Abstract: A parameter determination device, a parameter determination method, and a parameter determination program for computing selected values of one or more parameters for an epitaxial growth system in a short time and at low costs are provided. The device includes an input unit that accepts a plurality of values for each of one or more parameters, position data of an epitaxial film, and characteristic data measured by a characteristic measurement device for a deposited epitaxial film; and a computation unit that computes a selected value of each of the one or more parameters from the position data, the characteristic data, and the values for each of the one or more parameters. The computation unit derives the response function FQj(x, ?Pk) to compute the selected value of the one or more parameters by simulation.

Abstract: Embodiments of the present invention may include a vehicle seat apparatus of a vehicle seat. The vehicle seat apparatus may have a seat pad, a plate member connected to the seat pad, and a linear member mounted to the plate member.

Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N?-type layer formed on an N+-type substrate. This trench is used to leave voids after the formation of a P?-type epitaxial film on the N?-type layer. Then, the voids formed in the N?-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Abstract: A process for obtaining an industrially useful 2-chloromethylbenzaldehyde-containing liquid composition at a high yield is provided. More specifically, a process for producing 2-chloromethylbenzaldehyde comprising step (A) of mixing 1-dichloromethyl-2-chloromethylbenzene and sulfuric acid having a concentration of 84.5% by weight or more; and step (B) of mixing a mixture obtained in step (A) and water is provided.

Abstract: A new process for producing a 2-(aryloxymethyl)benzaldehyde compound and the like are provided. More particularly, a process for producing a 2-(aryloxymethyl)benzaldehyde compound represented by formula (4) comprising step (A) of hydrolyzing a compound represented by the following formula (1); and step (B) of reacting a compound represented by formula (2) obtained in step (A) and a compound represented by formula (3) or a salt thereof is provided; in formulae, X1, X2 and X3 each represent independently a chlorine atom, a bromine atom or an iodine atom, Q1, Q2, Q3 and Q4 each represent independently a hydrogen atom or a halogen atom, and Ar represents a phenyl group optionally having a substituent).

Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N?-type layer formed on an N+-type substrate. This trench is used to leave voids after the formation of a P?-type epitaxial film on the N?-type layer. Then, the voids formed in the N?-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Abstract: A new process capable of producing a 2-(aryloxymethyl)benzaldehyde compound is provided. More particularly, a process for producing a 2-(aryloxymethyl)benzaldehyde compound represented by formula (2) comprising a step of hydrolyzing a compound represented by following formula (1); wherein X1 and X2 each represent independently a chlorine atom, a bromine atom or an iodine atom, Q1, Q2, Q3 and Q4 each represent independently a hydrogen atom or a halogen atom, and Ar represents a phenyl group optionally having a substituent.

Abstract: A semiconductor substrate preventing a void from being generated in an epitaxial film buried in a trench. An N-type first epitaxial film and first trenches are formed on an N+-type substrate body. A P-type second epitaxial film is buried in the first trenches. An N+-type third epitaxial film having the same composition as the first epitaxial film is formed on the first and second epitaxial films to form second trenches. A fourth epitaxial film is grown on the entire interior of the second trenches. The formation of the first and second trenches and the burying of the second and fourth epitaxial films are performed in a plurality of steps. Thus, the aspect ratio of the first and second trenches when the second and fourth epitaxial films are buried can be reduced. As a result, the second and fourth epitaxial films can be buried in the first and second trenches without causing a void.

Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N?-type layer formed on an N+-type substrate. This trench is used to leave voids after the formation of a P?-type epitaxial film on the N?-type layer. Then, the voids formed in the N?-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N?-type layer formed on an N+-type substrate. This trench is used to leave voids after the formation of a P?-type epitaxial film on the N?-type layer. Then, the voids formed in the N?-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N+-type substrate. This trench is used to leave voids after the formation of an N?-type layer. Then, the voids formed in the N+-type substrate can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Abstract: A new process capable of producing a 2-(aryloxymethyl)benzaldehyde compound is provided. More particularly, a process for producing a 2-(aryloxymethyl)benzaldehyde compound represented by formula (2) comprising a step of hydrolyzing a compound represented by following formula (1); wherein X1 and X2 each represent independently a chlorine atom, a bromine atom or an iodine atom, Q1, Q2, Q3 and Q4 each represent independently a hydrogen atom or a halogen atom, and Ar represents a phenyl group optionally having a substituent.

Abstract: A new process for producing a 2-(aryloxymethyl)benzaldehyde compound and the like are provided. More particularly, a process for producing a 2-(aryloxymethyl)benzaldehyde compound represented by formula (4) comprising step (A) of hydrolyzing a compound represented by the following formula (1); and step (B) of reacting a compound represented by formula (2) obtained in step (A) and a compound represented by formula (3) or a salt thereof is provided; in formulae, X1, X2 and X3 each represent independently a chlorine atom, a bromine atom or an iodine atom, Q1, Q2, Q3 and Q4 each represent independently a hydrogen atom or a halogen atom, and Ar represents a phenyl group optionally having a substituent).

Abstract: A process for obtaining an industrially useful 2-chloromethylbenzaldehyde-containing liquid composition at a high yield is provided. More specifically, a process for producing 2-chloromethylbenzaldehyde comprising step (A) of mixing 1-dichloromethyl-2-chloromethylbenzene and sulfuric acid having a concentration of 84.5% by weight or more; and step (B) of mixing a mixture obtained in step (A) and water is provided.

Abstract: Embodiments of the present invention may include a vehicle seat apparatus of a vehicle seat. The vehicle seat apparatus may have a seat pad, a plate member connected to the seat pad, and a linear member mounted to the plate member.

Abstract: A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer.

Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N+-type substrate. This trench is used to leave voids after the formation of an N?-type layer. Then, the voids formed in the N+-type substrate can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Abstract: A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.

Abstract: A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as ?. The second epitaxial film has an impurity concentration defined as ?. The arsenic concentration and the impurity concentration has a relationship of: ??3×1019×ln(?)?1×1021.

Abstract: A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.