Abstract: To provide a new temperature distribution evaluation method, a temperature distribution evaluation device, and a soaking range evaluation method, as the temperature distribution evaluation method which evaluates a temperature distribution of a heating area 40A provided in a heating device 40, the present invention is a temperature distribution evaluation method which, in the heating area 40A, heats a semiconductor substrate 10 and a transmitting and receiving body 20 for transporting a raw material to and from the semiconductor substrate 10, and evaluates a temperature distribution of the heating area 40A on the basis of a substrate thickness variation amount A of the semiconductor substrate 10. Accordingly, temperature distribution evaluation can be implemented for a high temperature area at 1600-2200° C. or the like at which it is hard to evaluate the temperature distribution due to the limit of a thermocouple material.

Abstract: An object of the present invention is to provide a SiC semiconductor substrate capable of reducing a density of basal plane dislocations (BPD) in a growth layer, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a strained layer removal process S10 that removes a strained layer introduced on a surface of a SiC substrate; and an epitaxial growth process S20 that conducts growth under a condition that a terrace width W of the SiC substrate is increased. When a SiC semiconductor substrate is manufactured in such processes, the basal plane dislocations BPD in the growth layer can be reduced, and a yield of a SiC semiconductor device can be improved.

Abstract: An object of the present invention is to provide a SiC semiconductor substrate having a growth layer with a controlled step height, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a growth process that grows a SiC substrate 10 in a SiC—Si equilibrium vapor pressure environment. In this way, when the SiC substrate 10 is grown in the SiC—Si equilibrium vapor pressure environment, it is possible to provide a SiC semiconductor substrate in which the step height of the growth layer is controlled.