Abstract: A thin film semiconductor device includes a substrate and a semiconductor film formed on the substrate. The thin film semiconductor device further includes a protective circuit element having a PIN diode having the semiconductor film, and a floating electrode disposed opposite to an I layer of the PIN diode with an insulating film disposed therebetween.

Abstract: A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

Abstract: A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal .portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

Abstract: A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved.

Abstract: A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

Abstract: A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.