Abstract: A method with which Mg can be removed from aluminum alloy melt whose raw material is scrap or the like. Metal removal method includes processing step of forming molten salt layer in contact with aluminum alloy melt containing Mg which covers at least part of the surface of the aluminum alloy melt. This method allows Mg to be taken in from aluminum alloy melt to molten salt layer and removed. Molten salt layer contains specific halogen element that is one or more of Cl or Br and specific metal element that is one or more of Cu, Zn, or Mn. The specific metal element is supplied as an oxide of the specific metal element to the molten salt layer. At that time, the molten salt layer contains Mg. The step of removing Mg is performed by disposing a conductor that bridges the aluminum alloy melt and the molten salt layer.

Abstract: A metal removal agent used when removing Mg from an aluminum alloy melt whose raw material is scrap or the like and used for formation of a molten salt layer that takes in Mg from an aluminum alloy melt. The metal removal agent contains: a specific metal element one or more of Cu, Zn, or Mn; a specific halogen element one or more of Cl or Br; and Mg. The metal removal agent may also contain: a base halide that serves as a base material of the molten salt layer; and a specific metal halide that is a compound of a specific metal element and a specific halogen element. When the molten salt layer formed using the agent and the aluminum alloy melt containing Mg are brought into contact with each other, Mg is taken into the molten salt layer side from the aluminum alloy melt side and efficiently removed.

Abstract: A method with which Mg can be removed from aluminum alloy melt whose raw material is scrap or the like. Metal removal method includes processing step of forming molten salt layer in contact with aluminum alloy melt containing Mg which covers at least part of the surface of the aluminum alloy melt. This method allows Mg to be taken in from aluminum alloy melt to molten salt layer and removed. Molten salt layer contains specific halogen element that is one or more of Cl or Br and specific metal element that is one or more of Cu, Zn, or Mn. The specific metal element is supplied as an oxide of the specific metal element to the molten salt layer. At that time, the molten salt layer contains Mg. The step of removing Mg is performed by disposing a conductor that bridges the aluminum alloy melt and the molten salt layer.

Abstract: A recycling method for aluminum alloy is capable of offering a recycled Al alloy (melt), in which the Fe concentration is efficiently reduced, while using Al alloy scrap and the like as raw materials. The method includes: a preparation step of preparing a first melt by melting an Fe.Mn-containing material that contains Fe and Mn and an Al alloy raw material; a crystallization step of holding the first melt at a separation temperature at which an Fe compound crystallizes; and an extraction step of extracting a second melt obtained by removing at least part of the Fe compound crystallized from the first melt. The Fe.Mn-containing material preferably has a mass ratio of Mn to Fe (Mn/Fe) of, for example, 2 or more.

Abstract: A duty compensation circuit including a duty detection circuit, a duty adjustment signal generator for generating a control signal from a detected duty, and a duty adjustment circuit, in which the duty detection circuit executes sampling of a clock at sampling timing obtained by causing the clock to be delayed by a variable delay circuit, thereby detecting a duty. Thereby, duty compensation is enabled without preparing a clock higher in operating speed than a clock before compensation.

Abstract: A duty compensation circuit including a duty detection circuit, a duty adjustment signal generator for generating a control signal from a detected duty, and a duty adjustment circuit, in which the duty detection circuit executes sampling of a clock at sampling timing obtained by causing the clock to be delayed by a variable delay circuit, thereby detecting a duty. Thereby, duty compensation is enabled without preparing a clock higher in operating speed than a clock before compensation.

Abstract: When an optical signal that is a wide dynamic range and different in level depending on burst signals is input as in a GPON system, a preamplifier can stably control the gain within a short preamble. The gain changeover of the preamplifier is controlled by the aid of timing information that is extracted from a data signal as data count number, to change over the gain at a high speed and with high precision. A level detector, a preamble recovery, a counter, and a control circuit are disposed within the preamplifier in addition to a TIA main body. In order to suppress the band deterioration or the phase margin reduction which are attributable to the gain changeover, there is provided a bias terminal for conducting a current injection and a current drawing with respect to the signal amplification transistor of the TIA main body.

Abstract: Operating speed as well as output accuracy of a D-A converter is enhanced. With a semiconductor device including unit current sources, and unit current source switches, plural current source elements constituting each of the unit current sources are disposed so as to be evenly dispersed, thereby reducing errors of the current source element, dependent on distance while the unit current source switches are concentratedly disposed in a small region, thereby mitigating delay in operation, attributable to parasitic capacitance. In addition, with the semiconductor device including R2R resistance ladders, the R2R resistance ladder is provided on the positive and the negative of each of the unit current source switches, and the respective R2R resistance ladders are shorted with each other at respective nodes on a unit current source switch-by-unit current source switch basis, are rendered identical in length, thereby cancelling out a nonlinearity error attributable to wiring parasitic resistance.

Abstract: In a configuration having a nonvolatile memory and a volatile memory, when storage information of the nonvolatile memory is changed and an abnormal operation occurs due to temporary blackout, ?-ray or others, the abnormal operation is recovered to a normal operation regardless of the presence of the detection of the abnormal operation. A reset to be inputted to the nonvolatile memory is collectively transmitted for each 1 bit, each 1 word or each predetermined arbitrary bit, and the collectively transmitted reset serving as one unit is periodically transmitted, so that the abnormal operation is recovered to a normal operation without input signals from outside even if the storage information of the nonvolatile memory is changed due to temporary blackout, ?-ray or others.

Abstract: Operating speed as well as output accuracy of a D-A converter is enhanced. With a semiconductor device including unit current sources, and unit current source switches, plural current source elements constituting each of the unit current sources are disposed so as to be evenly dispersed, thereby reducing errors of the current source element, dependent on distance while the unit current source switches are concentratedly disposed in a small region, thereby mitigating delay in operation, attributable to parasitic capacitance. In addition, with the semiconductor device including R2R resistance ladders, the R2R resistance ladder is provided on the positive and the negative of each of the unit current source switches, and the respective R2R resistance ladders are shorted with each other at respective nodes on a unit current source switch-by-unit current source switch basis, are rendered identical in length, thereby cancelling out a nonlinearity error attributable to wiring parasitic resistance.

Abstract: When an optical signal that is a wide dynamic range and different in level depending on burst signals is input as in a GPON system, a preamplifier can stably control the gain within a short preamble. The gain changeover of the preamplifier is controlled by the aid of timing information that is extracted from a data signal as data count number, to change over the gain at a high speed and with high precision. A level detector, a preamble recovery, a counter, and a control circuit are disposed within the preamplifier in addition to a TIA main body. In order to suppress the band deterioration or the phase margin reduction which are attributable to the gain changeover, there is provided a bias terminal for conducting a current injection and a current drawing with respect to the signal amplification transistor of the TIA main body.

Abstract: In a method of manufacturing a semiconductor device having a first wiring extending in a first direction and a second wiring connected to the first wiring through a connection and extending in a second direction orthogonal to the first direction, the second wiring having a surplus portion projecting from the connection in a direction opposite to the second direction, the first and second wirings are arranged such that a center of the connection is offset in the second direction from a center of the first wiring, and a projecting portion of the first wiring is disposed under the connection.

Abstract: In a method of manufacturing a semiconductor device comprising: having a first wiring extending in a first direction; and a second wiring connected to the first wiring through a connection and extending in a second direction orthogonal to the first direction, the second wiring having a surplus portion projecting from the connection in a direction opposite to the second direction, the first and second wirings are arranged such that a center of the connection is offset in the second direction from a center of the first wiring, and a projecting portion of the first wiring is disposed under the connection.