Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A resist underlayer film-forming composition includes a solvent and a polymer having a unit structure represented by formula (I): (in formula (I), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, a methyl group, or an ethyl group, Q1 represents a divalent organic group, R1 represents a tetravalent organic group including a C6-40 aromatic ring structure, and L1 and L2 each independently represent a hydrogen atom or a C1-10 alkyl group optionally substituted with a hydroxy group and optionally interrupted by an oxygen atom).

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. (In formula (1), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, methyl group, or ethyl group; Q1 represents a divalent organic group; R1 represents a tetravalent organic group; and R2 represents an alkenyl group or alkynyl group having 2-10 carbon atoms.) The film-forming composition contains a solvent and a polymer that has a unit structure given by formula (1).

Abstract: A step substrate coating composition for efficiently forming a coating that is capable of filling and flattening a pattern. A step substrate coating composition comprising a compound (A) of a main agent, a crosslinking agent, and a solvent, the compound (A) including a partial structure expressed by formula (A-1) (where the broken line represents bonding with an aromatic ring, the aromatic ring forming a polymer skeleton or a monomer, and n represents an integer of 1-4).

Abstract: A composition for forming a resist underlayer film and a method for producing a resist pattern, the method using the composition for forming a resist underlayer film; and a method for producing a semiconductor device. A resist underlayer film-forming composition which contains an organic solvent and a polymer that has an end blocked with a compound (A), wherein: the polymer is derived from compound (B) that is represented by formula (11). (In formula (11), Y1 represents a single bond, an oxygen atom, a sulfur atom, an alkylene group having from 1 to 10 carbon atoms, the alkylene group being optionally substituted by a halogen atom or an aryl group having from 6 to 40 carbon atoms, or a sulfonyl group; each of T1 and T2 represents an alkyl group having from 1 to 10 carbon atoms; and each of n1 and n2 independently represents an integer from 0 to 4.

Abstract: A composition for forming a resist underlayer film which enables to form a flat film with a favorable coating even on a so-called stepped substrate and a small film thickness difference after embedding, and also a polymer as an important component of the composition for forming a resist underlayer film, a resist underlayer film formed using the composition for forming a resist underlayer film, and a method of producing a semiconductor device. The composition for forming a resist underlayer film, includes a compound of the following Formula (1) and a solvent: (wherein, Ar1, Ar2, Ar3 and Ar4 are each independently a substitutable monovalent aromatic hydrocarbon group, a, b, c, and d are each 0 or 1, and a+b+c+d=1).

Abstract: A resist underlayer film forming composition wherein a flat film forms exhibiting high etching resistance, a good dry etching rate ratio and optical constant, has good coverage, and a small difference in film thickness after embedding. Also included are a resist underlayer film using the resist underlayer film forming composition; and a method for producing a semiconductor apparatus. This resist underlayer film forming composition includes: at least one compound of formula (A); at least one polymer of formula (B); and a solvent. (In formula (A), X represents a C2-C50 n-valent organic group, and n Y's represent a C6-C60 aromatic hydrocarbon group having at least one hydroxyl group, n represents an integer of 1-4.) [In formula (B), R1 represents a hydrogen atom or methyl group, and R2 represents at least one group from formulae (B-1) to (B-3). (In formulae (B-1) to (B-3), * represents a bond with an adjacent oxygen atom.

Abstract: A composition for forming a resist underlayer film includes: (A) a cross-linking compound that is represented by formula (I); and (D) a solvent. [In formula (I), m is an integer from 1 to 30, T is a single bond, a saturated hydrocarbon group, an aromatic group, or an unsaturated cyclic hydrocarbon group, G1, G2, G3, G4, G5, and G6 are each independently (i) or (ii), the n's are each independently an integer from 1 to 8, the n R's are each independently a hydrogen atom, an aliphatic hydrocarbon group, or an alicyclic hydrocarbon group, the A's are each independently an aryl group that may be interrupted by an alkylene group, and Z1, Z2, Z3, Z4, Z5, and Z6 are each independently an alkyl group, an aryl group, a hydroxy group, an epoxy group, or a hydrogen atom.

Abstract: A resist underlayer film-forming composition including: a resin having a repeating structural unit including at least one —C(?O)—O— group in a main chain and a repeating structural unit including at least one hydroxy group in a side chain, or including at least one —C(?O)—O— group in a main chain and at least one hydroxy group in a side chain, wherein none of these units have an organic group containing an epoxy or oxetane ring; an acid catalyst or salt thereof in an amount of 0.1 to 10 parts by mass relative to 100 parts by mass of the resin, when the catalyst is a monovalent acid, an acid dissociation constant pKa is ?0.5 or less in 25° C. water, or when a multivalent acid, an acid dissociation constant pKa1 is ?0.5 or less in 25° C. water; and a solvent, wherein the composition does not include a monomer crosslinking agent.