Patents by Inventor Tomotaka Yamada
Tomotaka Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240118619Abstract: A resist composition including a silicon-containing resin and an acid generator component that generates acid upon exposure. The acid generator component includes an onium salt containing an anion moiety having an iodine atom and a cation moiety.Type: ApplicationFiled: September 1, 2023Publication date: April 11, 2024Inventors: Keiichi Ibata, Tomotaka Yamada
-
Publication number: 20230314945Abstract: A negative-tone resist composition containing a silicon-containing resin, an acid generator component that generates acid upon exposure, and a crosslinking agent component. The silicon-containing resin (A) contains a silicon-containing polymer having a phenolic hydroxyl group, and the acid generator component contains a sulfonium salt having a fluorine atom in a cation moiety.Type: ApplicationFiled: March 27, 2023Publication date: October 5, 2023Inventors: Keiichi IBATA, Masaru TAKESHITA, Tomotaka YAMADA
-
Patent number: 10261416Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid, including a base material including a copolymer having a structural unit represented by general formula (a9-1) or a structural unit represented by general formula (a9-2), 30 mol % or more of a structural unit represented by general formula (a10-1) and 45 mol % or more of a structural unit having an acid-decomposable group which increases a polarity under the action of an acid. In each formula, Rs is a hydrogen atom or the like; Ya91 and YaX1 are a single bond or a divalent linking group; R91 is a hydrocarbon group having 1 to 20 carbon atoms or the like; R92 is an oxygen atom or the like; j and nax1 are integers of 1 to 3; Wax1 is a (nax1+1)-valent aromatic hydrocarbon group.Type: GrantFiled: August 25, 2017Date of Patent: April 16, 2019Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Tomotaka Yamada, Takashi Kamizono, Yuki Fukumura, Tatsuya Fujii
-
Publication number: 20180067394Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid, including a base material including a copolymer having a structural unit represented by general formula (a9-1) or a structural unit represented by general formula (a9-2), 30 mol % or more of a structural unit represented by general formula (a10-1) and 45 mol % or more of a structural unit having an acid-decomposable group which increases a polarity under the action of an acid. In each formula, Rs is a hydrogen atom or the like; Ya91 and YaX1 are a single bond or a divalent linking group; R91 is a hydrocarbon group having 1 to 20 carbon atoms or the like; R92 is an oxygen atom or the like; j and nax1 are integers of 1 to 3; Wax1 is a (nax1+1)-valent aromatic hydrocarbon group.Type: ApplicationFiled: August 25, 2017Publication date: March 8, 2018Inventors: Tomotaka YAMADA, Takashi KAMIZONO, Yuki FUKUMURA, Tatsuya FUJII
-
Patent number: 9170487Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resist composition including a base component that exhibits changed solubility in a developing solution under the action of acid, the base component containing a resin component having a structural unit represented by general formula (a0-1) shown below: in which R1 represents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms, R2 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and X represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom.Type: GrantFiled: March 25, 2013Date of Patent: October 27, 2015Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Yusuke Suzuki, Tomotaka Yamada
-
Patent number: 8828304Abstract: A method of forming a resist pattern of high aspect ratio excelling in etching resistance by the use of nanoimprint lithography. The method of forming a resist pattern by nanoimprint lithography comprises the steps of disposing organic layer (4) on support (1); providing resist layer (2) on the organic layer (4) with the use of chemical amplification type negative resist composition containing silsesquioxane resin (A); pressing light transmission allowing mold (3) with partial light shielding portion (5) against the resist layer (2) and thereafter carrying out exposure from the upside of the mold (3); and detaching the mold (3).Type: GrantFiled: May 30, 2007Date of Patent: September 9, 2014Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Tomotaka Yamada
-
Publication number: 20130260312Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resist composition including a base component that exhibits changed solubility in a developing solution under the action of acid, the base component containing a resin component having a structural unit represented by general formula (a0-1) shown below: in which R1 represents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms, R2 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and X represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom.Type: ApplicationFiled: March 25, 2013Publication date: October 3, 2013Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Yusuke Suzuki, Tomotaka Yamada
-
Patent number: 8216763Abstract: A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.Type: GrantFiled: October 10, 2006Date of Patent: July 10, 2012Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Yasushi Fujii, Hisanobu Harada, Koji Yonemura, Isamu Takagi, Daisuke Kawana, Tomotaka Yamada, Toshikazu Takayama
-
Patent number: 8198004Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.Type: GrantFiled: October 15, 2008Date of Patent: June 12, 2012Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Taku Hirayama, Hideo Hada, Satoshi Fujimura, Takeshi Iwai, Mitsuru Sato, Ryoichi Takasu, Toshikazu Tachikawa, Jun Iwashita, Keita Ishiduka, Tomotaka Yamada, Toshikazu Takayama, Masaaki Yoshida
-
Publication number: 20090220889Abstract: A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.Type: ApplicationFiled: October 10, 2006Publication date: September 3, 2009Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Kazufumi Sato, Yasushi Fujii, Hisanobu Harada, Koji Yonemura, Isamu Takagi, Daisuke Kawana, Tomotaka Yamada, Toshikazu Takayama
-
Publication number: 20090189317Abstract: A method of forming a resist pattern of high aspect ratio excelling in etching resistance by the use of nanoimprint lithography. The method of forming a resist pattern by nanoimprint lithography comprises the steps of disposing organic layer (4) on support (1); providing resist layer (2) on the organic layer (4) with the use of chemical amplification type negative resist composition containing silsesquioxane resin (A); pressing light transmission allowing mold (3) with partial light shielding portion (5) against the resist layer (2) and thereafter carrying out exposure from the upside of the mold (3); and detaching the mold (3).Type: ApplicationFiled: May 30, 2007Publication date: July 30, 2009Applicant: Tokyo Ohka Kogyo Co., LtdInventors: Kazufumi Sato, Tomotaka Yamada
-
Patent number: 7541138Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.Type: GrantFiled: January 10, 2007Date of Patent: June 2, 2009Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Taku Hirayama, Hideo Hada, Satoshi Fujimura, Takeshi Iwai, Mitsuru Sato, Ryoichi Takasu, Toshikazu Tachikawa, Jun Iwashita, Keita Ishiduka, Tomotaka Yamada, Toshikazu Takayama, Masaaki Yoshida
-
Publication number: 20090130605Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.Type: ApplicationFiled: October 15, 2008Publication date: May 21, 2009Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Taku Hirayama, Hideo Hada, Satoshi Fujimura, Takeshi Iwai, Mitsuru Sato, Ryoichi Takasu, Toshikazu Tachikawa, Jun Iwashita, Keita Ishiduka, Tomotaka Yamada, Toshikazu Takayama, Masaaki Yoshida
-
Patent number: 7527909Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.Type: GrantFiled: January 10, 2007Date of Patent: May 5, 2009Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Taku Hirayama, Hideo Hada, Satoshi Fujimura, Takeshi Iwai, Mitsuru Sato, Ryoichi Takasu, Toshikazu Tachikawa, Jun Iwashita, Keita Ishiduka, Tomotaka Yamada, Toshikazu Takayama, Masaaki Yoshida
-
Publication number: 20090068586Abstract: A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R1 and R2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].Type: ApplicationFiled: October 8, 2008Publication date: March 12, 2009Applicant: Tokyo Ohka Kogyo Co., Ltd.Inventors: Tsuyoshi Nakamura, Koki Tamura, Tomotaka Yamada, Taku Hirayama, Daisuke Kawana, Takayuki Hosono
-
Patent number: 7501220Abstract: A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.Type: GrantFiled: May 13, 2004Date of Patent: March 10, 2009Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Taku Hirayama, Hideo Hada, Satoshi Fujimura, Takeshi Iwai, Mitsuru Sato, Ryoichi Takasu, Toshikazu Tachikawa, Jun Iwashita, Keita Ishiduka, Tomotaka Yamada, Toshikazu Takayama, Masaaki Yoshida
-
Patent number: 7416832Abstract: A positive resist composition capable of forming a resist pattern having excellent shape is provided. This composition is a positive resist composition including a base resin component (A) and an acid generator component (B) generating an acid under exposure, which are dissolved in an organic solvent, wherein the base resin component (A) is a silicone resin, and the organic solvent contains propylene glycol monomethyl ether (x1) and a solvent (S2) having a boiling point higher than that of the propylene glycol monomethyl ether.Type: GrantFiled: March 28, 2005Date of Patent: August 26, 2008Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Daisuke Kawana, Tomotaka Yamada, Takayuki Hosono, Koki Tamura
-
Patent number: 7318992Abstract: A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.Type: GrantFiled: March 28, 2005Date of Patent: January 15, 2008Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Daisuke Kawana, Tomotaka Yamada, Hiroshi Shimbori, Koki Tamura, Tomoyuki Ando, Takayuki Hosono
-
Publication number: 20070281098Abstract: A composition for forming an antireflection coating, characterized in that it comprises an organic solvent and, dissolved therein, (A) a ladder silicone copolymer containing (a1) 10 to 90 mole % of a (hydroxyphenylalkyl)silsesquioxane unit, (a2) 0 to 50 mole % of a (alkoxyphenylalkyl)silsesquioxane unit and (a3) 10 to 90 mole % of an alkyl or phenylsilsesquioxane unit, (B) an acid generator generating an acid upon exposure to heat or light, and (C) a crosslinking agent, and is capable of forming an antireflection coating exhibiting an optional parameter (k value) for an ArF laser of the range of 0.002 to 0.95. The composition is soluble in an organic solvent, can be applied by a conventional spin coating method with ease, has good storage stability, and can exhibit an adjusted preventive capability for reflection through the introduction of a chromophoric group absorbing a radiation ray thereto.Type: ApplicationFiled: July 31, 2007Publication date: December 6, 2007Inventors: Taku Hirayama, Tomotaka Yamada, Daisuke Kawana, Kouki Tamura, Kazufumi Sato
-
Patent number: 7261994Abstract: A positive resist composition having excellent mask linearity is provided. This composition is a positive resist composition comprising a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin and the acid generator component (B) contains an onium salt-based acid generator (B1) containing a perfluoroalkyl sulfonate ion having 3 or 4 carbon atoms as an anion.Type: GrantFiled: March 28, 2005Date of Patent: August 28, 2007Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takayuki Hosono, Koki Tamura, Daisuke Kawana, Tomotaka Yamada