Patents by Inventor Tomoshige Chikai
Tomoshige Chikai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10236231Abstract: A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.Type: GrantFiled: June 30, 2017Date of Patent: March 19, 2019Assignee: J-DEVICES CORPORATIONInventors: Takeshi Miyakoshi, Sumikazu Hosoyamada, Yoshikazu Kumagaya, Tomoshige Chikai, Shingo Nakamura, Hiroaki Matsubara, Shotaro Sakumoto
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Patent number: 10134710Abstract: A stacked semiconductor package in an embodiment includes a first semiconductor package including a first circuit board and a first semiconductor element mounted on the first circuit board; and a second semiconductor package including a second circuit board and a second semiconductor element mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package. The first semiconductor package further includes a sealing resin sealing the first semiconductor element; a conductive layer located in contact with the sealing resin; and a thermal via connected to the conductive layer and located on the first circuit board.Type: GrantFiled: February 2, 2017Date of Patent: November 20, 2018Assignee: J-DEVICES CORPORATIONInventors: Takeshi Miyakoshi, Sumikazu Hosoyamada, Yoshikazu Kumagaya, Tomoshige Chikai, Shingo Nakamura, Hiroaki Matsubara, Shotaro Sakumoto
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Patent number: 9922931Abstract: An interconnect structure in which the current capacity of an interconnect pattern involving a large amount of current is increased without preventing the miniaturization of signal lines and increasing the film thickness. The interconnect structure includes a resin layer; and interconnects formed on the resin layer, wherein the resin layer has a plurality of parallel grooves in an area in which the interconnects are formed, and the interconnects are formed of a plating film created on a resin layer front surface in the area, in which the interconnects are formed, and on inner wall surfaces of the plurality of grooves.Type: GrantFiled: January 30, 2017Date of Patent: March 20, 2018Assignee: J-DEVICES CORPORATIONInventors: Hiroaki Matsubara, Tomoshige Chikai, Naoki Hayashi, Toshihiro Iwasaki
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Publication number: 20170301599Abstract: A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.Type: ApplicationFiled: June 30, 2017Publication date: October 19, 2017Applicant: J-DEVICES CORPORATIONInventors: Takeshi MIYAKOSHI, Sumikazu HOSOYAMADA, Yoshikazu KUMAGAYA, Tomoshige CHIKAI, Shingo NAKAMURA, Hiroaki MATSUBARA, Shotaro SAKUMOTO
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Publication number: 20170263560Abstract: An object of the present invention is to provide an interconnect structure in which the current capacity of an interconnect pattern involving a large amount of current is increased without preventing miniaturization of signal lines and increasing film thickness. To accomplish this object, the present invention is configured as an interconnect structure including a resin layer; and interconnects formed on the resin layer, wherein the resin layer has a plurality of parallel grooves in an area in which the interconnects are formed, and the interconnects are formed of a plating film created on a resin layer front surface in the area, in which the interconnects are formed, and on inner wall surfaces of the plurality of grooves.Type: ApplicationFiled: January 30, 2017Publication date: September 14, 2017Inventors: Hiroaki MATSUBARA, Tomoshige CHIKAI, Naoki HAYASHI, Toshihiro IWASAKI
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Publication number: 20170148766Abstract: A stacked semiconductor package in an embodiment includes a first semiconductor package including a first circuit board and a first semiconductor element mounted on the first circuit board; and a second semiconductor package including a second circuit board and a second semiconductor element mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package. The first semiconductor package further includes a sealing resin sealing the first semiconductor element; a conductive layer located in contact with the sealing resin; and a thermal via connected to the conductive layer and located on the first circuit board.Type: ApplicationFiled: February 2, 2017Publication date: May 25, 2017Applicant: J-DEVICES CORPORATIONInventors: Takeshi MIYAKOSHI, Sumikazu HOSOYAMADA, Yoshikazu KUMAGAYA, Tomoshige CHIKAI, Shingo NAKAMURA, Hiroaki MATSUBARA, Shotaro SAKUMOTO
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Patent number: 9635762Abstract: A stacked semiconductor package includes a first semiconductor package including a first circuit board and a first semiconductor device mounted on the first circuit board; a second semiconductor package including a second circuit board and a second semiconductor device mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package; and a heat transfer member provided on the first semiconductor device and a part of the first circuit board, the part being around the first semiconductor device.Type: GrantFiled: July 20, 2015Date of Patent: April 25, 2017Assignee: J-DEVICES CORPORATIONInventors: Shinji Watanabe, Sumikazu Hosoyamada, Shingo Nakamura, Hiroshi Demachi, Takeshi Miyakoshi, Tomoshige Chikai, Kiminori Ishido, Hiroaki Matsubara, Takashi Nakamura, Hirokazu Honda, Yoshikazu Kumagaya, Shotaro Sakumoto, Toshihiro Iwasaki, Michiaki Tamakawa
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Patent number: 9601450Abstract: A stacked semiconductor package in an embodiment includes a first semiconductor package including a first circuit board and a first semiconductor element mounted on the first circuit board; and a second semiconductor package including a second circuit board and a second semiconductor element mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package. The first semiconductor package further includes a sealing resin sealing the first semiconductor element; a conductive layer located in contact with the sealing resin; and a thermal via connected to the conductive layer and located on the first circuit board.Type: GrantFiled: March 26, 2015Date of Patent: March 21, 2017Assignee: J-DEVICES CORPORATIONInventors: Takeshi Miyakoshi, Sumikazu Hosoyamada, Yoshikazu Kumagaya, Tomoshige Chikai, Shingo Nakamura, Hiroaki Matsubara, Shotaro Sakumoto
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Patent number: 9553052Abstract: A magnetic shielding package of a non-volatile magnetic memory element, including: a soft magnetic material support plate 12; a first insulating material layer 13 formed on the support plate; a non-volatile magnetic memory element 11 fixed on the first insulating material layer; a second insulating material layer 14 that encapsulates the memory element and the periphery thereof; in the second insulating material layer, a wiring layer 15, a soft magnetic layer 15b or 25 and a conductive portion 16 connecting an electrode of the circuit surface of the memory element and the wiring layer; and a magnetic shield part 17 containing a soft magnetic material arranged like a wall at a distance from a side surface of the memory element so as to surround the memory element side surface partially or entirely, the magnetic shield part being magnetically connected to the soft magnetic layer.Type: GrantFiled: December 9, 2015Date of Patent: January 24, 2017Assignee: J-DEVICES CORPORATIONInventors: Hiroaki Matsubara, Toshihiro Iwasaki, Tomoshige Chikai, Kiminori Ishido, Shinji Watanabe, Michiaki Tamakawa
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Publication number: 20160172580Abstract: A magnetic shielding package of a non-volatile magnetic memory element, including: a soft magnetic material support plate 12; a first insulating material layer 13 formed on the support plate; a non-volatile magnetic memory element 11 fixed on the first insulating material layer; a second insulating material layer 14 that encapsulates the memory element and the periphery thereof; in the second insulating material layer, a wiring layer 15, a soft magnetic layer 15b or 25 and a conductive portion 16 connecting an electrode of the circuit surface of the memory element and the wiring layer; and a magnetic shield part 17 containing a soft magnetic material arranged like a wall with a distance from a side surface of the memory element so as to surround the memory element side surface partially or entirely, the magnetic shield part being magnetically connected to the soft magnetic layer.Type: ApplicationFiled: December 9, 2015Publication date: June 16, 2016Inventors: Hiroaki MATSUBARA, Toshihiro IWASAKI, Tomoshige CHIKAI, Kiminori ISHIDO, Shinji WATANABE, Michiaki TAMAKAWA
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Patent number: 9368474Abstract: A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; filling a gap between the semiconductor wafer and the semiconductor chip with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip; forming a line on the first insulating layer connected with a conductive material filled an opening in the first insulating layer and the second insulating resin layer to expose the electrode; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thicknType: GrantFiled: September 10, 2015Date of Patent: June 14, 2016Assignee: J-DEVICES CORPORATIONInventors: Hiroaki Matsubara, Tomoshige Chikai, Kiminori Ishido, Takashi Nakamura, Hirokazu Honda, Hiroshi Demachi, Yoshikazu Kumagaya, Shotaro Sakumoto, Shinji Watanabe, Sumikazu Hosoyamada, Shingo Nakamura, Takeshi Miyakoshi, Toshihiro Iwasaki, Michiaki Tamakawa
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Patent number: 9362200Abstract: A semiconductor package includes a support substrate arranged with a first aperture reaching a semiconductor device on a rear side, the semiconductor device is bonded via an adhesive to a surface of the support substrate, an insulating layer covering the semiconductor device, and wiring for connecting the semiconductor device and an external terminal through the insulating layer. The adhesive may form a part of the first aperture. In addition, a heat dissipation part may be arranged in the first aperture and a metal material may be filled in the first aperture.Type: GrantFiled: June 19, 2015Date of Patent: June 7, 2016Assignee: J-DEVICES CORPORATIONInventors: Hirokazu Honda, Shinji Watanabe, Toshihiro Iwasaki, Kiminori Ishido, Koichiro Niwa, Takeshi Miyakoshi, Sumikazu Hosoyamada, Yoshikazu Kumagaya, Tomoshige Chikai, Shingo Nakamura, Shotaro Sakumoto, Hiroaki Matsubara
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Publication number: 20160079204Abstract: A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; filling a gap between the semiconductor wafer and the semiconductor chip with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip; forming a line on the first insulating layer connected with a conductive material filled an opening in the first insulating layer and the second insulating resin layer to expose the electrode; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thicknType: ApplicationFiled: September 10, 2015Publication date: March 17, 2016Inventors: Hiroaki Matsubara, Tomoshige Chikai, Kiminori Ishido, Takashi Nakamura, Hirokazu Honda, Hiroshi Demachi, Yoshikazu Kumagaya, Shotaro Sakumoto, Shinji Watanabe, Sumikazu Hosoyamada, Shingo Nakamura, Takeshi Miyakoshi, Toshihiro Iwasaki, Michiaki Tamakawa
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Publication number: 20160027715Abstract: A stacked semiconductor package includes a first semiconductor package including a first circuit board and a first semiconductor device mounted on the first circuit board; a second semiconductor package including a second circuit board and a second semiconductor device mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package; and a heat transfer member provided on the first semiconductor device and a part of the first circuit board, the part being around the first semiconductor device.Type: ApplicationFiled: July 20, 2015Publication date: January 28, 2016Inventors: Shinji WATANABE, Sumikazu HOSOYAMADA, Shingo NAKAMURA, Hiroshi DEMACHI, Takeshi MIYAKOSHI, Tomoshige CHIKAI, Kiminori ISHIDO, Hiroaki MATSUBARA, Takashi NAKAMURA, Hirokazu HONDA, Yoshikazu KUMAGAYA, Shotaro SAKUMOTO, Toshihiro IWASAKI, Michiaki TAMAKAWA
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Publication number: 20150371934Abstract: A semiconductor package includes a support substrate arranged with a first aperture reaching a semiconductor device on a rear side, the semiconductor device is bonded via an adhesive to a surface of the support substrate, an insulating layer covering the semiconductor device, and wiring for connecting the semiconductor device and an external terminal through the insulating layer. The adhesive may form a part of the first aperture. In addition, a heat dissipation part may be arranged in the first aperture and a metal material may be filled in the first aperture.Type: ApplicationFiled: June 19, 2015Publication date: December 24, 2015Inventors: Hirokazu HONDA, Shinji WATANABE, Toshihiro IWASAKI, Kiminori ISHIDO, Koichiro NIWA, Takeshi MIYAKOSHI, Sumikazu HOSOYAMADA, Yoshikazu KUMAGAYA, Tomoshige CHIKAI, Shingo NAKAMURA, Shotaro SAKUMOTO, Hiroaki MATSUBARA
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Publication number: 20150279759Abstract: A stacked semiconductor package in an embodiment includes a first semiconductor package including a first circuit board and a first semiconductor element mounted on the first circuit board; and a second semiconductor package including a second circuit board and a second semiconductor element mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package. The first semiconductor package further includes a sealing resin sealing the first semiconductor element; a conductive layer located in contact with the sealing resin; and a thermal via connected to the conductive layer and located on the first circuit board.Type: ApplicationFiled: March 26, 2015Publication date: October 1, 2015Applicant: J-DEVICES CORPORATIONInventors: Takeshi Miyakoshi, Sumikazu HOSOYAMADA, Yoshikazu KUMAGAYA, Tomoshige CHIKAI, Shingo NAKAMURA, Hiroaki MATSUBARA, Shotaro SAKUMOTO
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Publication number: 20150243576Abstract: A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.Type: ApplicationFiled: February 12, 2015Publication date: August 27, 2015Applicant: J-DEVICES CORPORATIONInventors: Takeshi MIYAKOSHI, Sumikazu HOSOYAMADA, Yoshikazu KUMAGAYA, Tomoshige CHIKAI, Shingo NAKAMURA, Hiroaki MATSUBARA
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Patent number: 8872350Abstract: A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.Type: GrantFiled: September 14, 2012Date of Patent: October 28, 2014Assignee: J-Devices CorporationInventors: Shigenori Sawachi, Osamu Yamagata, Hiroshi Inoue, Satoru Itakura, Tomoshige Chikai, Masahiko Hori, Akio Katsumata
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Patent number: 8786110Abstract: A semiconductor device comprising a support plate, a semiconductor element mounted on the support plate and including a circuit element surface having a plurality of first electrodes, a first insulation layer covering the circuit element surface of the semiconductor element, and including a plurality of first apertures exposing the plurality of first electrodes, a second insulation layer covering an upper part of the support plate and side parts of the semiconductor element, and wirings formed on an upper part of the first insulation layer and on an upper part of the second insulation layer, and electrically connected to the corresponding first electrodes.Type: GrantFiled: March 30, 2011Date of Patent: July 22, 2014Assignee: J-Devices CorporationInventors: Hisakazu Marutani, Yasunari Iwami, Tomoshige Chikai, Tomoko Takahashi, Osamu Yamagata, Shingo Mitsugi, Chunghao Chen
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Publication number: 20130200523Abstract: A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.Type: ApplicationFiled: September 14, 2012Publication date: August 8, 2013Inventors: Shigenori SAWACHI, Osamu Yamagata, Hiroshi Inoue, Satoru Itakura, Tomoshige Chikai, Masahiko Hori, Akio Katsumata