Abstract: Provided is an aluminum nitride film in which, aluminum nitride crystal grains containing a metal element differing from aluminum and substituting for aluminum are main crystal grains of a polycrystalline film formed of crystal grains, and a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in at least one region of first and second regions corresponding to both end portions of the polycrystalline film in a film thickness direction of the polycrystalline film is higher than a concentration of the metal element in a center region of the aluminum nitride crystal grain in the at least one region, and is higher than a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in a third region located between the first region and the second region in the film thickness direction of the polycrystalline film.

Abstract: A multilayer ceramic capacitor includes: a multilayer chip having a parallelepiped shape in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked and each of the internal electrode layers is alternately exposed to two end faces of the multilayer chip, a main component of the plurality of dielectric layers being a ceramic; and a pair of external electrodes that are formed on the two end faces; wherein: the pair of external electrodes have a structure in which a plated layer is formed on a ground layer; a main component of the ground layer is a metal or an alloy including at least one of Ni and Cu; and at least a part of a surface of the ground layer on a side of the plated layer includes an interposing substance including Mo.

Abstract: A multilayer ceramic capacitor includes: a multilayer chip having a parallelepiped shape in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked and each of the internal electrode layers is alternately exposed to two end faces of the multilayer chip, a main component of the plurality of dielectric layers being a ceramic; and a pair of external electrodes that are formed on the two end faces; wherein: the pair of external electrodes have a structure in which a plated layer is formed on a ground layer; a main component of the ground layer is a metal or an alloy including at least one of Ni and Cu; and at least a part of a surface of the ground layer on a side of the plated layer includes an interposing substance including Mo.

Abstract: Provided is an aluminum nitride film in which, aluminum nitride crystal grains containing a metal element differing from aluminum and substituting for aluminum are main crystal grains of a polycrystalline film formed of crystal grains, and a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in at least one region of first and second regions corresponding to both end portions of the polycrystalline film in a film thickness direction of the polycrystalline film is higher than a concentration of the metal element in a center region of the aluminum nitride crystal grain in the at least one region, and is higher than a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in a third region located between the first region and the second region in the film thickness direction of the polycrystalline film.