Patents by Inventor Tomotaka Narita

Tomotaka Narita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20190259867
    Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a second electrode, and a first layer. The first layer includes at least one selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride. The first layer includes a first portion, a second portion, and a third portion. The first portion is provided on the second electrode. The second portion is provided on the first portion. A content of silicon of the second portion is higher than a content of silicon of the first portion. A third portion is provided on the second portion. A content of silicon of the third portion is lower than the content of silicon of the second portion.
    Type: Application
    Filed: July 18, 2018
    Publication date: August 22, 2019
    Applicants: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventor: Tomotaka NARITA
  • Semiconductor device
    Patent number: 10388780
    Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a second electrode, and a first layer. The first layer includes at least one selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride. The first layer includes a first portion, a second portion, and a third portion. The first portion is provided on the second electrode. The second portion is provided on the first portion. A content of silicon of the second portion is higher than a content of silicon of the first portion. A third portion is provided on the second portion. A content of silicon of the third portion is lower than the content of silicon of the second portion.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: August 20, 2019
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventor: Tomotaka Narita