Patents by Inventor Tomos THOMAS

Tomos THOMAS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190252567
    Abstract: A photovoltaic diode comprising an emitter layer of doped Group III-V semiconductor material, having a first conductivity type and a first bandgap in at least part of the layer, an intrinsic layer of dilute nitride Group III-V semiconductor material having a composition given by the formula Ga1-zInzNxAsySb1-x-y, where 0<z<0.20, 0.01<x<0.05, and y>0.80 having a second bandgap, a base layer of semiconductor material having a third bandgap and a second conductivity type opposite to the first conductivity type. The emitter, intrinsic and base layers form a diode junction. The first bandgap is greater than the second bandgap.
    Type: Application
    Filed: April 24, 2019
    Publication date: August 15, 2019
    Inventors: Soon Fatt YOON, Kian Hua TAN, Wan Khai LOKE, Satrio WICAKSONO, Nicholas EKINS-DAUKES, Tomos THOMAS, Andrew David JOHNSON