Patents by Inventor Tomonori Noguchi
Tomonori Noguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9657198Abstract: An impact-absorbing pressure-sensitive adhesive sheet according to an embodiment of the present invention includes an impact-absorbing pressure-sensitive adhesive layer including an impact-absorbing layer. A side surface of the impact-absorbing pressure-sensitive adhesive layer includes a tapered surface; and the tapered surface has a taper angle of 65° or more.Type: GrantFiled: August 27, 2014Date of Patent: May 23, 2017Assignee: NITTO DENKO CORPORATIONInventors: Tomonori Noguchi, Atsushi Hino, Kanji Nishida, Kazuo Kitada, Takaichi Amano
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Patent number: 9636877Abstract: A method for producing a transparent conductive film includes heat-treating a transparent conductive film comprising a transparent film substrate and a transparent conductive laminate including a first transparent conductive layer and a second transparent conductive layer, so that the first and the second transparent conductive layers in the transparent conductive film are crystallized, wherein the first transparent conductive layer is a first amorphous layer comprising indium oxide or an indium-based complex oxide having a tetravalent metal element oxide, the second transparent conductive layer is a second amorphous layer comprising an indium-based complex oxide having a tetravalent metal element oxide, wherein each of the first and the second contents of the tetravalent metal element oxide content is expressed by the formula: {the amount of the tetravalent metal element oxide/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%).Type: GrantFiled: October 11, 2013Date of Patent: May 2, 2017Assignee: NITTO DENKO CORPORATIONInventors: Motoki Haishi, Tomotake Nashiki, Tomonori Noguchi, Yoshifumi Asahara
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Patent number: 9475235Abstract: A transparent conductive film includes a transparent film substrate; and a first and second crystalline transparent conductive laminate, wherein the second crystalline layer is located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than a first content of the tetravalent metal element oxide of the second transparent conductive layer. The transparent conductive film allows a reduction in crystallization time.Type: GrantFiled: October 11, 2013Date of Patent: October 25, 2016Assignee: NITTO DENKO CORPORATIONInventors: Motoki Haishi, Tomotake Nashiki, Tomonori Noguchi, Yoshifumi Asahara
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Patent number: 9332633Abstract: There is provided a transparent conductive film which comprises: a film substrate; a plurality of transparent conductor patterns formed on the film substrate; and a pressure-sensitive adhesive layer wherein the transparent conductor patterns are embedded. The plurality of transparent conductor patterns respectively have a two-layer structure wherein a first indium tin oxide layer and a second indium tin oxide layer are laminated on the film substrate in this order, and the first indium tin oxide layer has a greater tin oxide content than the second indium tin oxide layer does. The first indium tin oxide layer has a smaller thickness than the second indium tin oxide layer does.Type: GrantFiled: January 10, 2014Date of Patent: May 3, 2016Assignee: NITTO DENKO CORPORATIONInventors: Tomotake Nashiki, Motoki Haishi, Tomonori Noguchi, Kuniaki Ishibashi, Daisuke Kajihara
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Patent number: 9260777Abstract: A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.Type: GrantFiled: December 27, 2006Date of Patent: February 16, 2016Assignee: NITTO DENKO CORPORATIONInventors: Tomotake Nashiki, Tomonori Noguchi, Hideo Sugawara
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Patent number: 9206505Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and further comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.Type: GrantFiled: April 27, 2012Date of Patent: December 8, 2015Assignee: NITTO DENKO CORPORATIONInventors: Tomotake Nashiki, Hideo Sugawara, Tomonori Noguchi, Akira Hamada, Yoshihisa Ito, Kuniaki Ishibashi
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Patent number: 9142332Abstract: A transparent conductive film comprises: a film substrate having two main surfaces; and a transparent conductor layer formed on one main surface of the film substrate. The transparent conductor layer is composed of three layers in which a first indium tin oxide layer, a second indium tin oxide layer, and a third indium tin oxide layer are laminated in this order from the film substrate side. The first indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has. The third indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has.Type: GrantFiled: October 1, 2012Date of Patent: September 22, 2015Assignee: NITTO DENKO CORPORATIONInventors: Tomotake Nashiki, Tomonori Noguchi, Motoki Haishi, Kuniaki Ishibashi
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Publication number: 20140360992Abstract: An impact-absorbing pressure-sensitive adhesive sheet according to an embodiment of the present invention includes an impact-absorbing pressure-sensitive adhesive layer including an impact-absorbing layer. A side surface of the impact-absorbing pressure-sensitive adhesive layer includes a tapered surface; and the tapered surface has a taper angle of 65° or more.Type: ApplicationFiled: August 27, 2014Publication date: December 11, 2014Applicant: NITTO DENKO CORPORATIONInventors: Tomonori Noguchi, Atsushi Hino, Kanji Nishida, Kazuo Kitada, Takaichi Amano
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Patent number: 8846197Abstract: An impact-absorbing pressure-sensitive adhesive sheet according to an embodiment of the present invention includes an impact-absorbing pressure-sensitive adhesive layer including an impact-absorbing layer. A side surface of the impact-absorbing pressure-sensitive adhesive layer includes a tapered surface; and the tapered surface has a taper angle of 65° or more.Type: GrantFiled: August 2, 2007Date of Patent: September 30, 2014Assignee: Nitto Denko CorporationInventors: Tomonori Noguchi, Atsushi Hino, Kanji Nishida, Kazuo Kitada, Takaichi Amano
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Patent number: 8734936Abstract: A transparent conductive film includes a transparent film substrate; and a first and second crystalline transparent conductive laminate, wherein the second crystalline layer is located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than a first content of the tetravalent metal element oxide of the second transparent conductive layer. The transparent conductive film allows a reduction in crystallization time.Type: GrantFiled: October 25, 2011Date of Patent: May 27, 2014Assignee: Nitto Denko CorporationInventors: Motoki Haishi, Tomotake Nashiki, Tomonori Noguchi, Yoshifumi Asahara
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Publication number: 20140124247Abstract: There is provided a transparent conductive film which comprises: a film substrate; a plurality of transparent conductor patterns formed on the film substrate; and a pressure-sensitive adhesive layer wherein the transparent conductor patterns are embedded. The plurality of transparent conductor patterns respectively have a two-layer structure wherein a first indium tin oxide layer and a second indium tin oxide layer are laminated on the film substrate in this order, and the first indium tin oxide layer has a greater tin oxide content than the second indium tin oxide layer does. The first indium tin oxide layer has a smaller thickness than the second indium tin oxide layer does.Type: ApplicationFiled: January 10, 2014Publication date: May 8, 2014Applicant: NITTO DENKO CORPORATIONInventors: Tomotake Nashiki, Motoki Haishi, Tomonori Noguchi, Kuniaki Ishibashi, Daisuke Kajihara
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Patent number: 8669476Abstract: There is provided a transparent conductive film which comprises: a film substrate; a plurality of transparent conductor patterns formed on the film substrate; and a pressure-sensitive adhesive layer wherein the transparent conductor patterns are embedded. The plurality of transparent conductor patterns respectively have a two-layer structure wherein a first indium tin oxide layer and a second indium tin oxide layer are laminated on the film substrate in this order, and the first indium tin oxide layer has a greater tin oxide content than the second indium tin oxide layer does. The first indium tin oxide layer has a smaller thickness than the second indium tin oxide layer does.Type: GrantFiled: October 3, 2012Date of Patent: March 11, 2014Assignee: Nitto Denko CorporationInventors: Tomotake Nashiki, Motoki Haishi, Tomonori Noguchi, Kuniaki Ishibashi, Daisuke Kajihara
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Publication number: 20140050908Abstract: A transparent conductive film comprises: a film substrate having two main surfaces; and a transparent conductor layer formed on one main surface of the film substrate. The transparent conductor layer is composed of three layers in which a first indium tin oxide layer, a second indium tin oxide layer, and a third indium tin oxide layer are laminated in this order from the film substrate side. The first indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has. The third indium tin oxide layer has a smaller tin oxide content than the second indium tin oxide layer has.Type: ApplicationFiled: October 1, 2012Publication date: February 20, 2014Applicant: NITTO DENKO CORPORATIONInventors: Tomotake Nashiki, Tomonori Noguchi, Motoki Haishi, Kuniaki Ishibashi
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Publication number: 20140035193Abstract: A method for producing a transparent conductive film includes heat-treating a transparent conductive film comprising a transparent film substrate and a transparent conductive laminate including a first transparent conductive layer and a second transparent conductive layer, so that the first and the second transparent conductive layers in the transparent conductive film are crystallized, wherein the first transparent conductive layer is a first amorphous layer comprising indium oxide or an indium-based complex oxide having a tetravalent metal element oxide, the second transparent conductive layer is a second amorphous layer comprising an indium-based complex oxide having a tetravalent metal element oxide, wherein each of the first and the second contents of the tetravalent metal element oxide content is expressed by the formula: {the amount of the tetravalent metal element oxide/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100 (%).Type: ApplicationFiled: October 11, 2013Publication date: February 6, 2014Inventors: Motoki Haishi, Tomotake Nashiki, Tomonori Noguchi, Yoshifumi Asahara
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Publication number: 20140036171Abstract: A transparent conductive film includes a transparent film substrate; and a first and second crystalline transparent conductive laminate, wherein the second crystalline layer is located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than a first content of the tetravalent metal element oxide of the second transparent conductive layer. The transparent conductive film allows a reduction in crystallization time.Type: ApplicationFiled: October 11, 2013Publication date: February 6, 2014Inventors: Motoki Haishi, Tomotake Nashiki, Tomonori Noguchi, Yoshifumi Asahara
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Patent number: 8580088Abstract: A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.Type: GrantFiled: October 25, 2011Date of Patent: November 12, 2013Assignee: Nitto Denko CorporationInventors: Motoki Haishi, Tomotake Nashiki, Tomonori Noguchi, Yoshifumi Asahara
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Publication number: 20120276397Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and further comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.Type: ApplicationFiled: April 27, 2012Publication date: November 1, 2012Applicant: NITTO DENKO CORPORATIONInventors: Tomotake NASHIKI, Hideo SUGAWARA, Tomonori NOGUCHI, Akira HAMADA, Yoshihisa ITO, Kuniaki ISHIBASHI
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Publication number: 20120243319Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first nonvolatile memory, and a voltage generation circuit configured to apply a voltage to the first nonvolatile memory, the voltage generation circuit includes a charge pump and an oscillator configured to generate a clock to be used to operate the charge pump. The voltage generation circuit changes a frequency of the clock.Type: ApplicationFiled: September 12, 2011Publication date: September 27, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Takamichi Kasai, Tomonori Noguchi
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Publication number: 20120114923Abstract: A transparent conductive film includes a transparent film substrate; and a first and second crystalline transparent conductive laminate, wherein the second crystalline layer is located between the transparent film substrate and the first transparent conductive layer, and a second content of the tetravalent metal element oxide of the second transparent conductive layer is higher than a first content of the tetravalent metal element oxide of the second transparent conductive layer. The transparent conductive film allows a reduction in crystallization time.Type: ApplicationFiled: October 25, 2011Publication date: May 10, 2012Applicant: NITTO DENKO CORPORATIONInventors: Motoki Haishi, Tomotake Nashiki, Tomonori Noguchi, Yoshifumi Asahara
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Publication number: 20120111718Abstract: A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.Type: ApplicationFiled: October 25, 2011Publication date: May 10, 2012Applicant: NITTO DENKO CORPORATIONInventors: Motoki HAISHI, Tomotake NASHIKI, Tomonori NOGUCHI, Yoshifumi ASAHARA