Abstract: An exposure mask used to transfer a pattern defined by exposure onto a wafer, includes: a substrate; a pattern formation region provided on the substrate, and having pattern elements formed therein, the pattern elements having a size not smaller than a resolution limit after being transferred onto the wafer; and a sub-pattern formation region provided on the substrate and having sub-pattern elements formed therein. The sub-pattern element has a size smaller than the resolution limit after being transferred onto the wafer, and the sub-pattern formation region is spaced from the pattern formation region by a distance having no optical proximity effect on the pattern.

Abstract: According to one embodiment, a mask used with an exposure apparatus is disclosed. The mask includes a main pattern, and a sub-pattern having a dimension smaller than a resolution limit of the exposure apparatus. The sub-pattern is arranged next to the main pattern. The sub-pattern includes a first sub-pattern arranged next to the main pattern, and second sub-patterns contacting the first sub-pattern and arranged along a longitudinal direction of the first sub-pattern. The sub-patterns satisfy a condition of P??/(NA(1+?0)). Where P is a pitch of the second sub-patterns, NA is a numerical aperture of the exposure apparatus, ? and ?0 are respectively exposure wave length and maximum ? when the main pattern by using the exposure apparatus.

Abstract: According to one embodiment, a mask used with an exposure apparatus is disclosed. The mask includes a main pattern, and a sub-pattern having a dimension smaller than a resolution limit of the exposure apparatus. The sub-pattern is arranged next to the main pattern. The sub-pattern includes a first sub-pattern arranged next to the main pattern, and second sub-patterns contacting the first sub-pattern and arranged along a longitudinal direction of the first sub-pattern. The sub-patterns satisfy a condition of P??/(NA(1+?0)). Where P is a pitch of the second sub-patterns, NA is a numerical aperture of the exposure apparatus, ? and ?0 are respectively exposure wave length and maximum ? when the main pattern by using the exposure apparatus.

Abstract: An exposure mask used to transfer a pattern defined by exposure onto a wafer, includes: a substrate; a pattern formation region provided on the substrate, and having pattern elements formed therein, the pattern elements having a size not smaller than a resolution limit after being transferred onto the wafer; and a sub-pattern formation region provided on the substrate and having sub-pattern elements formed therein. The sub-pattern element has a size smaller than the resolution limit after being transferred onto the wafer, and the sub-pattern formation region is spaced from the pattern formation region by a distance having no optical proximity effect on the pattern.

Abstract: Method of forming a pattern on a semiconductor wafer, the temperature of the semiconductor wafer being detected by a thermocouple. When the detected temperature is at a specified value which indicates that the deformation of the semiconductor wafer is within an allowable range, a step of forming a pattern on the semiconductor wafer is performed. This forming method improves the accuracy in forming the pattern. Also, in a method of inspecting a pattern on a semiconductor wafer, the temperature of the semiconductor wafer is detected using a thermocouple. When the detected temperature is at a specified value which indicates that the deformation of the semiconductor wafer is within an allowable range, a step of inspecting a pattern on the semiconductor wafer is performed. This inspecting method improves the accuracy in inspecting the pattern.