Abstract: Copper sulfate which includes a Fe with a concentration of 0.08 ppm by mass or less.

Abstract: Copper sulfate which includes a Fe with a concentration of 0.08 ppm by mass or less.

Abstract: A carrier-attached copper foil having good circuit formability is provided. The carrier-attached copper foil has a carrier, an intermediate layer and an ultra-thin copper layer in this order, the average grain size of crystal grains that form the ultra-thin copper layer is 1.05 to 6.5 ?m, and a ten point average roughness Rz of a surface on a side of the ultra-thin copper layer is 0.1 to 2.0 ?m.

Abstract: A carrier-attached copper foil having satisfactory circuit formability on the ultra-thin copper layer surface is provided. The carrier-attached copper foil has a carrier, an intermediate layer and an ultra-thin copper layer in this order. The ultra-thin copper layer surface has an absorbance of light at a wavelength of 400 nm is 85% or more.

Abstract: Provided is a copper foil provided with a carrier which enables to form an extremely fine circuit and to suppress the disconnection of a circuit well. A copper foil provided with a carrier having, in order, an intermediate layer and an ultrathin copper layer on one side or both sides of the carrier, wherein the ultrathin copper layer is an electrolytic copper layer; and the thickness of the ultrathin copper layer measured by using a gravimetric method is 1.5 ?m or less and the number of pinholes in the ultrathin copper layer is 0 pinholes/m2 or more and 5 pinholes/m2 or less.

Abstract: A carrier-attached copper foil having good circuit formability is provided. The carrier-attached copper foil has a carrier, an intermediate layer and an ultra-thin copper layer in this order, the number of crystal grains per unit cross-sectional area of the ultra-thin copper layer in the through-thickness direction is 0.1 to 5 grains/?m2, and a ten point average roughness Rz of a surface on a side of the ultra-thin copper layer is 0.1 to 2.0 ?m.

Abstract: Copper sulfate which includes a Fe with a concentration of 0.08 ppm by mass or less.

Abstract: Copper sulfate which includes an Al with a concentration of 0.08 ppm by mass or less.

Abstract: The present invention provides a carrier-attached copper foil, wherein an ultrathin copper foil is not peeled from the carrier prior to the lamination to an insulating substrate, but can be peeled from the carrier after the lamination to the insulating substrate. A carrier-attached copper foil comprising a copper foil carrier, an intermediate layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the intermediate layer, wherein the intermediate foil is configured with a Ni layer in contact with an interface of the copper foil carrier and a Cr layer in contact with an interface of the ultrathin copper layer, said Ni layer containing 1,000-40,000 ?g/dm2 of Ni and said Cr layer containing 10-100 ?g/dm2 of Cr is provided.

Abstract: Provided is a copper foil for a printed wiring board including a roughened layer on at least one surface thereof. In the roughened layer, the average diameter D1 at the particle bottom being apart from the bottom of each particle by 10% of the particle length is 0.2 to 1.0 ?m, and the ratio L1/D1 of the particle length L1 to the average diameter D1 at the particle bottom is 15 or less. In the copper foil for printed wiring board, when a copper foil for printed wiring having a roughened layer is laminated to a resin and then the copper layer is removed by etching, the sum of areas of holes accounting for the resin roughened surface having unevenness is 20% or more. The present invention involves the development of a copper foil for a semiconductor package substrate that can avoid circuit erosion without causing deterioration in other properties of the copper foil.

Abstract: Provided is a copper foil for a printed wiring board including a roughened layer on at least one surface thereof. In the roughened layer, the average diameter D1 at the particle bottom being apart from the bottom of each particle by 10% of the particle length is 0.2 to 1.0 ?m, and the ratio L1/D1 of the particle length L1 to the average diameter D1 at the particle bottom is 15 or less. In the copper foil for printed wiring board, when a copper foil for printed wiring having a roughened layer is laminated to a resin and then the copper layer is removed by etching, the sum of areas of holes accounting for the resin roughened surface having unevenness is 20% or more. The present invention involves the development of a copper foil for a semiconductor package substrate that can avoid circuit erosion without causing deterioration in other properties of the copper foil.

Abstract: A carrier-attached copper foil having good circuit formability is provided. The carrier-attached copper foil has a carrier, an intermediate layer and an ultra-thin copper layer in this order, the average grain size of crystal grains that form the ultra-thin copper layer is 1.05 to 6.5 ?m, and a ten point average roughness Rz of a surface on a side of the ultra-thin copper layer is 0.1 to 2.0 ?m.

Abstract: A carrier-attached copper foil having good circuit formability is provided. The carrier-attached copper foil has a carrier, an intermediate layer and an ultra-thin copper layer in this order, the number of crystal grains per unit cross-sectional area of the ultra-thin copper layer in the through-thickness direction is 0.1 to 5 grains/?m2, and a ten point average roughness Rz of a surface on a side of the ultra-thin copper layer is 0.1 to 2.0 ?m.

Abstract: The present invention provides a copper foil with a carrier including an ultra-thin copper layer having a thickness of 0.9 ?m or less and capable of preferably preventing generation of pin holes during peeling of the carrier. A copper foil with a carrier including a carrier, an intermediate layer, and an ultra-thin copper layer in this order, wherein the ultra-thin copper layer has a thickness of 0.9 ?m or less, the surface close to the ultra-thin copper layer of the carrier has an arithmetic average roughness Ra of 0.3 ?m or less, as measured with a laser microscope according to JIS B0601-1994, and the releasing strength during peeling of the carrier by a 90° releasing method according to JIS C 6471 8.1 is 20 N/m or less.

Abstract: The present invention provides a copper foil with a carrier including an ultra-thin copper layer having a thickness of 0.9 ?m or less and capable of preferably preventing generation of pin holes during peeling of the carrier. A copper foil with a carrier including a carrier, an intermediate layer, and an ultra-thin copper layer in this order, wherein the ultra-thin copper layer has a thickness of 0.9 ?m or less, and the releasing strength during peeling of the carrier by a 90° releasing method according to JIS C 6471 8.1 is 10 N/m or less.

Abstract: The present invention provides a copper foil with a carrier having a small absolute value of the difference in releasing strength between the copper foil with a carrier prepared by laminating and hot-pressing the surface close to an ultra-thin copper layer of the copper foil with a carrier to an insulating substrate and used after the carrier is peeled off and the copper foil with a carrier prepared by laminating and hot-pressing the surface close to the carrier of the copper foil with a carrier to an insulating substrate and used after the ultra-thin copper layer is peeled off, while generation of swelling during laminating of the copper foil with a carrier to the insulating substrate by hot pressing is prevented, discoloring of the surface of the ultra-thin copper layer due to oxidation is prevented, and the circuit formability is high.

Abstract: A carrier-attached copper foil having satisfactory circuit formability on the ultra-thin copper layer surface is provided. The carrier-attached copper foil has a carrier, an intermediate layer and an ultra-thin copper layer in this order. The ultra-thin copper layer surface has an absorbance of light at a wavelength of 400 nm is 85% or more.

Abstract: Provided is a copper foil for a printed wiring board including a roughened layer on at least one surface thereof. In the roughened layer, the average diameter D1 at the particle bottom being apart from the bottom of each particle by 10% of the particle length is 0.2 to 1.0 ?m, and the ratio L1/D1 of the particle length L1 to the average diameter D1 at the particle bottom is 15 or less. In the copper foil for printed wiring board, when a copper foil for printed wiring having a roughened layer is laminated to a resin and then the copper layer is removed by etching, the sum of areas of holes accounting for the resin roughened surface having unevenness is 20% or more. The present invention involves the development of a copper foil for a semiconductor package substrate that can avoid circuit erosion without causing deterioration in other properties of the copper foil.

Abstract: Provided is a copper foil provided with a carrier which enables to form an extremely fine circuit and to suppress the disconnection of a circuit well. A copper foil provided with a carrier having, in order, an intermediate layer and an ultrathin copper layer on one side or both sides of the carrier, wherein the ultrathin copper layer is an electrolytic copper layer; and the thickness of the ultrathin copper layer measured by using a gravimetric method is 1.5 ?m or less and the number of pinholes in the ultrathin copper layer is 0 pinholes/m2 or more and 5 pinholes/m2 or less.

Abstract: The present invention provides a carrier-attached copper foil, wherein an ultrathin copper foil is not peeled from the carrier prior to the lamination to an insulating substrate, but can be peeled from the carrier after the lamination to the insulating substrate. A carrier-attached copper foil comprising a copper foil carrier, an intermediate layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the intermediate layer, wherein the intermediate foil is configured with a Ni layer in contact with an interface of the copper foil carrier and a Cr layer in contact with an interface of the ultrathin copper layer, said Ni layer containing 1,000-40,000 ?g/dm2 of Ni and said Cr layer containing 10-100 ?g/dm2 of Cr is provided.