Patents by Inventor Tomonori Nakayama

Tomonori Nakayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250008780
    Abstract: A display apparatus with high resolution is provided. The display apparatus includes a transistor, a light-emitting device, a first insulating layer, a second insulating layer, and a first conductive layer. The transistor includes a semiconductor layer and a second conductive layer electrically connected to the semiconductor layer. The light-emitting device includes a pixel electrode. The first insulating layer is provided over the transistor and includes a first opening reaching the second conductive layer. The first conductive layer covers the first opening. The second insulating layer is provided over the first insulating layer and includes a second opening in a region overlapping with the first opening. The pixel electrode covers a top surface of the second insulating layer and the second opening. The pixel electrode is electrically connected to the second conductive layer through the first conductive layer. An end portion of the first insulating layer is positioned over the second conductive layer.
    Type: Application
    Filed: November 17, 2022
    Publication date: January 2, 2025
    Inventors: Masataka NAKADA, Masahiro KATAYAMA, Rai SATO, Yasuharu HOSAKA, Toshimitsu OBONAI, Masayoshi DOBASHI, Koji KUSUNOKI, Tomonori NAKAYAMA
  • Patent number: 12125919
    Abstract: To provide a novel metal oxide. The metal oxide includes a first region and a second region. A third region is included between the first region and the second region. An interface of the first region is covered with the third region. The crystallinity of the third region is lower than the crystallinity of the first region. The crystallinity of the second region is lower than the crystallinity of the third region. The size of the first region measured from an image observed with a transmission electron microscope is greater than or equal to 1 nm and less than or equal to 3 nm.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: October 22, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tomonori Nakayama, Masahiro Takahashi
  • Publication number: 20240321577
    Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.
    Type: Application
    Filed: May 20, 2024
    Publication date: September 26, 2024
    Inventors: Toshimitsu OBONAI, Yasuharu HOSAKA, Kenichi OKAZAKI, Masahiro TAKAHASHI, Tomonori NAKAYAMA, Tomosato KANAGAWA, Shunpei YAMAZAKI
  • Publication number: 20240322018
    Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.
    Type: Application
    Filed: May 30, 2024
    Publication date: September 26, 2024
    Applicant: Semiconductor Energy Laboratory Co., :Ltd.
    Inventors: Shunpei YAMAZAKI, Kenichi OKAZAKI, Junichi KOEZUKA, Tomonori NAKAYAMA, Motoki NAKASHIMA
  • Patent number: 12009432
    Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to ?0.3 V.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: June 11, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hitoshi Kunitake, Yasuhiro Jinbo, Naoki Okuno, Masahiro Takahashi, Tomonori Nakayama
  • Patent number: 12002876
    Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.
    Type: Grant
    Filed: December 20, 2022
    Date of Patent: June 4, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Tomonori Nakayama, Motoki Nakashima
  • Patent number: 11929416
    Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a first insulator over the second oxide, a first conductor over the first insulator, and a second conductor and a third conductor over the second oxide. The second conductor includes a first region and a second region, the third conductor includes a third region and a fourth region, the second region is positioned above the first region, the fourth region is positioned above the third region, and each of the second conductor and the third conductor contains tantalum and nitrogen. The atomic ratio of nitrogen to tantalum in the first region is higher than the atomic ratio of nitrogen to tantalum in the second region, and the atomic ratio of nitrogen to tantalum in the third region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.
    Type: Grant
    Filed: September 2, 2019
    Date of Patent: March 12, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Ryo Tokumaru, Shinya Sasagawa, Tomonori Nakayama
  • Publication number: 20230380180
    Abstract: A ferroelectric device (100) that includes a metal nitride film (130) with favorable ferroelectricity is provided. The ferroelectric device comprises a first conductor (110), a metal nitride film over the first conductor, a second conductor (120) over the metal nitride film, a first insulator (155) over the second conductor, and a second insulator (152) over the first insulator.
    Type: Application
    Filed: October 12, 2021
    Publication date: November 23, 2023
    Inventors: Shunpei YAMAZAKI, Tomonori NAKAYAMA, Masahiro TAKAHASHI, Hitoshi KUNITAKE
  • Publication number: 20230132342
    Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.
    Type: Application
    Filed: December 20, 2022
    Publication date: April 27, 2023
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Tomonori Nakayama, Motoki Nakashima
  • Publication number: 20230069109
    Abstract: A novel metal oxide and a formation method thereof are provided. The metal oxide includes a first crystal, a second crystal, and a region positioned between the first crystal and the second crystal. The c-axis of the first crystal is substantially parallel to the c-axis of the second crystal. The crystallinity of the region is lower than those of the first crystal and the second crystal. The width of the region in the direction perpendicular to the c-axis of the first crystal is greater than 0 nm and less than 1.5 nm. The first crystal and the second crystal each have a layered crystal structure.
    Type: Application
    Filed: February 9, 2021
    Publication date: March 2, 2023
    Inventors: Shunpei YAMAZAKI, Tomonori NAKAYAMA
  • Patent number: 11538928
    Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: December 27, 2022
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Tomonori Nakayama, Motoki Nakashima
  • Publication number: 20220285560
    Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to ?0.3 V.
    Type: Application
    Filed: February 24, 2022
    Publication date: September 8, 2022
    Inventors: Hitoshi KUNITAKE, Yasuhiro JINBO, Naoki OKUNO, Masahiro TAKAHASHI, Tomonori NAKAYAMA
  • Patent number: 11407868
    Abstract: A method for producing an aqueous polyimide precursor solution includes forming a polyamic acid by the reaction of a tetracarboxylic acid component and a diamine component in water without organic solvent together with an imidazole in an amount of 1.6 mole or more per mole of the tetracarboxylic acid component of the polyamic acid.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: August 9, 2022
    Assignee: Ube Industries, Ltd.
    Inventors: Takeshige Nakayama, Susumu Takasaki, Tomonori Nakayama, Kensuke Hiroshige
  • Patent number: 11407857
    Abstract: A method for producing an aqueous polyimide precursor solution composition includes forming a polyamic acid by the reaction of a tetracarboxylic acid component and a diamine component in an aqueous solvent together with an imidazole in an amount of 1.6 mole or more per mole of the tetracarboxylic acid component of the polyamic acid.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: August 9, 2022
    Assignee: Ube Industries, Ltd.
    Inventors: Takeshige Nakayama, Susumu Takasaki, Tomonori Nakayama, Kensuke Hiroshige
  • Patent number: 11401418
    Abstract: A method for producing an aqueous polyimide precursor solution composition includes reacting a tetracarboxylic dianhydride and a diamine in the presence of an imidazole, using water as a reaction solvent to provide an aqueous polyimide precursor solution composition. The polyamic acid and the imidazole are dissolved in the water. A concentration of the polyamic acid is 5 to 45 wt %, The imidazole is an imidazole having two or more alkyl groups as substituents. An amount of the imidazole is 1.6 moles or more per mole of the tetracarboxylic dianhydride, and a concentration of the imidazole compound based on a sum of the imidazole compound and the water is 9.47 wt % or less. The diamine component includes a diamine having a solubility in water at 25° C. of 0.1 g/L or more.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: August 2, 2022
    Assignee: Ube Industries, Ltd.
    Inventors: Takeshige Nakayama, Tomonori Nakayama, Susumu Takasaki, Akira Kawabata, Kenji Sonoyama
  • Publication number: 20220131010
    Abstract: To provide a novel metal oxide. The metal oxide includes a first region and a second region. A third region is included between the first region and the second region. An interface of the first region is covered with the third region. The crystallinity of the third region is lower than the crystallinity of the first region. The crystallinity of the second region is lower than the crystallinity of the third region. The size of the first region measured from an image observed with a transmission electron microscope is greater than or equal to 1 nm and less than or equal to 3 nm.
    Type: Application
    Filed: February 11, 2020
    Publication date: April 28, 2022
    Inventors: Shunpei YAMAZAKI, Tomonori NAKAYAMA, Masahiro TAKAHASHI
  • Publication number: 20220127713
    Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.
    Type: Application
    Filed: February 10, 2020
    Publication date: April 28, 2022
    Inventors: Toshimitsu OBONAI, Yasuharu HOSAKA, Kenichi OKAZAKI, Masahiro TAKAHASHI, Tomonori NAKAYAMA, Tomosato KANAGAWA, Shunpei YAMAZAKI
  • Publication number: 20210328037
    Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a first insulator over the second oxide, a first conductor over the first insulator, and a second conductor and a third conductor over the second oxide. The second conductor includes a first region and a second region, the third conductor includes a third region and a fourth region, the second region is positioned above the first region, the fourth region is positioned above the third region, and each of the second conductor and the third conductor contains tantalum and nitrogen. The atomic ratio of nitrogen to tantalum in the first region is higher than the atomic ratio of nitrogen to tantalum in the second region, and the atomic ratio of nitrogen to tantalum in the third region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.
    Type: Application
    Filed: September 2, 2019
    Publication date: October 21, 2021
    Inventors: Shunpei YAMAZAKI, Ryo TOKUMARU, Shinya SASAGAWA, Tomonori NAKAYAMA
  • Publication number: 20210280697
    Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 9, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenichi Okazaki, Junichi Koezuka, Tomonori Nakayama, Motoki Nakashima
  • Patent number: 11031506
    Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: June 8, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshikazu Ohno, Daisuke Yamaguchi, Tomonori Nakayama