Patents by Inventor Tomoshige YUNOKUCHI

Tomoshige YUNOKUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS
    Publication number: 20200409263
    Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.
    Type: Application
    Filed: September 11, 2020
    Publication date: December 31, 2020
    Applicant: ASAHI KASEI KABUSHIKI KAISHA
    Inventors: Tomohiro YORISUE, Taihei INOUE, Yoshito IDO, Mitsutaka NAKAMURA, Tomoshige YUNOKUCHI, Daisuke SASANO, Takahiro SASAKI
  • Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus
    Patent number: 10831101
    Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.
    Type: Grant
    Filed: March 28, 2017
    Date of Patent: November 10, 2020
    Assignee: ASAHI KASEI KABUSHIKI KAISHA
    Inventors: Tomohiro Yorisue, Taihei Inoue, Yoshito Ido, Mitsutaka Nakamura, Tomoshige Yunokuchi, Daisuke Sasano, Takahiro Sasaki
  • Semiconductor device including semiconductor element and redistribution layer electrically connected thereto, and method of manufacturing the device
    Patent number: 10354932
    Abstract: It is an object to particularly improve compositions of interlayer insulation films so as to provide semiconductor devices which exert high elongation percentage, are excellent in adherence and are hard to generate a crack, and methods of manufacturing the devices, and a semiconductor device (1) of the present invention is a semiconductor device provided with a semiconductor element (2) and a redistribution layer (4) electrically connected to the semiconductor element, and is characterized in that a solvent with specific gravity of 0.96 g/cm3 or more at a temperature of 25° C. remains in an amount of 5 ppm or more relative to the entire weight of an interlayer insulation film (6) inside the interlayer insulation film of the redistribution layer. According to the semiconductor device of the present invention, it is possible to exert high elongation percentage, provide excellent adherence, and suppress generation of a crack.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: July 16, 2019
    Assignee: ASAHI KASEI KABUSHIKI KAISHA
    Inventor: Tomoshige Yunokuchi
  • PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS
    Publication number: 20190113845
    Abstract: A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.
    Type: Application
    Filed: March 28, 2017
    Publication date: April 18, 2019
    Applicants: ASAHI KASEI KABUSHIKI KAISHA, ASAHI KASEI KABUSHIKI KAISHA
    Inventors: Tomohiro YORISUE, Taihei INOUE, Yoshito IDO, Mitsutaka NAKAMURA, Tomoshige YUNOKUCHI, Daisuke SASANO, Takahiro SASAKI
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE
    Publication number: 20180342432
    Abstract: It is an object to particularly improve compositions of interlayer insulation films so as to provide semiconductor devices which exert high elongation percentage, are excellent in adherence and are hard to generate a crack, and methods of manufacturing the devices, and a semiconductor device (1) of the present invention is a semiconductor device provided with a semiconductor element (2) and a redistribution layer (4) electrically connected to the semiconductor element, and is characterized in that a solvent with specific gravity of 0.96 g/cm3 or more at a temperature of 25° C. remains in an amount of 5 ppm or more relative to the entire weight of an interlayer insulation film (6) inside the interlayer insulation film of the redistribution layer. According to the semiconductor device of the present invention, it is possible to exert high elongation percentage, provide excellent adherence, and suppress generation of a crack.
    Type: Application
    Filed: March 14, 2018
    Publication date: November 29, 2018
    Applicant: ASAHI KASEI KABUSHIKI KAISHA
    Inventor: Tomoshige YUNOKUCHI