Abstract: Metal foil base material placed on lower blade is first restricted under pressure by lower blade and pad and then cut by a shearing action based on an engagement of lower blade side cutting edge and upper blade side cutting edge. Resin face sheets are fixed to the top surface of lower blade and the pressing surface of pad, the face sheets having a larger friction coefficient than that of these surfaces. By frictional forces imparted by face sheets, metal foil base material is prevented from being dragged and moved by the pressing force of the upper blade prior to cutting. Consequently, the occurrence of “burr”, “roll-up”, and so forth is eliminated thereby ensuring a good cutting quality.

Abstract: Metal foil base material placed on lower blade is first restricted under pressure by lower blade and pad and then cut by a shearing action based on an engagement of lower blade side cutting edge and upper blade side cutting edge. Resin face sheets are fixed to the top surface of lower blade and the pressing surface of pad, the face sheets having a larger friction coefficient than that of these surfaces. By frictional forces imparted by face sheets, metal foil base material is prevented from being dragged and moved by the pressing force of the upper blade prior to cutting. Consequently, the occurrence of “burr”, “roll-up”, and so forth is eliminated thereby ensuring a good cutting quality.

Abstract: A method of improving a semiconductor substrate including a SiGe film on a Si or SOI substrate is provided. The method includes determining a relationship between a film condition of the SiGe film and a hydrogen ion implantation condition used in making the SiGe film so as to achieve relaxation of lattice distortion in the SiGe film as well as improved crystallinity and/or surface condition of the SiGe film, so that improved conditions for improving quality of the SiGe film on the Si or SOI substrate can be determined.

Abstract: A manufacturing method of a semiconductor substrate comprising the steps of: (a) forming a SiGe layer on a substrate of which the surface is made of silicon; (b) further forming a semiconductor layer on the SiGe layer; and (c) implanting ions into regions of the SiGe layer in the substrate that become element isolation formation regions, and carrying out a heat treatment.

Abstract: A semiconductor device comprises: a semiconductor substrate on which a silicon germanium film, a carbon-containing silicon film and a silicon film are formed in this order and a gate electrode on the semiconductor substrate with intervention of a gate oxide film, wherein a channel region of the semiconductor device the is formed in the carbon-containing silicon film or wherein a channel region of the semiconductor device is formed in the silicon germanium film.

Abstract: A method of forming a memory device includes preparing a substrate having predefined characteristics; forming a first layer set on the substrate, including: building a first forming layer, having first form segments, on the substrate; building placeholder sidewalls on the first form segments wherein the sidewalls have a thickness of between about one nm and 100 nm; building a second forming layer, having second form segments, on the substrate between the placeholder sidewalls; removing the placeholder sidewalls forming vacated areas; and building active devices in the vacated areas.

Abstract: A method for improving a semiconductor substrate having a SiGe film on a Si or SOI substrate by using a hydrogen ion implantation and an annealing, wherein the hydrogen ion implantation comprises the steps of:

Abstract: A manufacturing method of a semiconductor substrate comprising the steps of: (a) forming a SiGe layer on a substrate of which the surface is made of silicon; (b) further forming a semiconductor layer on the SiGe layer; and (c) implanting ions into regions of the SiGe layer in the substrate that become element isolation formation regions, and carrying out a heat treatment.

Abstract: A method of forming a memory device includes preparing a substrate having predefined characteristics; forming a first layer set on the substrate, including: building a first forming layer, having first form segments, on the substrate; building placeholder sidewalls on the first form segments wherein the sidewalls have a thickness of between about one nm and 100 nm; building a second forming layer, having second form segments, on the substrate between the placeholder sidewalls; removing the placeholder sidewalls forming vacated areas; and building active devices in the vacated areas.

Abstract: A semiconductor device comprises: a semiconductor substrate on which a silicon germanium film, a carbon-containing silicon film and a silicon film are formed in this order and a gate electrode on the semiconductor substrate with intervention of a gate oxide film, wherein a channel region of the semiconductor device the is formed in the carbon-containing silicon film or wherein a channel region of the semiconductor device is formed in the silicon germanium film.

Abstract: A method for manufacturing a semiconductor device including steps of forming a gate oxide film and a gate electrode on a semiconductor substrate; implanting impurity ions of the same conductivity as the substrate in an oblique direction at a first tilt angle to the normal line of the substrate and with a first acceleration voltage and dose, while rotating the substrate about the normal line thereof; implanting impurities of the same conductivity as the substrate in the same manner except for using a tilt angle to the normal line which is greater and a dose which is smaller than that of the first tilt angle and dose; and forming source and drain regions by implanting impurity ions of the opposite conductivity to the substrate into the substrate, followed by performing a thermal treatment.

Abstract: A method for manufacturing a semiconductor device including steps of forming a gate oxide film and a gate electrode on a semiconductor substrate; implanting impurity ions of the same conductivity as the substrate in an oblique direction at a first tilt angle to the normal line of the substrate and with a first acceleration voltage and dose, while rotating the substrate about the normal line thereof; implanting impurities of the same conductivity as the substrate in the same manner except for using a tilt angle to the normal line which is greater and a dose is smaller than that of the first tilt angle and dose; and forming source and drain regions by implanting impurity ions of the opposite conductivity to the substrate into the substrate, followed by performing a thermal treatment.