Abstract: An inertial sensor includes a dual atom interferometer. A moving standing light wave generation device in the dual atom interferometer generates M (3?M) moving standing light waves. Each of the M moving standing light waves is generated by a pair of counter-propagating laser beams. The moving standing light wave generation device adjusts two-photon detuning of a pair of counter-propagating laser beams corresponding to each of N (2?N<M) moving standing light waves out of the M moving standing light waves such that the difference between an interferometric phase corresponding to one atomic beam obtained by interfering with the M moving standing light waves and an interferometric phase corresponding to the other atomic beam obtained by interfering with the M moving standing light waves stays constant.

Abstract: Performance of a semiconductor device is improved. In a semiconductor substrate (SUB), a trench TR1 and a trench TR2 are formed so as to reach a predetermined depth from an upper surface (TS) of the semiconductor substrate (SUB). A field-plate electrode (FP) is formed at a lower portion of the trench TR1, and a gate-electrode GE1 is formed at an upper portion of the trench TR1. A gate electrode GE2 is formed inside the trench TR2. The depth of the trench TR1 is deeper than the depth of the trench TR2. The trench TR1 is surrounded by the trench TR2 in plan view.

Abstract: An injection needle includes: protrusions that protrude from a sheet base. The protrusions include a first protrusion having an opening at a tip end portion and being hollow, a second protrusion having no opening at a tip end portion; and an insertion depth controller provided at an intermediate position lower than a tip end position of the first protrusion and higher than a surface of the sheet base. A difference in height between the tip end position of the first protrusion and a position of the insertion depth controller is preferably 1 ?m or more and 5 000 ?m or less.

Abstract: A first trench extending in a Y direction is formed in each of a semiconductor substrate located in a cell region and the semiconductor substrate located in an outer peripheral region. A second trench is formed in the semiconductor substrate in the outer peripheral region so as to surround the cell region in a plan view. A p-type body region is formed in the semiconductor substrate in each region. A plurality of p-type floating regions is formed in the semiconductor substrate in the outer peripheral region. A field plate electrode is formed at a lower portion of each of the first trench and the second trench. A gate electrode is formed at an upper portion of the first trench located in the cell region. A floating gate electrode is formed at an upper portion of each of the first trench located in the outer peripheral region and the second trench.