Abstract: A semiconductor memory includes a memory cell region that includes multiple memory cells stacked above a semiconductor substrate, first and second dummy regions on opposite sides of the memory cell region, each dummy region including multiple dummy cells stacked above the semiconductor substrate, and a wiring that electrically connects dummy cells of the first and second dummy regions that are at a same level above the semiconductor substrate.

Abstract: Disclosed is a gas barrier film comprising a substrate film, an organic layer and an inorganic layer provided directly on the surface of the organic layer, wherein the organic layer laid under the inorganic layer has a thickness of from 0.3 ?m to 10 ?m; the organic layer laid under the inorganic layer has a hardness, measured by the nanoindentation, of 0.03 to 0.5 GPa; and the organic layer laid under the inorganic layer, assumed to have a thickness “a”, and the inorganic layer on the organic layer, assumed to have a thickness “b”, satisfying a relation of a/b>10. The gas barrier film is excellent in the barrier performance, adhesiveness, bending resistance and scratch resistance.

Abstract: A substrate and a semiconductor chip are connected by means of flip-chip interconnection. Around connecting pads of the substrate and input/output terminals of the semiconductor chip, an underfill material is injected. The underfill material is a composite material of filler and resin. Also, a first main surface of the substrate, which is not covered with the underfill material, and the side surfaces of the semiconductor chip are encapsulated with a molding material. The molding material is a composite material of filler and resin. An integrated body of the substrate and the semiconductor chip, which are covered with the molding material, is thinned from above and below.

Abstract: A method for counteracting the curling tendency of a gas barrier film having a tendency to curl up with a support side thereof facing inside, comprising (1) heating the gas barrier film from the support side thereof to thereby control the support temperature to fall between Tg and Tg+40° C., and (2) conveying the film in the roller circumferential direction within one second after the temperature of the support has reached Tg, while a part of the gas barrier layer of the gas barrier film is kept in contact with a film surface center part noncontact roller wherein Tg means the glass transition temperature of the support.

Abstract: A substrate and a semiconductor chip are connected by means of flip-chip interconnection. Around connecting pads of the substrate and input/output terminals of the semiconductor chip, an underfill material is injected. The underfill material is a composite material of filler and resin. Also, a first main surface of the substrate, which is not covered with the underfill material, and the side surfaces of the semiconductor chip are encapsulated with a molding material. The molding material is a composite material of filler and resin. An integrated body of the substrate and the semiconductor chip, which are covered with the molding material, is thinned from above and below.

Abstract: Provided is a gas-barrier film having a high barrier property when it is folded. The gas barrier film is characterized in that an organic layer comprises a resin obtained by curing a monomer as a polymerizing ingredient and the monomer has a structure of pentahydric alcohol or more polyhydric alcohol having a molecular weight of from 200 to 800 in which at least 5 hydroxyl groups are substituted with an aliphatic carbonyloxy group of the following general formula (1): wherein R represents a hydrogen atom or a methyl group; L represents a linking group having a chain length of at least 4 atoms; n indicates 0 or 1; provided that at least 3 hydroxyl groups of the polyhydric alcohol are substituted with the aliphatic carbonyloxy group of formula (1), when n =1.

Abstract: A substrate (1) and a semiconductor chip (5) are connected by means of flip-chip interconnection. Around connecting pads (3) of the substrate (1) and input/output terminals (10) of the semiconductor chip (5), an underfill material (7) is injected. The underfill material (7) is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 ?m or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate (1), which is not covered with the underfill material (7), and the side surfaces of the semiconductor chip (5) are encapsulated with a molding material (8). The molding material (8) is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C. An integrated body of the substrate (1) and the semiconductor chip (5), which are covered with the molding material (8), is thinned from above and below.

Abstract: A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula Si3NxOyHz, where 10?(3x+2y)?12, 3.4?x?4.0, 0?y, 0?z<2.0, the peak-area ratio of a first area of a first peak appearing near a wave number of 2150 cm?1 in a Fourier-transform infrared absorption spectrum of the material and corresponding to a Si—H stretching vibration to a second area of a second peak appearing near a wave number of 810 cm?1 in the Fourier-transform infrared absorption spectrum and corresponding to a Si—N stretching vibration is smaller than 0.2, and the silicon-nitrogen compound film has a thickness t (in nanometers) and a density d (g/cm3) which satisfy the inequalities, 1.9?d?2.5, and ?700d+1930?6t??700d+2530.

Abstract: A device having electronic components mounted therein has a first electronic component having an external terminal on a first surface and a heat spreader on a second surface, at least one second electronic component that is placed in the direction of a second surface of the first electronic component, a flexible circuit board that is electrically connected to the first electronic component and at least one second electronic component, and at least the part to which at least one second electronic component is connected is located on the second surface side of the first electronic component, and a spacer that is located between at least part of the flexible circuit board and the second surface of the first electronic component. The spacer can prevent heat from the first electronic component from being directly transferred to the second electronic component.

Abstract: Disclosed is a barrier film capable of maintaining a high water vapor barrier property when folded. The film is characterized in that it has a structure in which an easy adhesive layer, an organic layer and an inorganic layer are laminated in that order on one surface or both surfaces of a plastic film, wherein a center liner average roughness of the surface of the organic layer on the inorganic layer side is at least 0.5 nm, and the organic layer contains a resin which is obtained by curing an acrylic monomer having at least two acryloyl groups and at least two urethane groups in one molecule as a polymerizable component.

Abstract: Disclosed is a gas barrier film comprising a substrate film, an organic layer and an inorganic layer provided directly on the surface of the organic layer, wherein the organic layer laid under the inorganic layer has a thickness of from 0.3 ?m to 10 ?m; the organic layer laid under the inorganic layer has a hardness, measured by the nanoindentation, of 0.03 to 0.5 GPa; and the organic layer laid under the inorganic layer, assumed to have a thickness “a”, and the inorganic layer on the organic layer, assumed to have a thickness “b”, satisfying a relation of a/b>10. The gas barrier film is excellent in the barrier performance, adhesiveness, bending resistance and scratch resistance.

Abstract: A method for counteracting the curling tendency of a gas barrier film having a tendency to curl up with a support side thereof facing inside, comprising (1) heating the gas barrier film from the support side thereof to thereby control the support temperature to fall between Tg and Tg+40° C., and (2) conveying the film in the roller circumferential direction within one second after the temperature of the support has reached Tg, while a part of the gas barrier layer of the gas barrier film is kept in contact with a film surface center part noncontact roller wherein Tg means the glass transition temperature of the support.

Abstract: Electrode pads (5) and a solder resist (7) are disposed on the upper surface of a wiring board (1), and apertures (7a) are formed in the solder resist (7) so as to expose the electrode pads (5). Electrodes (4) are disposed on the lower surface of a semiconductor element (2). Electrodes (4) are connected to the electrode pads (5) by way of bumps (3). An underfill resin (6) is disposed in the area that excludes the solder resist (7) and the bumps (3) in the space between the wiring board (1) and the semiconductor element (2). Between the wiring board (1) and the semiconductor element (2), the thickness (B) of the solder resist (7) is equal to or greater than the thickness (A) of the underfill resin (6) on the solder resist (7). The volume (Vb) of the bumps (3) is less than the volume (Vs) of the apertures (7a).

Abstract: Provided is a gas barrier film excellent in barrier property and flexibility. A gas barrier film comprising a substrate film, a first organic layer, an inorganic layer and an outermost organic layer in that order, wherein the outermost organic layer has a thickness of 0.3 ?m or more, and a/b?2, wherein a represents the thickness of the outermost organic layer, and b represents the thickness of the first organic layer.

Abstract: A substrate (1) and a semiconductor chip (5) are connected by means of flip-chip interconnection. Around connecting pads (3) of the substrate (1) and input/output terminals (10) of the semiconductor chip (5), an underfill material (7) is injected. The underfill material (7) is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 ?m or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate (1), which is not covered with the underfill material (7), and the side surfaces of the semiconductor chip (5) are encapsulated with a molding material (8). The molding material (8) is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C. An integrated body of the substrate (1) and the semiconductor chip (5), which are covered with the molding material (8), is thinned from above and below.

Abstract: A device having electronic components mounted therein has a first electronic component having an external terminal on a first surface and a heat spreader on a second surface, at least one second electronic component that is placed in the direction of a second surface of the first electronic component, a flexible circuit board that is electrically connected to the first electronic component and at least one second electronic component, and at least the part to which at least one second electronic component is connected is located on the second surface side of the first electronic component, and a spacer that is located between at least part of the flexible circuit board and the second surface of the first electronic component. The spacer can prevent heat from the first electronic component from being directly transferred to the second electronic component.

Abstract: The method of depositing a gas barrier layer includes supplying a gas material including silane gas and ammonia gas as and a discharge gas including nitrogen gas as and depositing a silicon nitride film on a substrate using capacitively coupled chemical vapor deposition to form the gas barrier layer on the substrate. A ratio P/Q of RF power P (W) required to form the silicon nitride film to a total gas flow rate Q (sccm) of the silane gas, the ammonia gas and the nitrogen gas is in a range of from 0.4 to 40. The gas barrier film includes the gas barrier layer deposited by the gas barrier layer deposition method. The organic EL device includes the gas barrier film that serves as a sealing film.

Abstract: A silicon-nitrogen compound film according to the first aspect of the present invention is made of a material expressed by a compositional formula Si3NxOyHz, where 10?(3x+2y)?12, 3.4?x?4.0, 0?y, 0?z?2.0, the peak-area ratio of a first area of a first peak appearing near a wave number of 2150 cm?1 in a Fourier-transform infrared absorption spectrum of the material and corresponding to a Si—H stretching vibration to a second area of a second peak appearing near a wave number of 810 cm?1 in the Fourier-transform infrared absorption spectrum and corresponding to a Si—N stretching vibration is smaller than 0.2, and the silicon-nitrogen compound film has a thickness t (in nanometers) and a density d (g/cm3) which satisfy the inequalities, 1.9?d?2.5, and ?700d+1930?6t??700d+2530.

Abstract: Provided is a gas-barrier film having a high barrier property when it is folded. The gas barrier film is characterized in that an organic layer comprises a resin obtained by curing a monomer as a polymerizing ingredient and the monomer has a structure of pentahydric alcohol or more polyhydric alcohol having a molecular weight of from 200 to 800 in which at least 5 hydroxyl groups are substituted with an aliphatic carbonyloxy group of the following general formula (1): wherein R represents a hydrogen atom or a methyl group; L represents a linking group having a chain length of at least 4 atoms; n indicates 0 or 1; provided that at least 3 hydroxyl groups of the polyhydric alcohol are substituted with the aliphatic carbonyloxy group of formula (1), where n=1.

Abstract: Disclosed is a barrier film capable of maintaining a high water vapor barrier property when folded. The film is characterized in that it has a structure in which an easy adhesive layer, an organic layer and an inorganic layer are laminated in that order on one surface or both surfaces of a plastic film, wherein a center liner average roughness of the surface of the organic layer on the inorganic layer side is at least 0.5 nm, and the organic layer contains a resin which is obtained by curing an acrylic monomer having at least two acryloyl groups and at least two urethane groups in one molecule as a polymerizable component.