Abstract: A terminal-equipped electric wire includes a terminal to be electrically connected to a connection target member, and an electric wire to be connected to the terminal by ultrasonic joining. The terminal includes a joint portion to be connected to the electric wire, a connection portion to be connected to the connection target member, and a plating layer on a surface of the terminal. The connection portion has an uneven shape on at least a part of a surface thereof. When the terminal-equipped electric wire is connected to the connection target member, an insulating coating of the plating layer covering at least a part of the surface of the connection portion is broken.

Abstract: A process for preparing difluorophosphate comprising reacting difluorophosphoric acid with at least one salt, as a raw material, selected from a halide salt, a carbonate, a phosphate, a hydroxide and an oxide of an alkali metal, an alkaline earth metal or an onium in the difluoraphosphoric acid, then separating a precipitate from the difluorophosphoric acid by solid-liquid separation, the precipitate being precipitated by crystallization operation in the difluorophosphoric acid, and removing the difluorophosphoric acid contained in the precipitate by distillation to obtain difluorophosphate.

Abstract: A semiconductor light emitting device includes a first conductive clad layer that is group III-V semiconductor mixed crystal, an active layer, and a second conductive clad layer. The second conductive clad layer has a laminated structure of at least three layers including a first layer, a second layer, and a third layer disposed in this order closer to the active layer. The second layer and the third layer are included in a striped ridge, and the second layer is positioned at a skirt of the ridge. The surface of the first layer is a flat part at both sides of the ridge. When Al compositions of the first layer, second layer, and third layer are X1, X2, and X3, respectively, the relation X2>X1, X3 is satisfied. When film thicknesses of the first layer, second layer, and third layer are D1, D2, and D3, the relation D2<D3 is satisfied.

Abstract: A process for preparing difluorophosphate comprising reacting difluorophosphoric acid with at least one salt, as a raw material, selected from a halide salt, a carbonate, a phosphate, a hydroxide and an oxide of an alkali metal, an alkaline earth metal or an onium in the difluoraphosphoric acid, then separating a precipitate from the difluorophosphoric acid by solid-liquid separation, the precipitate being precipitated by crystallization operation in the difluorophosphoric acid, and removing the difluorophosphoric acid contained in the precipitate by distillation to obtain difluorophosphate.

Abstract: A semiconductor light emitting device includes a first conductive clad layer that is group III-V semiconductor mixed crystal, an active layer, and a second conductive clad layer. The second conductive clad layer has a laminated structure of at least three layers including a first layer, a second layer, and a third layer disposed in this order closer to the active layer. The second layer and the third layer are included in a striped ridge, and the second layer is positioned at a skirt of the ridge. The surface of the first layer is a flat part at both sides of the ridge. When Al compositions of the first layer, second layer, and third layer are X1, X2, and X3, respectively, the relation X2>X1, X3 is satisfied. When film thicknesses of the first layer, second layer, and third layer are D1, D2, and D3, the relation D2<D3 is satisfied.

Abstract: A nitride semiconductor laser device includes a first semiconductor layer, an active layer, a second semiconductor layer having a ridge portion and a planar portion, a first electrode formed above the ridge portion, and a dielectric film formed on the side wall portion of the ridge portion. A region from a front end face to a predetermined position P is a region A. A region from the predetermined position P to the rear end face is a region B. A thickness of the part of the ridge portion exposed from the dielectric film in the region A is greater than a thickness of the part of the ridge portion exposed from the dielectric film in the region B, and the first electrode is in contact with the ridge portion at least in the region A.

Abstract: A nitride semiconductor laser diode includes a second conductive cladding layer formed on an active layer, and including a ridge portion having a raised cross-sectional shape, and flat portions located on both sides of the ridge portion; a light-absorbing layer formed on each of the flat portions, and having an optical absorption coefficient larger than the second conductive cladding layer. The light-absorbing layer includes a first region provided at a side of a light-emitting facet, and having a distance Di1 from a line-symmetric axis in a longitudinal direction of the ridge portion to a side surface of the light-absorbing layer; and a second region provided at a side opposite to the light-emitting facet, and having a distance Di2 from the line-symmetric axis to the side surface of the light-absorbing layer. A relationship between the Di1 and the Di2 is represented by Di1<Di2.

Abstract: A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value W1 of a width of the first trench in a region adjacent to the front end face, a minimum value W2 of a width of the second trench in the region adjacent to the front end face, a width W3 of the first trench at the rear end face, and a width W4 of the second trench at the rear end face satisfy Rf<Rr, W1<W3, and W2<W4. A width Wf of the ridge at the front end face, and a width Wr of the ridge at the rear end face satisfy Wf>Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

Abstract: A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 ?m?W2?60 ?m are satisfied.

Abstract: A semiconductor laser device 100 having a ridge stripe structure comprises: an n-type clad layer 105 having a protrusion; and an n-type current block layer 107 covering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front and rear cleavage planes is L, the width of the upper surface at the front cleavage plane is Wf, and the width of the upper surface at the rear cleavage is Wr. In a range where a distance from the front cleavage plane is shorter than or equal to L/2, an area Sc of the upper surface is in a range of L/8×(3Wf+Wr)<Sc?L/2×Wf, and W in an arbitrary position in the range is in a range of ½(Wf+Wr)<W?Wf.

Abstract: A nitride semiconductor laser device includes: an active layer made of a nitride formed on a semiconductor substrate; a stripe-shaped ridge waveguide including a cladding layer having a ridge structure in its upper portion, formed on the active layer; a first current blocking layer transparent to light generated from the active layer, formed at least on a side face of the ridge waveguide; a second current blocking layer having light absorbency, formed on a flat portion of the cladding layer on each side of the ridge waveguide at a position spaced from the side face of the waveguide; and a third current blocking layer formed on the first and second current blocking layers, wherein ?g>?1, ?g>?2, and ?g<?3 are satisfied where ?1, ?2, ?3, and ?g are respectively the heat expansion coefficients of the first, second, and third current blocking layers and gallium nitride.

Abstract: A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value W1 of a width of the first trench in a region adjacent to the front end face, a minimum value W2 of a width of the second trench in the region adjacent to the front end face, a width W3 of the first trench at the rear end face, and a width W4 of the second trench at the rear end face satisfy Rf<Rr, W1<W3, and W2<W4. A width Wf of the ridge at the front end face, and a width Wr of the ridge at the rear end face satisfy Wf>Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

Abstract: A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 ?m?W2?60 ?m are satisfied.

Abstract: A first and second semiconductor laser, which comprise buffer layers, cladding layers, quantum well active layers, and cladding layers integrated on the substrate and have a stripe geometry, are integrated on a common substrate, with the quantum well active layers in the vicinity of the cavity facets disordered by impurity diffusion. Relationships ?1>?b1, ?2>?b2, ?1>?2, and E1?E2 are satisfied, where ?1 and ?2 are defined, respectively, as the emission wavelengths of the active layers of the first and second semiconductor lasers, E1 and E2, respectively, as the forbidden band energies of the buffer layers of the first and second semiconductor lasers, and ?b1 and ?b2 respectively as the wavelengths corresponding to the forbidden band energies of the buffer layers of the first and second semiconductor lasers.

Abstract: A semiconductor laser device has a first light emitting portion and a second light emitting portion having a longer emission wavelength than that of the first light emitting portion. Each of the first light emitting portion and the second light emitting portion has a stripe-shaped ridge structure used for carrier injection. The ridge structure in the first light emitting portion includes a first front end region having a width Wf1 and having a length L3 from a front facet, a first rear end region having a width Wr1 and having a length L1 from a rear facet, and a first tapered region located between the first front end region and the first rear end region and having a length L2, and the relation of Wf1>Wr1 is satisfied.

Abstract: A semiconductor laser device 100 having a ridge stripe structure comprises: an n-type clad layer 105 having a protrusion; and an n-type current block layer 107 covering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front and rear cleavage planes is L, the width of the upper surface at the front cleavage plane is Wf, and the width of the upper surface at the rear cleavage is Wr. In a range where a distance from the front cleavage plane is shorter than or equal to L/2, an area Sc of the upper surface is in a range of L/8×(3Wf+Wr)<Sc?L/2×Wf, and W in an arbitrary position in the range is in a range of ½(Wf+Wr)<W?Wf.

Abstract: The semiconductor laser device includes first and second light emitting portions each including a first cladding layer, an active layer and a second cladding layer, and each having a stripe structure. The stripe structure of the first light emitting portion has a section having a width changing along a resonator direction and includes a first front end face, and relationships of Wf1?W1; W1>W2; and (Wf1?W1)/2L1<(W1?W2)/2L2 hold wherein Wf1 is a width on the first front end face; W1 is a width in a position away from the first front end face by a distance L1; and W2 is a width in a position away from said the front end face by a distance L1+L2 (whereas L1+L2?L).

Abstract: A semiconductor laser device includes a red-light-emission portion and an infrared-light-emission portion on a single substrate. The red-light-emission portion has a structure in which an AlGaInP-based active layer is sandwiched by a first cladding layer of a first conductivity type having a striped portion and a second cladding layer of a second conductivity type. The infrared-light-emission portion has a structure in which an AlGaAs-based active layer is sandwiched by a third cladding layer of the first conductivity type having a striped portion and a fourth cladding layer of the second conductivity type. The first, second, third, and fourth cladding layers are all made of an AlGaInP-based material. When in these layers, the Al:Ga contents are represented by X1:1-X1, X2:1-X2, X3:1-X3, and X4:1-X4, respectively, X1?X2 and X3?X4 are satisfied.

Abstract: The semiconductor laser device includes first and second light emitting portions each including a first cladding layer, an active layer and a second cladding layer, and each having a stripe structure. The stripe structure of the first light emitting portion has a section having a width changing along a resonator direction and includes a first front end face, and relationships of Wf1?W1; W1>W2; and (Wf1?W1)/2L1<(W1?W2)/2L2 hold wherein Wf1 is a width on the first front end face; W1 is a width in a position away from the first front end face by a distance L1; and W2 is a width in a position away from said the front end face by a distance L1+L2 (whereas L1+L2?L).