Patents by Inventor Tomonori Nakayama
Tomonori Nakayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250008780Abstract: A display apparatus with high resolution is provided. The display apparatus includes a transistor, a light-emitting device, a first insulating layer, a second insulating layer, and a first conductive layer. The transistor includes a semiconductor layer and a second conductive layer electrically connected to the semiconductor layer. The light-emitting device includes a pixel electrode. The first insulating layer is provided over the transistor and includes a first opening reaching the second conductive layer. The first conductive layer covers the first opening. The second insulating layer is provided over the first insulating layer and includes a second opening in a region overlapping with the first opening. The pixel electrode covers a top surface of the second insulating layer and the second opening. The pixel electrode is electrically connected to the second conductive layer through the first conductive layer. An end portion of the first insulating layer is positioned over the second conductive layer.Type: ApplicationFiled: November 17, 2022Publication date: January 2, 2025Inventors: Masataka NAKADA, Masahiro KATAYAMA, Rai SATO, Yasuharu HOSAKA, Toshimitsu OBONAI, Masayoshi DOBASHI, Koji KUSUNOKI, Tomonori NAKAYAMA
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Patent number: 12125919Abstract: To provide a novel metal oxide. The metal oxide includes a first region and a second region. A third region is included between the first region and the second region. An interface of the first region is covered with the third region. The crystallinity of the third region is lower than the crystallinity of the first region. The crystallinity of the second region is lower than the crystallinity of the third region. The size of the first region measured from an image observed with a transmission electron microscope is greater than or equal to 1 nm and less than or equal to 3 nm.Type: GrantFiled: February 11, 2020Date of Patent: October 22, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Tomonori Nakayama, Masahiro Takahashi
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Publication number: 20240321577Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.Type: ApplicationFiled: May 20, 2024Publication date: September 26, 2024Inventors: Toshimitsu OBONAI, Yasuharu HOSAKA, Kenichi OKAZAKI, Masahiro TAKAHASHI, Tomonori NAKAYAMA, Tomosato KANAGAWA, Shunpei YAMAZAKI
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Publication number: 20240322018Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.Type: ApplicationFiled: May 30, 2024Publication date: September 26, 2024Applicant: Semiconductor Energy Laboratory Co., :Ltd.Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Junichi KOEZUKA, Tomonori NAKAYAMA, Motoki NAKASHIMA
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Patent number: 12009432Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to ?0.3 V.Type: GrantFiled: February 24, 2022Date of Patent: June 11, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hitoshi Kunitake, Yasuhiro Jinbo, Naoki Okuno, Masahiro Takahashi, Tomonori Nakayama
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Patent number: 12002876Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.Type: GrantFiled: December 20, 2022Date of Patent: June 4, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Tomonori Nakayama, Motoki Nakashima
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Patent number: 11929416Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a first insulator over the second oxide, a first conductor over the first insulator, and a second conductor and a third conductor over the second oxide. The second conductor includes a first region and a second region, the third conductor includes a third region and a fourth region, the second region is positioned above the first region, the fourth region is positioned above the third region, and each of the second conductor and the third conductor contains tantalum and nitrogen. The atomic ratio of nitrogen to tantalum in the first region is higher than the atomic ratio of nitrogen to tantalum in the second region, and the atomic ratio of nitrogen to tantalum in the third region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.Type: GrantFiled: September 2, 2019Date of Patent: March 12, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Ryo Tokumaru, Shinya Sasagawa, Tomonori Nakayama
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Publication number: 20230380180Abstract: A ferroelectric device (100) that includes a metal nitride film (130) with favorable ferroelectricity is provided. The ferroelectric device comprises a first conductor (110), a metal nitride film over the first conductor, a second conductor (120) over the metal nitride film, a first insulator (155) over the second conductor, and a second insulator (152) over the first insulator.Type: ApplicationFiled: October 12, 2021Publication date: November 23, 2023Inventors: Shunpei YAMAZAKI, Tomonori NAKAYAMA, Masahiro TAKAHASHI, Hitoshi KUNITAKE
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Publication number: 20230132342Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.Type: ApplicationFiled: December 20, 2022Publication date: April 27, 2023Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Tomonori Nakayama, Motoki Nakashima
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Publication number: 20230069109Abstract: A novel metal oxide and a formation method thereof are provided. The metal oxide includes a first crystal, a second crystal, and a region positioned between the first crystal and the second crystal. The c-axis of the first crystal is substantially parallel to the c-axis of the second crystal. The crystallinity of the region is lower than those of the first crystal and the second crystal. The width of the region in the direction perpendicular to the c-axis of the first crystal is greater than 0 nm and less than 1.5 nm. The first crystal and the second crystal each have a layered crystal structure.Type: ApplicationFiled: February 9, 2021Publication date: March 2, 2023Inventors: Shunpei YAMAZAKI, Tomonori NAKAYAMA
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Patent number: 11538928Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.Type: GrantFiled: May 26, 2021Date of Patent: December 27, 2022Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Tomonori Nakayama, Motoki Nakashima
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Publication number: 20220285560Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to ?0.3 V.Type: ApplicationFiled: February 24, 2022Publication date: September 8, 2022Inventors: Hitoshi KUNITAKE, Yasuhiro JINBO, Naoki OKUNO, Masahiro TAKAHASHI, Tomonori NAKAYAMA
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Patent number: 11407868Abstract: A method for producing an aqueous polyimide precursor solution includes forming a polyamic acid by the reaction of a tetracarboxylic acid component and a diamine component in water without organic solvent together with an imidazole in an amount of 1.6 mole or more per mole of the tetracarboxylic acid component of the polyamic acid.Type: GrantFiled: March 27, 2020Date of Patent: August 9, 2022Assignee: Ube Industries, Ltd.Inventors: Takeshige Nakayama, Susumu Takasaki, Tomonori Nakayama, Kensuke Hiroshige
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Patent number: 11407857Abstract: A method for producing an aqueous polyimide precursor solution composition includes forming a polyamic acid by the reaction of a tetracarboxylic acid component and a diamine component in an aqueous solvent together with an imidazole in an amount of 1.6 mole or more per mole of the tetracarboxylic acid component of the polyamic acid.Type: GrantFiled: March 27, 2020Date of Patent: August 9, 2022Assignee: Ube Industries, Ltd.Inventors: Takeshige Nakayama, Susumu Takasaki, Tomonori Nakayama, Kensuke Hiroshige
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Patent number: 11401418Abstract: A method for producing an aqueous polyimide precursor solution composition includes reacting a tetracarboxylic dianhydride and a diamine in the presence of an imidazole, using water as a reaction solvent to provide an aqueous polyimide precursor solution composition. The polyamic acid and the imidazole are dissolved in the water. A concentration of the polyamic acid is 5 to 45 wt %, The imidazole is an imidazole having two or more alkyl groups as substituents. An amount of the imidazole is 1.6 moles or more per mole of the tetracarboxylic dianhydride, and a concentration of the imidazole compound based on a sum of the imidazole compound and the water is 9.47 wt % or less. The diamine component includes a diamine having a solubility in water at 25° C. of 0.1 g/L or more.Type: GrantFiled: March 26, 2020Date of Patent: August 2, 2022Assignee: Ube Industries, Ltd.Inventors: Takeshige Nakayama, Tomonori Nakayama, Susumu Takasaki, Akira Kawabata, Kenji Sonoyama
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Publication number: 20220131010Abstract: To provide a novel metal oxide. The metal oxide includes a first region and a second region. A third region is included between the first region and the second region. An interface of the first region is covered with the third region. The crystallinity of the third region is lower than the crystallinity of the first region. The crystallinity of the second region is lower than the crystallinity of the third region. The size of the first region measured from an image observed with a transmission electron microscope is greater than or equal to 1 nm and less than or equal to 3 nm.Type: ApplicationFiled: February 11, 2020Publication date: April 28, 2022Inventors: Shunpei YAMAZAKI, Tomonori NAKAYAMA, Masahiro TAKAHASHI
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Publication number: 20220127713Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.Type: ApplicationFiled: February 10, 2020Publication date: April 28, 2022Inventors: Toshimitsu OBONAI, Yasuharu HOSAKA, Kenichi OKAZAKI, Masahiro TAKAHASHI, Tomonori NAKAYAMA, Tomosato KANAGAWA, Shunpei YAMAZAKI
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Publication number: 20210328037Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a first insulator over the second oxide, a first conductor over the first insulator, and a second conductor and a third conductor over the second oxide. The second conductor includes a first region and a second region, the third conductor includes a third region and a fourth region, the second region is positioned above the first region, the fourth region is positioned above the third region, and each of the second conductor and the third conductor contains tantalum and nitrogen. The atomic ratio of nitrogen to tantalum in the first region is higher than the atomic ratio of nitrogen to tantalum in the second region, and the atomic ratio of nitrogen to tantalum in the third region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.Type: ApplicationFiled: September 2, 2019Publication date: October 21, 2021Inventors: Shunpei YAMAZAKI, Ryo TOKUMARU, Shinya SASAGAWA, Tomonori NAKAYAMA
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Publication number: 20210280697Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.Type: ApplicationFiled: May 26, 2021Publication date: September 9, 2021Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Tomonori Nakayama, Motoki Nakashima
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Patent number: 11031506Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.Type: GrantFiled: August 28, 2019Date of Patent: June 8, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshikazu Ohno, Daisuke Yamaguchi, Tomonori Nakayama