Abstract: A friction stir welding apparatus has a probe rotatable and vertically movable with respect to a processing target member, a welding tool having an interposed member that covers a part of an outer periphery of the probe and is rotatable relative to the probe, a mounting member on which the processing target member is mounted, a movement mechanism having an arm fitted with the welding tool that can move the welding tool with respect to the processing target member by moving the arm, and a correction mechanism having a correction member that can correct a moving direction of the welding tool so as to be matched with a predetermined processing direction, by bringing the interposed member into contact with the processing target member when the welding tool is moved with respect to the processing target member by moving the arm, and fixed to the mounting member.

Abstract: In a friction stir welding apparatus that can control a penetrating position of a probe with respect to a processing target member to an optimum position at a time of friction stir welding by detecting a wear volume and a tip position of the probe, as a drive mechanism moves down a holder having a coefficient of thermal expansion larger than that of the probe and holding the probe, a detector can freely detect a length of a member including the holder and the probe, and a probe detection mechanism can freely detect a tip length, which is the length of the member of only the probe.

Abstract: In a friction stir welding apparatus that can control a penetrating position of a probe with respect to a processing target member to an optimum position at a time of friction stir welding by detecting a wear volume and a tip position of the probe, as a drive mechanism moves down a holder having a coefficient of thermal expansion larger than that of the probe and holding the probe, a detector can freely detect a length of a member including the holder and the probe, and a probe detection mechanism can freely detect a tip length, which is the length of the member of only the probe.

Abstract: A friction stir welding apparatus has a probe rotatable and vertically movable with respect to a processing target member, a welding tool having an interposed member that covers a part of an outer periphery of the probe and is rotatable relative to the probe, a mounting member on which the processing target member is mounted, a movement mechanism having an arm fitted with the welding tool that can move the welding tool with respect to the processing target member by moving the arm, and a correction mechanism having a correction member that can correct a moving direction of the welding tool so as to be matched with a predetermined processing direction, by bringing the interposed member into contact with the processing target member when the welding tool is moved with respect to the processing target member by moving the arm, and fixed to the mounting member.

Abstract: A nonvolatile semiconductor memory comprises: a semiconductor substrate; a first gate electrode formed on a surface of the semiconductor substrate through a first gate insulating film; a second gate electrode formed on the surface of the semiconductor substrate through a second gate insulating film and being adjacent to the first gate electrode through an insulating film; a charge trapping film formed at least in a trap region surrounded by the semiconductor substrate, the first gate electrode and the second gate electrode; and a tunnel insulating film formed between the charge trapping film and the second gate electrode. In one of programming and erasing, electrons are injected into the charge trapping film from the second gate electrode through the tunnel insulating film by Fowler-Nordheim tunneling.

Abstract: A nonvolatile semiconductor memory comprises: a semiconductor substrate; a first gate electrode formed on a surface of the semiconductor substrate through a first gate insulating film; a second gate electrode formed on the surface of the semiconductor substrate through a second gate insulating film and being adjacent to the first gate electrode through an insulating film; a charge trapping film formed at least in a trap region surrounded by the semiconductor substrate, the first gate electrode and the second gate electrode; and a tunnel insulating film formed between the charge trapping film and the second gate electrode. In one of programming and erasing, electrons are injected into the charge trapping film from the second gate electrode through the tunnel insulating film by Fowler-Nordheim tunneling.