Abstract: A semiconductor device has a semiconductor chip, a signal lead that is arranged in a periphery of the semiconductor chip and has a main surface and a rear surface opposed to the main surface, a wire that electrically connects the semiconductor chip and the main surface of the signal lead, and a sealing body made of sealing resin that seals the semiconductor chip, the signal lead and the wire. The signal lead has, in an extending direction of the signal lead, one end located inside the sealing body, the other end located outside the sealing body, and a wire connection region which is the main surface of the signal lead and to which the wire is connected, and an inner groove is provided in the main surface of the signal lead between the one end and the wire connection region.

Abstract: Reliability of a semiconductor device is improved. A power device includes: a semiconductor chip; a chip mounting part; a solder material electrically coupling a back surface electrode of the semiconductor chip with an upper surface of the chip mounting part; a plurality of inner lead parts and a plurality of outer lead parts electrically coupled with an electrode pad of the semiconductor chip through wires; and a sealing body for sealing the semiconductor chip and the wires. Further, a recess is formed in a peripheral region of the back surface of the semiconductor chip. The recess has a first surface extending to join the back surface and a second surface extending to join the first surface. Also, a metal film is formed over the first surface and the second surface of the recess.

Abstract: Reliability of a semiconductor device is improved. A power device includes: a semiconductor chip; a chip mounting part; a solder material electrically coupling a back surface electrode of the semiconductor chip with an upper surface of the chip mounting part; a plurality of inner lead parts and a plurality of outer lead parts electrically coupled with an electrode pad of the semiconductor chip through wires; and a sealing body for sealing the semiconductor chip and the wires. Further, a recess is formed in a peripheral region of the back surface of the semiconductor chip. The recess has a first surface extending to join the back surface and a second surface extending to join the first surface. Also, a metal film is formed over the first surface and the second surface of the recess.

Abstract: Reliability of a semiconductor device is improved. A power device includes: a semiconductor chip; a chip mounting part; a solder material electrically coupling a back surface electrode of the semiconductor chip with an upper surface of the chip mounting part; a plurality of inner lead parts and a plurality of outer lead parts electrically coupled with an electrode pad of the semiconductor chip through wires; and a sealing body for sealing the semiconductor chip and the wires. Further, a recess is formed in a peripheral region of the back surface of the semiconductor chip. The recess has a first surface extending to join the back surface and a second surface extending to join the first surface. Also, a metal film is formed over the first surface and the second surface of the recess.

Abstract: A semiconductor device has a semiconductor chip, a signal lead that is arranged in a periphery of the semiconductor chip and has a main surface and a rear surface opposed to the main surface, a wire that electrically connects the semiconductor chip and the main surface of the signal lead, and a sealing body made of sealing resin that seals the semiconductor chip, the signal lead and the wire. The signal lead has, in an extending direction of the signal lead, one end located inside the sealing body, the other end located outside the sealing body, and a wire connection region which is the main surface of the signal lead and to which the wire is connected, and an inner groove is provided in the main surface of the signal lead between the one end and the wire connection region.