Patents by Inventor Tomoya Kishi
Tomoya Kishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240387473Abstract: A semiconductor module includes semiconductor units arrayed in a line, a first sensing terminal disposed on a first side of the line, and a second sensing terminal disposed on a second side of the line. Each semiconductor unit includes an upper arm circuit, a lower arm circuit, and an insulating substrate including a first conductor pattern. The first sensing terminal is connected to an emitter of a first semiconductor chip included in any one semiconductor unit via a first wiring route including a first sensing conductor pattern provided on the insulating substrate. The second sensing terminal is connected to the emitter of the first semiconductor chip connected to the first sensing terminal, via a second wiring route including a second sensing conductor pattern provided on the insulating substrate separately from the first conductor pattern, without passing via the first conductor pattern.Type: ApplicationFiled: February 27, 2024Publication date: November 21, 2024Applicant: FUJI ELECTRIC CO., LTD.Inventor: Tomoya KISHI
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Patent number: 10090208Abstract: Provided are: a method for measuring and evaluating (predicting or estimating) stress stability of an oxide semiconductor thin film in a contactless manner; and a quality control method for an oxide semiconductor. This evaluation method comprises a first step and a second step. The first step includes: subjecting an oxide semiconductor thin film to irradiation with both excitation light and microwave radiation; stopping the irradiation with the excitation light after the maximum intensity of reflected wave of the microwave radiation, which varies with the irradiation of the excitation light, from the thin film has been observed; and thereafter measuring a variation in the reflectance with which the microwave radiation is reflected by the thin film. The second step includes: calculating, from the variation in the reflectance, a parameter that corresponds to slow attenuation observed about 1 ?s after the stopping; and thus evaluating the stress stability of the oxide semiconductor.Type: GrantFiled: January 9, 2014Date of Patent: October 2, 2018Assignee: Kobe Steel, Ltd.Inventors: Tomoya Kishi, Kazushi Hayashi, Toshihiro Kugimiya
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Publication number: 20160223462Abstract: An evaluation device for an oxide semiconductor thin film includes a first excitation light irradiation unit configured to irradiate a measurement region of a sample with first excitation light and to generate an electron-hole pair, an electromagnetic wave irradiation unit configured to irradiate with electromagnetic wave, a reflecting electromagnetic wave intensity detection unit configured to detect intensity of a reflected electromagnetic wave, a second excitation light irradiation unit configured to irradiate the sample with second excitation light and to generate photoluminescence light, an emission intensity measurement unit configured to measure emission intensity of the photoluminescence light, and an evaluation unit configured to evaluate mobility and stress stability. The first excitation light irradiation unit and the second excitation light irradiation unit are the same or different excitation light radiation units.Type: ApplicationFiled: September 10, 2014Publication date: August 4, 2016Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)Inventors: Kazushi HAYASHI, Tomoya KISHI
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Patent number: 9343586Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.Type: GrantFiled: June 6, 2013Date of Patent: May 17, 2016Assignee: Kobe Steel, Ltd.Inventors: Hiroshi Goto, Aya Miki, Tomoya Kishi, Kenta Hirose, Shinya Morita, Toshihiro Kugimiya
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Patent number: 9324882Abstract: A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.Type: GrantFiled: May 26, 2015Date of Patent: April 26, 2016Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.Inventors: Hiroshi Goto, Aya Miki, Tomoya Kishi, Kenta Hirose, Shinya Morita, Toshihiro Kugimiya, Byung Du Ahn, Gun Hee Kim, Yeon Hong Kim
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Patent number: 9316589Abstract: This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.Type: GrantFiled: September 4, 2013Date of Patent: April 19, 2016Assignee: Kobe Steel, Ltd.Inventors: Kazushi Hayashi, Toshihiro Kugimiya, Tomoya Kishi, Aya Miki
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Publication number: 20160099357Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.Type: ApplicationFiled: May 26, 2015Publication date: April 7, 2016Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)Inventors: Hiroshi GOTO, Aya MIKI, Tomoya KISHI, Kenta HIROSE, Shinya MORITA, Toshihiro KUGIMIYA
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Publication number: 20150371906Abstract: Provided are: a method for measuring and evaluating (predicting or estimating) stress stability of an oxide semiconductor thin film in a contactless manner; and a quality control method for an oxide semiconductor. This evaluation method comprises a first step and a second step. The first step includes: subjecting an oxide semiconductor thin film to irradiation with both excitation light and microwave radiation; stopping the irradiation with the excitation light after the maximum intensity of reflected wave of the microwave radiation, which varies with the irradiation of the excitation light, from the thin film has been observed; and thereafter measuring a variation in the reflectance with which the microwave radiation is reflected by the thin film. The second step includes: calculating, from the variation in the reflectance, a parameter that corresponds to slow attenuation observed about 1 ?s after the stopping; and thus evaluating the stress stability of the oxide semiconductor.Type: ApplicationFiled: January 9, 2014Publication date: December 24, 2015Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Tomoya KISHI, Kazushi HAYASHI, Toshihiro KUGIMIYA
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Publication number: 20150355095Abstract: This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.Type: ApplicationFiled: September 4, 2013Publication date: December 10, 2015Inventors: Kazushi HAYASHI, Toshihiro KUGIMIYA, Tomoya KISHI, Aya MIKI
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Patent number: 9202926Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IGZO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; In: 25% or less (excluding 0%); Ga: 5% or more; Zn: 30.0 to 60.0%; and Sn: 8 to 30%.Type: GrantFiled: June 6, 2013Date of Patent: December 1, 2015Assignee: Kobe Steel, Ltd.Inventors: Tomoya Kishi, Kenta Hirose, Shinya Morita, Toshihiro Kugimiya
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Patent number: 9190523Abstract: An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.Type: GrantFiled: July 20, 2012Date of Patent: November 17, 2015Assignees: SAMSUNG DISPLAY CO., LTD., KOBE STEEL, LTD.Inventors: Byung Du Ahn, Je Hun Lee, Sei-Yong Park, Jun Hyun Park, Gun Hee Kim, Ji Hun Lim, Jae Woo Park, Jin Seong Park, Toshihiro Kugimiya, Aya Miki, Shinya Morita, Tomoya Kishi, Hiroaki Tao
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Publication number: 20150255627Abstract: A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.Type: ApplicationFiled: May 26, 2015Publication date: September 10, 2015Inventors: Hiroshi GOTO, Aya MIKI, Tomoya KISHI, Kenta HIROSE, Shinya MORITA, Toshihiro KUGIMIYA
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Publication number: 20150123116Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 5% or more; In: 25% or less (excluding 0%); Zn: 35 to 65%; and Sn: 8 to 30%.Type: ApplicationFiled: June 6, 2013Publication date: May 7, 2015Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.)Inventors: Hiroshi Goto, Aya Miki, Tomoya Kishi, Kenta Hirose, Shinya Morita, Toshihiro Kugimiya
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Publication number: 20150076488Abstract: Provided is a thin film transistor having an oxide semiconductor layer that has high mobility, excellent stress resistance, and good wet etching property. The thin film transistor comprises at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate comprising a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IGZO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; In: 25% or less (excluding 0%); Ga: 5% or more; Zn: 30.0 to 60.0%; and Sn: 8 to 30%.Type: ApplicationFiled: June 6, 2013Publication date: March 19, 2015Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel,Ltd.)Inventors: Tomoya Kishi, Kenta Hirose, Shinya Morita, Toshihiro Kugimiya
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Patent number: 8743307Abstract: A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.Type: GrantFiled: June 7, 2012Date of Patent: June 3, 2014Assignees: Samsung Display Co, Ltd., Kobe Steel, Ltd.Inventors: Jae Woo Park, Je Hun Lee, Byung Du Ahn, Sei-Yong Park, Jun Hyun Park, Gun Hee Kim, Ji Hun Lim, Kyoung Won Lee, Toshihiro Kugimiya, Aya Miki, Shinya Morita, Tomoya Kishi, Hiroaki Tao, Hiroshi Goto
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Publication number: 20130270109Abstract: The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of Al, Si, Ta, Ti, La, Mg and Nb. The present invention makes it possible to provide oxides for semiconductor layers of thin-film transistors, in which connection thin-film transistors with In—Zn—O oxide semiconductors not containing Ga have favorable switching characteristics and high stress resistance, and in particular, show a small variation of the threshold voltage before and after positive bias stress tests, thereby having high stability.Type: ApplicationFiled: December 28, 2011Publication date: October 17, 2013Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Shinya Morita, Aya Miki, Satoshi Yasuno, Toshihiro Kugimiya, Tomoya Kishi
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Publication number: 20130075720Abstract: An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.Type: ApplicationFiled: July 20, 2012Publication date: March 28, 2013Applicants: Kobe Steel, Ltd., SAMSUNG DISPLAY CO., LTD.Inventors: Byung Du AHN, Je Hun LEE, Sei-Yong PARK, Jun Hyun PARK, Gun Hee KIM, Ji Hun LIM, Jae Woo PARK, Jin Seong PARK, Toshihiro KUGIMIYA, Aya MIKI, Shinya MORITA, Tomoya KISHI, Hiroaki TAO
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Publication number: 20110248272Abstract: Provided is a reflective anode for an organic EL display device having a reflective film made from an Al-based alloy which can realize a low contact resistance with an oxide conductive film and achieve an excellent reflectivity. Provided is also a method for manufacturing the reflective anode for an organic EL display device. The method includes: a step of forming an Al-based alloy film containing 0.1 to 2 atomic % of Ni or Co on a substrate; a step of subjecting the Al-based alloy film to a thermal treatment in a vacuum or an inactive gas atmosphere at the temperature of 150 degrees C. or above; and a step of forming an oxide conductive film so as to be in direct contact with the Al-based alloy film.Type: ApplicationFiled: November 9, 2009Publication date: October 13, 2011Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd)Inventors: Mototaka Ochi, Hiroshi Goto, Tomoya Kishi, Nobuyuki Kawakami
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Publication number: 20110198602Abstract: Disclosed is an Al alloy film which can be in direct contact with a transparent pixel electrode in a wiring structure of a thin film transistor substrate that is used in a display device, and which has improved corrosion resistance against an amine remover liquid that is used during the production process of the thin film transistor. Also disclosed is a display device using the Al alloy film. Specifically disclosed is an Al alloy film for a display device, said Al alloy film being directly connected with a transparent conductive film on a substrate of a display device, and containing 0.05-2.0 atom % of Ge, at least one element selected from among element group X (Ni, Ag, Co, Zn and Cu), and 0.02-2 atom % of at least one element selected from among element group Q consisting of the rare earth elements. A Ge-containing deposit and/or a Ge-concentrated part is present in the Al alloy film for a display device. Also specifically disclosed is a display device comprising the Al alloy film.Type: ApplicationFiled: November 5, 2009Publication date: August 18, 2011Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Akira Nanbu, Hiroshi Goto, Aya Miki, Hiroyuki Okuno, Junichi Nakai, Tomoya Kishi, Toshiaki Takagi, Shigenobu Namba, Mamoru Nagao, Nobuhiro Kobayashi
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Publication number: 20100328247Abstract: Disclosed is a highly reliable touch panel sensor comprising a guiding wiring that is less likely to cause an increase in electrical resistance and disconnection with the elapse of time, has a low electrical resistance, can ensure electrical conduction to a transparent conductive film, and can be connected directly to the transparent conductive film. The touch panel sensor comprises a transparent conductive film and a guiding wiring made of an aluminum alloy film connected directly to the transparent conductive film. The aluminum alloy film comprises 0.2 to 10 atomic% in total of at least one element selected from an X group consisting of Ni and Co. The aluminum alloy film has a hardness of 2 to 15 GPa.Type: ApplicationFiled: February 20, 2009Publication date: December 30, 2010Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)Inventors: Aya Miki, Hiroshi Goto, Hiroyuki Okuno, Tomoya Kishi, Akira Nanbu