Patents by Inventor Tomonori Umezaki
Tomonori Umezaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11643748Abstract: A 4H-SiC single crystal having good morphology while preventing heterogeneous polymorphs from being mixed in regardless of the presence or absence of doping in growing a 4H-SiC single crystal by the TSSG method is obtained. When the off-angle on the grown crystal in a method for producing a SiC single crystal by a TSSG method is set to 60 to 68°, heterogeneous polymorphs are less likely to be mixed in during the growth of 4H-SiC single crystal, and if, during that period, a meltback method is used to smooth the surface of the seed crystal and then grow the crystal, it is possible to obtain a grown crystal having good morphology.Type: GrantFiled: November 1, 2018Date of Patent: May 9, 2023Assignee: CENTRAL GLASS CO., LTD.Inventors: Kazuto Kumagai, Tomonori Umezaki
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Publication number: 20200347511Abstract: A 4H-SiC single crystal having good morphology while preventing heterogeneous polymorphs from being mixed in regardless of the presence or absence of doping in growing a 4H-SiC single crystal by the TSSG method is obtained. When the off-angle on the grown crystal in a method for producing a SiC single crystal by a TSSG method is set to 60 to 68°, heterogeneous polymorphs are less likely to be mixed in during the growth of 4H-SiC single crystal, and if, during that period, a meltback method is used to smooth the surface of the seed crystal and then grow the crystal, it is possible to obtain a grown crystal having good morphology.Type: ApplicationFiled: November 1, 2018Publication date: November 5, 2020Applicant: CENTRAL GLASS CO., LTD.Inventors: Kazuto KUMAGAI, Tomonori UMEZAKI
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Patent number: 10151046Abstract: Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.Type: GrantFiled: September 10, 2015Date of Patent: December 11, 2018Assignees: National University Corporation Nagoya University, Central Glass Co., Ltd.Inventors: Toru Ujihara, Shunta Harada, Daiki Koike, Tomonori Umezaki
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Patent number: 9852914Abstract: The present invention is a sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and the sacrificial film embedded between the plurality of struts, including: a wet etching step where the sacrificial film is removed to its halfway depth by supplying an etchant to the surface of the substrate; a rinse step where a residue adhering to the surface of the substrate is washed out by supplying a rinsing liquid to the surface of the substrate after the wet etching step; a drying step where a liquid component on the surface of the substrate is removed after the rinse step; and a dry etching step where the sacrificial film remaining on the surface of the substrate is removed by supplying an etching gas to the surface of the substrate after the drying step.Type: GrantFiled: October 27, 2014Date of Patent: December 26, 2017Assignees: SCREEN Holdings Co., Ltd., CENTRAL GLASS COMPANY, LIMITEDInventors: Manabu Okutani, Tomonori Umezaki, Akiou Kikuchi
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Publication number: 20170260647Abstract: Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.Type: ApplicationFiled: September 10, 2015Publication date: September 14, 2017Inventors: Toru UJIHARA, Shunta HARADA, Daiki KOIKE, Tomonori UMEZAKI
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Publication number: 20160254162Abstract: The present invention is a sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and the sacrificial film embedded between the plurality of struts, including: a wet etching step where the sacrificial film is removed to its halfway depth by supplying an etchant to the surface of the substrate; a rinse step where a residue adhering to the surface of the substrate is washed out by supplying a rinsing liquid to the surface of the substrate after the wet etching step; a drying step where a liquid component on the surface of the substrate is removed after the rinse step; and a dry etching step where the sacrificial film remaining on the surface of the substrate is removed by supplying an etching gas to the surface of the substrate after the drying step.Type: ApplicationFiled: October 27, 2014Publication date: September 1, 2016Inventors: Manabu Okutani, Tomonori Umezaki, Akiou Kikuchi
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Publication number: 20160002574Abstract: A cleaning gas according to the present invention is intended for removing a silicon carbide-containing deposit on a base of at least partially graphitized carbon and is characterized by containing iodine heptafluoride. It is possible by the use of such a cleaning gas to remove silicon carbide without etching of graphite.Type: ApplicationFiled: January 24, 2014Publication date: January 7, 2016Applicant: CENTRAL GLASS COMPANY, LIMITEDInventors: Hiroyuki OOMORI, Akiou KIKUCHI, Tomonori UMEZAKI
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Patent number: 9230821Abstract: A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C?CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.Type: GrantFiled: May 7, 2014Date of Patent: January 5, 2016Assignee: Central Glass Company, LimitedInventors: Yasuo Hibino, Tomonori Umezaki, Akiou Kikuchi, Isamu Mori, Satoru Okamoto
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Patent number: 9165776Abstract: There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of ClF3, BrF5, BrF3, IF7 and IF5; and F2. It is possible by such a dry etching method to prevent non-uniformity of etching depth between the silicon layers.Type: GrantFiled: August 8, 2012Date of Patent: October 20, 2015Assignee: Central Glass Company, LimitedInventors: Tomonori Umezaki, Isamu Mori
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Patent number: 9093388Abstract: A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C?CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.Type: GrantFiled: January 25, 2011Date of Patent: July 28, 2015Assignee: Central Glass Company, LimitedInventors: Yasuo Hibino, Tomonori Umezaki, Akiou Kikuchi, Isamu Mori, Satoru Okamoto
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Patent number: 9082725Abstract: A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas.Type: GrantFiled: August 16, 2012Date of Patent: July 14, 2015Assignees: SCREEN Holdings Co., Ltd., Central Glass Company, LimitedInventors: Masahiro Kimura, Tomonori Umezaki, Akiou Kikuchi
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Patent number: 9017571Abstract: A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1?n?7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.Type: GrantFiled: June 24, 2011Date of Patent: April 28, 2015Assignee: Central Glass Company, LimitedInventors: Tomonori Umezaki, Yasuo Hibino, Isamu Mori, Satoru Okamoto, Akiou Kikuchi
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Publication number: 20150047680Abstract: Disclosed is a dry-cleaning method for removing a metal film adhered to a film-formation apparatus by using ?-diketone, the dry-cleaning method being characterized by that a gas containing ?-diketone and NOx (representing at least one of NO and N2O) is used as a cleaning gas and that the metal film within a temperature range of 200° C. to 400° C. is reacted with the cleaning gas, thereby removing the metal film. According to this method, it is possible to make etching progress even if there occurs a temperature difference depending on the position of the adhered metal film.Type: ApplicationFiled: February 20, 2013Publication date: February 19, 2015Inventors: Tomonori Umezaki, Yuta Takeda, Isamu Mori
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Publication number: 20140302683Abstract: The invention is directed to providing a dry etching agent having little effect on the global environment but having the required performance. Provided is a dry etching agent containing, each at a specific vol %: (A) a fluorine-containing unsaturated hydrocarbon represented by the formula CaFbHc (in the formula, a, b and c are each positive integers and satisfy the correlations of 2?a?5, c<b?1, 2a+2>b+c and b?a+c, excluding the case where a=3, b=4 or c=2); (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2, COF2, F2, NF3, Cl2, Br2, I2, and YFn (where Y is Cl, Br or I and n is an integer of 1 to 5); and (C) at least one kind of gas selected from the group consisting of N2, He, Ar, Ne, Xe, and Kr.Type: ApplicationFiled: June 13, 2012Publication date: October 9, 2014Applicant: Central Glass Company, LimitedInventors: Akiou Kikuchi, Tomonori Umezaki, Yasuo Hibino, Isamu Mori, Satoru Okamoto
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Publication number: 20140242803Abstract: A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C?CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.Type: ApplicationFiled: May 7, 2014Publication date: August 28, 2014Applicant: Central Glass Company, LimitedInventors: Yasuo HIBINO, Tomonori UMEZAKI, Akiou KIKUCHI, Isamu MORI, Satoru OKAMOTO
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Publication number: 20140206196Abstract: There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of ClF3, BrF5, BrF3, IF7 and IF5; and F2. It is possible by such a dry etching method to prevent non-uniformity of etching depth between the silicon layers.Type: ApplicationFiled: August 8, 2012Publication date: July 24, 2014Applicant: Central Glass Company, LimitedInventors: Tomonori Umezaki, Isamu Mori
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Publication number: 20140199852Abstract: A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas.Type: ApplicationFiled: August 16, 2012Publication date: July 17, 2014Inventors: Masahiro Kimura, Tomonori Umezaki, Akiou Kikuchi
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Publication number: 20130333729Abstract: Disclosed is a dry cleaning method for removing a composition represented by a compositional formula of MgaZnbOHc (0?a?1, 0?b?1, 0?c?1, and 0.5?a+b?1), which accumulates in a film formation chamber or in an exhaust pipe of an apparatus for forming a composition represented by a compositional formula of MgXZn1?XO (0?x?1) into a film, by using a cleaning gas. This method is characterized by that a cleaning gas containing ?-diketone is used and that the composition is removed by reacting the composition accumulated with the cleaning gas at a temperature of from 100° C. to 400° C. It is possible by this method to remove the composition without opening the apparatus.Type: ApplicationFiled: January 19, 2012Publication date: December 19, 2013Applicant: Central Glass Company, LimitedInventors: Tomonori Umezaki, Yuta Takeda
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Patent number: 8562751Abstract: A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with ?-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and ?-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to ?-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.Type: GrantFiled: January 17, 2012Date of Patent: October 22, 2013Assignees: Tokyo Electron Limited, Central Glass Company, LimitedInventors: Isao Gunji, Yusaku Izawa, Hitoshi Itoh, Tomonori Umezaki, Yuta Takeda, Isamu Mori
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Publication number: 20130221024Abstract: Disclosed is a halogen-containing gas supply apparatus for supplying a halogen-containing gas from a container filled with the halogen-containing gas at a high pressure to an external apparatus, the halogen-containing gas supply apparatus including: a supply tube connecting the container and the external apparatus; a supply valve attached to the supply tube to supply the halogen-containing gas from the container; and a shock wave prevention mechanism installed downstream of the supply valve to prevent generation of a shock wave.Type: ApplicationFiled: September 7, 2011Publication date: August 29, 2013Applicant: CENTRAL GLASS COMPANY, LIMITEDInventors: Akifumi Yao, Tomonori Umezaki, Keita Nakahara, Yuta Takeda