Abstract: A method according to the present invention for producing a semiconductor device includes the step of forming a connecting electrode for allowing connection with an outside electrode. The step includes the sub-steps of (i) forming, in a silicon substrate, a concave section whose inner wall is covered by a conductive layer, (ii) filling the concave section with a filler made of a material different from a material of the conductive layer, and (iii) exposing the conductive layer from a bottom surface of the silicon substrate. As a result, it is possible to speedily produce a semiconductor device favorably applicable to a laminated semiconductor device.