Patents by Inventor Tomoya Okubo
Tomoya Okubo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10985029Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a process space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first as supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.Type: GrantFiled: December 11, 2019Date of Patent: April 20, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroyuki Ogawa, Tomoya Okubo, Akitaka Shimizu
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Publication number: 20200118830Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a process space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first as supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.Type: ApplicationFiled: December 11, 2019Publication date: April 16, 2020Inventors: Hiroyuki OGAWA, Tomoya OKUBO, Akitaka SHIMIZU
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Patent number: 10541145Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.Type: GrantFiled: March 29, 2018Date of Patent: January 21, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroyuki Ogawa, Tomoya Okubo, Akitaka Shimizu
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Publication number: 20180286696Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.Type: ApplicationFiled: March 29, 2018Publication date: October 4, 2018Inventors: Hiroyuki OGAWA, Tomoya OKUBO, Akitaka SHIMIZU
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Publication number: 20120186985Abstract: A forming method for an anodized aluminum film on a component for a substrate processing apparatus that subjects a substrate to plasma processing. The forming method includes connecting the component to the anode of a DC power source and immersing the component in a solution consisting mainly of an oxalic acid, and a step of immersing the component in the boiling water for 5 to 10 minutes. The anodized aluminum film grows toward the inside of the component. The amount of expansion and growth of the anodized aluminum film subjected to the semi-sealing process using the boiling water is smaller than the amount of expansion and growth of an anodized aluminum film subjected to a sealing process using water vapor. Further, generation of compressive force due to collision of crystal pillars in the anodized aluminum film is prevented when subjected to the semi-sealing process using the boiling water.Type: ApplicationFiled: March 30, 2012Publication date: July 26, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Kouji MITSUHASHI, Tomoya Okubo
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Patent number: 8124539Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.Type: GrantFiled: August 4, 2010Date of Patent: February 28, 2012Assignee: Tokyo Electron LimitedInventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
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Publication number: 20110183279Abstract: A substrate heating apparatus includes a container configured to be maintained in a depressurized state; and a substrate mounting table having a plurality of substrate support pins on its upper surface. The substrate mounting table is configured to mount a substrate while providing a gap between the upper surface of the substrate mounting table and the substrate. The substrate heating apparatus further includes a heater configured to heat the substrate through the substrate mounting table; a pressure regulator configured to regulate a pressure in the container; a temperature controller configured to control an output of the heater so as to control a temperature of the substrate mounting table; and a pressure controller configured to control the pressure regulator so as to control the pressure in the container.Type: ApplicationFiled: January 26, 2011Publication date: July 28, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Tomoya OKUBO, Masaki SUGIYAMA
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Publication number: 20110000883Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.Type: ApplicationFiled: August 4, 2010Publication date: January 6, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
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Publication number: 20080105203Abstract: A substrate processing apparatus that can prevent particles from being produced through chipping of a film. The film is formed on a surface of a component for the substrate processing apparatus by an anodic oxidization process in which the component is connected to the anode of a direct-current power source and immersed in a solution consisting mainly of an organic acid. The film is subjected to a semi-sealing process using boiling water.Type: ApplicationFiled: September 27, 2007Publication date: May 8, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Kouji Mitsuhashi, Tomoya Okubo
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Patent number: 7231321Abstract: A method of resetting a substrate processing apparatus having a chamber which is capable of carrying out abnormality judgment on the substrate processing apparatus accurately without causing a decrease in the utilization ratio of the substrate processing apparatus. The chamber is evacuated. A temperature in the chamber is set. Whether or not there is an abnormality in the chamber is judged. An atmosphere in the chamber is stabilized so as to conform to predetermined processing conditions. At least one selected from data that change in response to a change in a state inside the chamber is measured. The measured data is compared with reference data that corresponds to the measured data for a normal state in the chamber.Type: GrantFiled: November 10, 2005Date of Patent: June 12, 2007Assignee: Tokyo Electron LimitedInventors: Hajime Furuya, Hideki Tanaka, Tomoya Okubo, Ryoko Kobayashi
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Publication number: 20060100825Abstract: A method of resetting a substrate processing apparatus having a chamber which is capable of carrying out abnormality judgment on the substrate processing apparatus accurately without causing a decrease in the utilization ratio of the substrate processing apparatus. The chamber is evacuated. A temperature in the chamber is set. Whether or not there is an abnormality in the chamber is judged. An atmosphere in the chamber is stabilized so as to conform to predetermined processing conditions. At least one selected from data that change in response to a change in a state inside the chamber is measured. The measured data is compared with reference data that corresponds to the measured data for a normal state in the chamber.Type: ApplicationFiled: November 10, 2005Publication date: May 11, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Hajime Furuya, Hideki Tanaka, Tomoya Okubo, Ryoko Kobayashi
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Publication number: 20040261946Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.Type: ApplicationFiled: April 21, 2004Publication date: December 30, 2004Applicant: TOKYO ELECTRON LIMITEDInventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
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Publication number: 20040149214Abstract: This invention is a vacuum processing apparatus comprising of a vacuum processing area (14) having a stage (16) on which a substrate to be processed (17) is mounted, and a carrier port (18) provided on a periapheral wall of a processing chamber (11) forming the vacuum processing area (14) and carrying the substrate (17) onto and off the stage (16), for generating plasma in the vacuum processing area (14) and subjecting the substrate (17) on the stage (16) to a plasma processing, wherein a shutter (20) closing the carrier port (18) to prevent the plasma from being disordered when the plasma is generated in the vacuum processing chamber is provided.Type: ApplicationFiled: January 26, 2004Publication date: August 5, 2004Applicant: TOKYO ELECTRON LIMITEDInventors: Jun Hirose, Jun Ozawa, Tomoya Okubo, Tatsuya Fuji