Abstract: An imaging device includes a pixel array unit including a plurality of pixels each including a plurality of photoelectric converters, and a signal processing unit including an analog-digital conversion unit, wherein a part of the pixels outputs a first analog signal based on electric charge generated at N photoelectric converters, and a second analog signal based on electric charge generated at M (M is an integer larger than N) photoelectric converters including the N photoelectric converters, other part of the pixels outputs the second analog signal, the number of the second analog signals output to the signal processing unit is larger than the number of the first analog signals output to the signal processing unit, and the signal processing unit receives the first and the second analog signals from each of the part of the pixels before the analog-digital conversion unit ends analog-digital conversion of the first analog signal.

Abstract: An imaging device includes a pixel circuit configured to generate an analog signal; an amplification circuit including a feedback capacitor and its reset switching element; a sample and hold circuit for the amplified analog signal; an A/D conversion circuit for the analog signal held in the sample and hold circuit; a memory circuit configured to store the digital signal; a reading circuit configured to read the digital signal stored in the memory circuit; and a control circuit configured to perform a rise and a fall of the control signal such that the rise and the fall do not overlap a conversion period of the analog signal by the A/D conversion circuit and do not overlap a reading period of the digital signal by the reading circuit, when the switching element is off during a sampling period of the analog signal.

Abstract: An imaging device includes a pixel array unit including a plurality of pixels each including a plurality of photoelectric converters, and a signal processing unit including an analog-digital conversion unit, wherein a part of the pixels outputs a first analog signal based on electric charge generated at N photoelectric converters, and a second analog signal based on electric charge generated at M (M is an integer larger than N) photoelectric converters including the N photoelectric converters, other part of the pixels outputs the second analog signal, the number of the second analog signals output to the signal processing unit is larger than the number of the first analog signals output to the signal processing unit, and the signal processing unit receives the first and the second analog signals from each of the part of the pixels before the analog-digital conversion unit ends analog-digital conversion of the first analog signal.

Abstract: An imaging apparatus includes: a first signal processing circuit arranged in a first direction to process a signal from a first group of pixels; a second signal processing circuit arranged in a second direction to process a signal from a second group of pixels; a first external connecting terminal arranged in the first direction to supply a first potential to the first signal processing circuit; a second external connecting terminal arranged in the second direction to supply the first potential to the second signal processing circuit; a third external connecting terminal arranged in the first direction to supply a second potential to the first group of pixels; and a fourth external connecting terminal arranged in the second direction to supply the second potential to the second group of pixels.

Abstract: A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: in which R1 to R4 each independently represent a linear or branched alkyl group, and the total number of carbon atoms contained in each of the alkyl groups represented by R1 to R4 is 4 to 15.

Abstract: A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

Abstract: A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

Abstract: A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass: in which R1 to R4 each independently represent a linear or branched alkyl group, and the total number of carbon atoms contained in each of the alkyl groups represented by R1 to R4 is 4 to 15.

Abstract: A coating agent for forming a fine pattern capable of simultaneously achieving slimming and roughness reduction of a positive-type resist pattern without deteriorating the cross-sectional shape of the slimmed positive type resist pattern and a method of slimming treatment of a positive-type resist pattern using the above coating agent for forming a fine pattern. A coating agent comprising a nitrogen-containing compound with a specific structure and an organic solvent is used as the coating agent for forming fine pattern used for a positive-type resist pattern. The coating agent may include a basic nitrogen-containing compound and/or a water-soluble polymer or an alkali-soluble polymer.

Abstract: A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

Abstract: An imaging apparatus includes: a first signal processing circuit arranged in a first direction to process a signal from a first group of pixels; a second signal processing circuit arranged in a second direction to process a signal from a second group of pixels; a first external connecting terminal arranged in the first direction to supply a first potential to the first signal processing circuit; a second external connecting terminal arranged in the second direction to supply the first potential to the second signal processing circuit; a third external connecting terminal arranged in the first direction to supply a second potential to the first group of pixels; and a fourth external connecting terminal arranged in the second direction to supply the second potential to the second group of pixels.

Abstract: A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

Abstract: A developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. A method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The developing solution includes tetrabutylammonium hydroxide and at least one of a water-soluble organic solvent, a surfactant, and a clathrate compound. The temperature of the liquid is maintained at 27° C. or higher during dilution.

Abstract: A coating agent for forming a fine pattern capable of simultaneously achieving slimming and roughness reduction of a positive-type resist pattern without deteriorating the cross-sectional shape of the slimmed positive type resist pattern and a method of slimming treatment of a positive-type resist pattern using the above coating agent for forming a fine pattern. A coating agent comprising a nitrogen-containing compound with a specific structure and an organic solvent is used as the coating agent for forming fine pattern used for a positive-type resist pattern. The coating agent may include a basic nitrogen-containing compound and/or a water-soluble polymer or an alkali-soluble polymer.

Abstract: A coating agent for forming a fine pattern and a method for forming a fine pattern using the coating agent, in which the coating agent allows a resist pattern to be favorably fined, and can form a fined pattern having a suppressed deviation of CD. A coating agent for forming a fine pattern including (A) a water-soluble polymer is combined with a compound in which the compound has an alkyl group having 8 or more carbon atoms bound to a nitrogen atom, and is combined with 4 moles or more of ethylene oxide and/or propylene oxide with respect to 1 mole of a nitrogen atom bound with the alkyl group as (B) a nitrogen-containing compound.

Abstract: A developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. A method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The developing solution includes tetrabutylammonium hydroxide and at least one of a water-soluble organic solvent, a surfactant, and a clathrate compound. The temperature of the liquid is maintained at 27° C. or higher during dilution.

Abstract: A coating agent for forming a fine pattern and a method for forming a fine pattern using the coating agent, in which the coating agent allows a resist pattern to be favorably fined, and can form a fined pattern having a suppressed deviation of CD. A coating agent for forming a fine pattern including (A) a water-soluble polymer is combined with a compound in which the compound has an alkyl group having 8 or more carbon atoms bound to a nitrogen atom, and is combined with 4 moles or more of ethylene oxide and/or propylene oxide with respect to 1 mole of a nitrogen atom bound with the alkyl group as (B) a nitrogen-containing compound.

Abstract: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH??(2), in which x is an integer of no less than 3.

Abstract: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH??(2), in which x is an integer of no less than 3.