Patents by Inventor Tomoo Yanase

Tomoo Yanase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4815083
    Abstract: An improved buried heterostructure semiconductor laser comprises high resistive burying layers positioned at both sides of an active region so that the high speed modulation is possible to be performed and the higher quantum efficiency is obtained for the reason why the capacitance and leakage current are diminished. A further improved buried heterostructure semiconductor laser comprises spacer layers between an active region and respective high resistive burying layers so that the reliability is maintained to be high for the reason why the diffusion of an impurity is avoided from the respective high resistive burying layers to the active region.
    Type: Grant
    Filed: June 26, 1986
    Date of Patent: March 21, 1989
    Assignee: NEC Corporation
    Inventors: Shigeo Sugou, Tomoo Yanase
  • Patent number: 4636821
    Abstract: A surface-emitting semiconductor light emitting element, such as a laser or a light emitting diode, having at least one active light emitting layer on a semi-insulating substrate, with p-type and n-type semiconductor regions also on the substrate and in contact with opposite side faces of the active layer. The active layer has a narrower band gap than the semiconductor regions. The light emitting region may comprise a multilayer structure of plural active light emitting layers sandwiched between alternating p-type and n-type semiconductor layers.
    Type: Grant
    Filed: February 21, 1984
    Date of Patent: January 13, 1987
    Assignee: NEC Corporation
    Inventors: Tomoo Yanase, Hiroyoshi Rangu
  • Patent number: 4629532
    Abstract: A method of growing an InGaAsP layer on a corrugated InP substrate as a part of a procedure for producing a DFB semiconductor laser includes the step of heating the substrate up to temperatures approaching 700.degree. C. while holding the substrate in an atmosphere which contains arsine and phosphine. The substrate is subsequently moved to InGaAsP and InP growth chambers for growth of these respective layers. The method of the invention is advantageous in that the corrugated structure of the substrate is maintained intact throughout the procedure.
    Type: Grant
    Filed: July 25, 1984
    Date of Patent: December 16, 1986
    Assignee: NEC Corporation
    Inventors: Tomoo Yanase, Ikuo Mito
  • Patent number: 4378986
    Abstract: A method of manufacturing optical fibers by applying to a substantially cylindrical thin glass member layers of porous glass having a radially varying composition by means of pulverized glass generators. The porous glass layers are heated and defoamed to form a transparent glass preform containing the thin glass member which preform is heated and drawn to reduce the cross-sectional area to form an optical fiber.
    Type: Grant
    Filed: June 30, 1981
    Date of Patent: April 5, 1983
    Assignee: Nippon Electric Co., Ltd.
    Inventors: Tomoo Yanase, Motohiro Arai