxygen plasma treatment on the lower protective layer; 3) depositing the upper protective layer; and 4) performing nitrogen plasma treatment on the upper protective layer. It is preferable that the lower protective layer and the upper protective layer are formed of a carbonvery easy to use VVery eas-based material, and it is further more preferable that the lower protective layer and the upper protective layer are formed of diamond-like carbon. Moreover, it is preferable that the contact angle of the lower protective layer with respect to water in the atmosphere is 25° or less.

Abstract: A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe.

Abstract: A magnetic recording medium includes a substrate having sequentially formed thereon a magnetic layer; a protective layer having a thickness ranging from 1.0 nm to 2.5 nm and being composed of an amorphous metal layer having a thickness of at least 0.3 nm formed on the magnetic layer, and a carbon layer composed of amorphous carbon having a thickness of at least 0.3 nm formed on the amorphous metal layer; and a lubricating layer, wherein the carbon layer includes nitrogen atoms in a surface thereof in which a ratio of number of nitrogen atoms to total number of carbon atoms, nitrogen atoms, and oxygen atoms is 14 atomic % or less. Recording performance is improved by reducing the thickness of the protective layer thereof. A method of manufacturing the magnetic recording medium includes performing a nitrogen plasma treatment on a surface of the carbon layer that is effective to adjust the ratio.

Abstract: A recording medium for recording and reproducing information by means of a head which performs information readout and writing based on magnetic principles is disclosed. The medium comprises a magnetic layer formed on a substrate and a protective layer formed on the magnetic layer. The protective layer comprises an underlayer formed on the magnetic layer and includes a material selected from the group consisting of silicon, silicon carbide and germanium. A carbon layer formed on the underlayer includes amorphous carbon containing hydrogen. The amount of hydrogen in the carbon layer is 24.7 at % or higher and 46.8 at % or lower, the thickness of the underlayer is 0.3 nm or greater and 1.8 nm or less, and the thickness of the carbon layer is 0.2 nm or greater and 1.7 nm or less. The medium exhibits corrosion resistance, sliding durability and head flying characteristics, and reduces magnetic spacing while securing reliability.

Abstract: An imprinting device has a fixed side pressing structure and a movable side pressing structure that is movable toward and away from the fixed side pressing structure. The fixed side pressing structure includes a fixed base plate, a positioning pin for positioning a fixed stamper and a recording medium substrate, and a fixed stamper support for holding the stamper in place using suction. The movable side pressing structure includes a movable base plate, a positioning pin for positioning a movable stamper, and a movable stamper support for holding the movable stamper in position using suction, electromagnetism or adhesive.