Abstract: A solar cell includes a crystalline silicon substrate, a P-doped silicon oxide layer that is formed on a principal surface of the crystalline silicon substrate and that includes phosphorus as an impurity, and an amorphous silicon layer that includes an intrinsic amorphous silicon layer and a p-type amorphous silicon layer. The intrinsic amorphous silicon layer is formed on the P-doped silicon oxide layer. The p-type amorphous silicon layer is formed on the intrinsic amorphous silicon layer and includes a p-type dopant. The intrinsic amorphous silicon layer includes the p-type dopant. The concentration of the p-type dopant in the thickness direction of the intrinsic amorphous silicon layer has a profile higher than the concentration of the p-type dopant at the interface between the P-doped silicon oxide layer and the intrinsic amorphous silicon layer.

Abstract: A solar cell includes a crystalline silicon substrate, a P-doped silicon oxide layer that is formed on a principal surface of the crystalline silicon substrate and that includes phosphorus as an impurity, and an amorphous silicon layer that includes an intrinsic amorphous silicon layer and a p-type amorphous silicon layer. The intrinsic amorphous silicon layer is formed on the P-doped silicon oxide layer. The p-type amorphous silicon layer is formed on the intrinsic amorphous silicon layer and includes a p-type dopant. The intrinsic amorphous silicon layer includes the p-type dopant. The concentration of the p-type dopant in the thickness direction of the intrinsic amorphous silicon layer has a profile higher than the concentration of the p-type dopant at the interface between the P-doped silicon oxide layer and the intrinsic amorphous silicon layer.

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers (11, 13).

Abstract: A configuration is provided for a deposition device using the catalytic CVD method which reduces problems associated with extension of the catalyst and is superior in terms of running costs and productivity. The configuration provides a chamber 1 able to maintain reduced interior pressure; a source gas introducing route 32, 33a for introducing source gas into the chamber; a catalyst 4 of tantalum wire having a boride layer on the surface and provided inside the chamber 1 so as to allow the source gas introduced via the source gas introducing route to come into contact with the surface of the catalyst; a gas introducing route 36, 33b for introducing boron-containing gas to the chamber 1 for the reformation of the boride layer on the surface of the catalyst 4; and a power supply unit 5 for applying energy to the catalyst 4 to maintain the catalyst at a predetermined temperature.